Re-transmitting packet of polling-based wireless local area network (WLAN)
    1.
    发明申请
    Re-transmitting packet of polling-based wireless local area network (WLAN) 审中-公开
    基于轮询的无线局域网(WLAN)的重​​传数据包

    公开(公告)号:US20060126497A1

    公开(公告)日:2006-06-15

    申请号:US11266491

    申请日:2005-11-04

    IPC分类号: H04J1/16 H04L12/403

    摘要: A method of re-transmitting a packet of an access point (AP) in a polling-based Wireless Local Area Network (WLAN) includes: scheduling a super frame to form a first period of providing a polling message to arbitrary stations at the AP and allowing only stations receiving the polling message to get access to a medium without contention, and to form a second period of allowing the stations to get access to the medium through contention; transmitting packets stored in a first transmission queue to the corresponding stations during the first period of the super frame; and enqueuing a packet whose transmission results in failure during a first portion of a second transmission queue to re-transmit the packet whose transmission has resulted in failure during the second period upon a determination that at least one of the packets transmitted to the stations has resulted in a failure to be transmitted.

    摘要翻译: 在基于轮询的无线局域网(WLAN)中重新传输接入点(AP)的分组的方法包括:调度超帧以形成向AP处的任意站点提供轮询消息的第一周期,以及 只允许接收到轮询消息的站访问媒体而不进行争用,并且形成允许站通过争用访问媒体的第二时段; 在超帧的第一周期期间将存储在第一传输队列中的分组发送到对应的站; 并且在第二传输队列的第一部分期间,其传输导致故障的分组进入队列,以在确定发送到所述台站的分组中的至少一个已经导致的情况下重新发送在第二周期期间其传输已经导致故障的分组 无法传送。

    Semiconductor device with MIM capacitor and method for manufacturing the same
    2.
    发明授权
    Semiconductor device with MIM capacitor and method for manufacturing the same 有权
    具有MIM电容器的半导体器件及其制造方法

    公开(公告)号:US08445991B2

    公开(公告)日:2013-05-21

    申请号:US12985812

    申请日:2011-01-06

    IPC分类号: H01L29/92

    摘要: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a lower electrode formed on a substrate, a dielectric layer including an etched dielectric region and an as-grown dielectric region formed on the lower electrode, an upper electrode formed on the as-grown dielectric region, a hardmask formed on the upper electrode, a spacer formed at a side surface of the hardmask and the upper electrode and over a surface of the etched dielectric region, and a buffer insulation layer formed on the hardmask and the spacer.

    摘要翻译: 提供半导体器件和制造半导体器件的方法。 半导体器件包括形成在基板上的下电极,包括蚀刻介电区域和形成在下电极上的生长电介质区域的电介质层,形成在生长电介质区域上的上电极,形成在其上的硬掩模 上电极,形成在硬掩模的侧表面和上电极以及蚀刻的电介质区域的表面上的隔离物,以及形成在硬掩模和间隔物上的缓冲绝缘层。

    Method of estimating location of terminal in switched-beamforming based wireless communication system
    3.
    发明申请
    Method of estimating location of terminal in switched-beamforming based wireless communication system 有权
    基于交换波束成形的无线通信系统中终端位置的方法

    公开(公告)号:US20070202880A1

    公开(公告)日:2007-08-30

    申请号:US11653199

    申请日:2007-01-12

    IPC分类号: H04Q7/20

    CPC分类号: H04W16/28 H04W64/00

    摘要: A terminal location estimation method in a wireless communication system in which an access point (AP) provides an access service to a plurality of terminals includes defining a plurality of beam spaces around the AP through space multiplexing; scheduling the beam spaces according to a predetermined pattern; simultaneously forming a beam in at least one beam space; and detecting the existence and location of a terminal according to whether a response message in response to the formed beam is received. Accordingly, an AP forms beams in a predetermined scheduling pattern, and each of the terminals detecting the beams registers its location by informing the AP that each of the terminals exists in a relevant beam area, and thus, a location of each of the terminals can be estimated without using a complex DOA algorithm.

