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    Method and apparatus for transmitting content, and method and apparatus for receiving content
    1.
    发明授权
    Method and apparatus for transmitting content, and method and apparatus for receiving content 有权
    用于发送内容的方法和装置，以及用于接收内容的方法和装置

    公开(公告)号：US08806560B2

    公开(公告)日：2014-08-12

    申请号：US12269286

    申请日：2008-11-12

    申请人： Young-soo Kang ,  Kwang-hyuk Kim

    发明人： Young-soo Kang ,  Kwang-hyuk Kim

    IPC分类号： H04N7/173 ,  H04N7/18

    CPC分类号： H04H60/72 ,  H04H20/93 ,  H04H60/74

    摘要： Provided are method and apparatus for transmitting/receiving broadcasting content. The method of transmitting broadcasting content includes generating metadata including at least one of information about an acquisition route of at least one additional content related to the broadcasting content and information about a target device to use the at least one additional content and transmitting the metadata and a broadcasting signal including the broadcasting content.

    摘要翻译： 提供了用于发送/接收广播内容的方法和装置。 发送广播内容的方法包括生成元数据，其包括关于与广播内容相关的至少一个附加内容的获取路线的信息和关于目标设备的信息中的至少一个，以使用至少一个附加内容并发送元数据和 包括广播内容的广播信号。

    Capacitor and method for fabricating the same
    2.
    发明授权
    Capacitor and method for fabricating the same 有权
    电容器及其制造方法

    公开(公告)号：US08530323B2

    公开(公告)日：2013-09-10

    申请号：US13415947

    申请日：2012-03-09

    申请人： Jin-Youn Cho ,  Young-Soo Kang ,  Jong-Il Kim ,  Sang-Geun Koo

    发明人： Jin-Youn Cho ,  Young-Soo Kang ,  Jong-Il Kim ,  Sang-Geun Koo

    IPC分类号： H01L21/02

    CPC分类号： H01L28/60 ,  H01L28/65 ,  H01L28/75

    摘要： A method for fabricating a capacitor is provided. The method for fabricating a capacitor includes forming a dielectric layer over a lower electrode on a substrate, forming an upper electrode over the dielectric layer, forming a hard mask over the upper electrode, etching the hard mask to form a hard mask pattern, etching the upper electrode to make the dielectric layer remain on the lower electrode in a predetermined thickness, forming an isolation layer along an upper surface of the remaining dielectric layer and the hard mask pattern, leaving the isolation layer having a shape of a spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, and etching the lower electrode to be isolated.

    摘要翻译： 提供一种制造电容器的方法。 制造电容器的方法包括在基板上的下电极上形成电介质层，在电介质层上形成上电极，在上电极上形成硬掩模，蚀刻硬掩模以形成硬掩膜图案，蚀刻 使电介质层以预定的厚度保持在下电极上，沿着剩余电介质层和硬掩模图案的上表面形成隔离层，使隔离层在一个侧壁上具有间隔物的形状 硬掩模图案，上电极和电介质层，并蚀刻待分离的下电极。

    Semiconductor device with MIM capacitor and method for manufacturing the same
    4.
    发明授权
    Semiconductor device with MIM capacitor and method for manufacturing the same 有权
    具有MIM电容器的半导体器件及其制造方法

    公开(公告)号：US08445991B2

    公开(公告)日：2013-05-21

    申请号：US12985812

    申请日：2011-01-06

    申请人： Jin-Youn Cho ,  Young-soo Kang ,  Sang-Geun Koo

    发明人： Jin-Youn Cho ,  Young-soo Kang ,  Sang-Geun Koo

    IPC分类号： H01L29/92

    CPC分类号： H01L28/60 ,  H01L21/31144 ,  H01L28/65 ,  H01L28/75

    摘要： A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a lower electrode formed on a substrate, a dielectric layer including an etched dielectric region and an as-grown dielectric region formed on the lower electrode, an upper electrode formed on the as-grown dielectric region, a hardmask formed on the upper electrode, a spacer formed at a side surface of the hardmask and the upper electrode and over a surface of the etched dielectric region, and a buffer insulation layer formed on the hardmask and the spacer.

    摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体器件包括形成在基板上的下电极，包括蚀刻介电区域和形成在下电极上的生长电介质区域的电介质层，形成在生长电介质区域上的上电极，形成在其上的硬掩模 上电极，形成在硬掩模的侧表面和上电极以及蚀刻的电介质区域的表面上的隔离物，以及形成在硬掩模和间隔物上的缓冲绝缘层。

    CAPACITOR AND METHOD FOR FABRICATING THE SAME
    8.
    发明申请
    CAPACITOR AND METHOD FOR FABRICATING THE SAME 有权
    电容器及其制造方法

    公开(公告)号：US20120171840A1

    公开(公告)日：2012-07-05

    申请号：US13415947

    申请日：2012-03-09

    申请人： Jin-Youn Cho ,  Young-Soo Kang ,  Jong-Il Kim ,  Sang-Geun Koo

    发明人： Jin-Youn Cho ,  Young-Soo Kang ,  Jong-Il Kim ,  Sang-Geun Koo

    IPC分类号： H01L21/02

    CPC分类号： H01L28/60 ,  H01L28/65 ,  H01L28/75

    摘要： A method for fabricating a capacitor is provided. The method for fabricating a capacitor includes forming a dielectric layer over a lower electrode on a substrate, forming an upper electrode over the dielectric layer, forming a hard mask over the upper electrode, etching the hard mask to form a hard mask pattern, etching the upper electrode to make the dielectric layer remain on the lower electrode in a predetermined thickness, forming an isolation layer along an upper surface of the remaining dielectric layer and the hard mask pattern, leaving the isolation layer having a shape of a spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, and etching the lower electrode to be isolated.

    摘要翻译： 提供一种制造电容器的方法。 制造电容器的方法包括在基板上的下电极上形成电介质层，在电介质层上形成上电极，在上电极上形成硬掩模，蚀刻硬掩模以形成硬掩模图案，蚀刻 使电介质层以预定的厚度保持在下电极上，沿着剩余电介质层和硬掩模图案的上表面形成隔离层，使隔离层在一个侧壁上具有间隔物的形状 硬掩模图案，上电极和电介质层，并蚀刻待分离的下电极。

    CAPACITOR AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    CAPACITOR AND METHOD FOR FABRICATING THE SAME 有权
    电容器及其制造方法

    公开(公告)号：US20100155889A1

    公开(公告)日：2010-06-24

    申请号：US12603124

    申请日：2009-10-21

    申请人： Jin-Youn CHO ,  Young-Soo Kang ,  Jong-Il Kim ,  Sang-Geun Koo

    发明人： Jin-Youn CHO ,  Young-Soo Kang ,  Jong-Il Kim ,  Sang-Geun Koo

    IPC分类号： H01L27/00 ,  H01L21/20

    CPC分类号： H01L28/60 ,  H01L28/65 ,  H01L28/75

    摘要： A capacitor includes a lower electrode; a dielectric layer formed on a predetermined portion of the lower electrode; an upper electrode formed on the dielectric layer; a hard mask pattern formed on the upper electrode; and an isolation layer having a shape of a spacer, formed on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer.

    摘要翻译： 电容器包括下电极; 形成在下电极的预定部分上的电介质层; 形成在电介质层上的上电极; 形成在上电极上的硬掩模图案; 以及形成在硬掩模图案的一个侧壁，上电极和电介质层上的具有隔离物形状的隔离层。

    METHOD AND APPARATUS FOR PROCESSING REQUEST FROM APPLICATION IN HOME NETWORK
    10.
    发明申请
    METHOD AND APPARATUS FOR PROCESSING REQUEST FROM APPLICATION IN HOME NETWORK 审中-公开
    用于处理家庭网络应用要求的方法和装置

    公开(公告)号：US20100118663A1

    公开(公告)日：2010-05-13

    申请号：US12613858

    申请日：2009-11-06

    申请人： Kwang-hyuk KIM ,  Gyung-pyo HONG ,  Young-soo KANG ,  Jung-shin PARK

    发明人： Kwang-hyuk KIM ,  Gyung-pyo HONG ,  Young-soo KANG ,  Jung-shin PARK

    IPC分类号： H04H60/27

    CPC分类号： H04H20/63

    摘要： A method is used by an Open Cable-Digital Media Player (OC-DMP) to process a request of an application with respect to content of an Open Cable-Digital Media Server (OC-DMS). The method includes determining validity of the request based on metadata of the content, and selectively transmitting the request to the OC-DMS based on a result of the determination.

    摘要翻译： 开放有线数字媒体播放器（OC-DMP）使用一种方法来处理关于开放有线数字媒体服务器（OC-DMS）内容的应用程序的请求。 该方法包括基于内容的元数据确定请求的有效性，并且基于确定的结果选择性地将该请求发送到OC-DMS。