    摘要翻译: 一种无线通信系统中的终端位置估计方法,其中接入点(AP)向多个终端提供接入服务包括通过空间多路复用来定义AP周围的多个波束空间; 根据预定模式调度光束空间; 同时在至少一个梁空间中形成梁; 以及根据是否接收到响应于所形成的波束的响应消息来检测终端的存在和位置。 因此,AP以预定的调度模式形成波束,并且通过向AP指示每个终端存在于相关的波束区域中,检测波束的每个终端登记其位置,因此每个终端的位置可以 估计不使用复杂的DOA算法。

    Semiconductor device and method for fabricating the same
    4.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08310026B2

    公开(公告)日:2012-11-13

    申请号:US12690813

    申请日:2010-01-20

    申请人: Jin-Youn Cho

    发明人: Jin-Youn Cho

    IPC分类号: H01L29/92

    摘要: A semiconductor device and a method for fabricating the same are provided. The method includes: forming a contact plug passing through an inter-layer insulation layer; sequentially forming a lower electrode layer, a dielectric layer and an upper electrode layer on the inter-layer insulation layer; patterning the upper electrode layer; patterning the dielectric layer and the lower electrode layer, thereby obtaining a capacitor including an upper electrode, a patterned dielectric layer and a lower electrode; and sequentially forming a first metal interconnection line connected with the contact plug and second metal interconnection lines connected with the capacitor.

    摘要翻译: 提供了一种半导体器件及其制造方法。 该方法包括:形成穿过层间绝缘层的接触塞; 在层间绝缘层上依次形成下电极层,电介质层和上电极层; 图案化上电极层; 对电介质层和下电极层进行构图,从而获得包括上电极,图案化电介质层和下电极的电容器; 并且顺序地形成与所述接触插塞连接的第一金属互连线和与所述电容器连接的第二金属互连线。

    CAPACITOR AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    CAPACITOR AND METHOD FOR FABRICATING THE SAME 有权
    电容器及其制造方法

    公开(公告)号:US20120171840A1

    公开(公告)日:2012-07-05

    申请号:US13415947

    申请日:2012-03-09

    IPC分类号: H01L21/02

    CPC分类号: H01L28/60 H01L28/65 H01L28/75

    摘要: A method for fabricating a capacitor is provided. The method for fabricating a capacitor includes forming a dielectric layer over a lower electrode on a substrate, forming an upper electrode over the dielectric layer, forming a hard mask over the upper electrode, etching the hard mask to form a hard mask pattern, etching the upper electrode to make the dielectric layer remain on the lower electrode in a predetermined thickness, forming an isolation layer along an upper surface of the remaining dielectric layer and the hard mask pattern, leaving the isolation layer having a shape of a spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, and etching the lower electrode to be isolated.

    摘要翻译: 提供一种制造电容器的方法。 制造电容器的方法包括在基板上的下电极上形成电介质层,在电介质层上形成上电极,在上电极上形成硬掩模,蚀刻硬掩模以形成硬掩模图案,蚀刻 使电介质层以预定的厚度保持在下电极上,沿着剩余电介质层和硬掩模图案的上表面形成隔离层,使隔离层在一个侧壁上具有间隔物的形状 硬掩模图案,上电极和电介质层,并蚀刻待分离的下电极。

    Local communication system and method in wireless communication system
    6.
    发明申请
    Local communication system and method in wireless communication system 有权
    无线通信系统中的本地通信系统和方法

    公开(公告)号:US20050003856A1

    公开(公告)日:2005-01-06

    申请号:US10858986

    申请日:2004-06-02

    CPC分类号: H04W72/121 H04W72/1268

    摘要: Local communication system in wireless communication system includes a main wireless terminal negotiating with each of the peripheral wireless terminals during a time period for which a frame will be transmitted, generating a schedule map including negotiated time information and a transmission sequence of each of the peripheral wireless terminals, and transmitting the generated schedule map to all peripheral wireless terminals; and the peripheral wireless terminals storing the schedule map received from the main wireless terminal, and performing communication with the main wireless terminal according to the sequence determined in the schedule map for the negotiated time period.

    摘要翻译: 无线通信系统中的本地通信系统包括在发送帧的时间段期间与每个外围无线终端协商的主无线终端,生成包括协商的时间信息和每个外围无线电的发送序列的时间表 终端,并将生成的日程表图发送到所有外围无线终端; 以及存储从主无线终端接收到的时间表图的外围无线终端,并且根据协调时间段的时间表图中确定的顺序与主无线终端进行通信。

    Method for transmitting a frame at a high rate in a wireless local area network
    7.
    发明授权
    Method for transmitting a frame at a high rate in a wireless local area network 失效
    一种用于在无线局域网中高速发送帧的方法

    公开(公告)号:US07489668B2

    公开(公告)日:2009-02-10

    申请号:US10898778

    申请日:2004-07-26

    IPC分类号: H04Q7/22

    摘要: A method for transmitting data at a high rate in a wireless LAN is provided. A wireless access point requests reliable node information from a wireless terminal having a transfer rate equal to or less than a predetermined transfer rate if data to be transmitted to the terminal occurs. The terminal produces a frame containing information related to reliable nodes that can communicate with the terminal and information of greatest transfer rates between the reliable nodes and the terminal, and transmits the frame to the access point. The access point selects an optimal relay node from the reliable nodes, based on the greatest transfer rates between the reliable nodes and the access point and transfer rates between the reliable nodes and the terminal, and determines if a relay gain exists when using the optimal node. If the relay gain exists, the access point performs relay transmission to the terminal; otherwise, it performs direct transmission to it.

    摘要翻译: 提供了一种在无线LAN中以高速率发送数据的方法。 如果发送到终端的数据发生,则无线接入点从具有等于或小于预定传输速率的传输速率的无线终端请求可靠节点信息。 终端产生包含与终端通信的可靠节点和可靠节点与终端之间传输速率最大的信息相关联的帧,并将帧发送到接入点。 接入点根据可靠节点与接入点之间的最大传输速率和可靠节点与终端之间的传输速率,从可靠节点中选择最佳中继节点,并确定在使用最优节点时是否存在中继增益 。 如果存在继电器增益,则接入点对终端执行中继传输; 否则,它直接传输到它。

    Semiconductor device and method for fabricating the same
    9.
    发明申请
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US20060145293A1

    公开(公告)日:2006-07-06

    申请号:US11301992

    申请日:2005-12-12

    申请人: Jin-Youn Cho

    发明人: Jin-Youn Cho

    IPC分类号: H01L29/00

    摘要: A semiconductor device and a method for fabricating the same are provided. The method includes: forming a contact plug passing through an inter-layer insulation layer; sequentially forming a lower electrode layer, a dielectric layer and an upper electrode layer on the inter-layer insulation layer; patterning the upper electrode layer; patterning the dielectric layer and the lower electrode layer, thereby obtaining a capacitor including an upper electrode, a patterned dielectric layer and a lower electrode; and sequentially forming a first metal interconnection line connected with the contact plug and second metal interconnection lines connected with the capacitor.

    摘要翻译: 提供了一种半导体器件及其制造方法。 该方法包括:形成穿过层间绝缘层的接触塞; 在层间绝缘层上依次形成下电极层,电介质层和上电极层; 图案化上电极层; 对电介质层和下电极层进行构图,从而获得包括上电极,图案化电介质层和下电极的电容器; 并且顺序地形成与所述接触插头连接的第一金属互连线和与所述电容器连接的第二金属互连线。