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    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    3.
    发明授权
    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same 失效
    使用擦除栅极进行擦除操作的半导体存储器件及其制造方法

    公开(公告)号：US08119480B2

    公开(公告)日：2012-02-21

    申请号：US12923593

    申请日：2010-09-29

    申请人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    发明人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    IPC分类号： H01L21/336

    CPC分类号： H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

    摘要： A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

    摘要翻译： 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    4.
    发明申请
    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same 失效
    使用擦除栅极进行擦除操作的半导体存储器件及其制造方法

    公开(公告)号：US20110021014A1

    公开(公告)日：2011-01-27

    申请号：US12923593

    申请日：2010-09-29

    申请人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    发明人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    IPC分类号： H01L21/336

    CPC分类号： H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

    摘要： A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

    摘要翻译： 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

    Light emitting device using nano size needle
    5.
    发明授权
    Light emitting device using nano size needle 失效
    发光装置采用纳米尺寸针

    公开(公告)号：US08217401B2

    公开(公告)日：2012-07-10

    申请号：US12716733

    申请日：2010-03-03

    申请人： Noe-jung Park ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Young-Gu Jin

    发明人： Noe-jung Park ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Young-Gu Jin

    IPC分类号： H01L27/15 ,  H01L29/26

    CPC分类号： H01L51/5203 ,  H01L33/382 ,  H01L33/62 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.

    摘要翻译： 一种发光装置，其通过使用纳米尺寸针向发光层提供电子或空穴来提高电子或空穴的注入效率，所述纳米尺寸针包括具有第一极性的第一电极，具有与第一极性相反的第二极性的第二电极， 介于所述第一电极和所述第二电极之间以发射光的层;以及插入所述第一电极中并朝向所述发光层延伸的多个导电针。

    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    6.
    发明授权
    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same 失效
    使用擦除栅极进行擦除操作的半导体存储器件及其制造方法

    公开(公告)号：US07829937B2

    公开(公告)日：2010-11-09

    申请号：US11980351

    申请日：2007-10-31

    申请人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    发明人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    IPC分类号： H01L29/76 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

    摘要： A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

    摘要翻译： 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    7.
    发明申请
    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same 失效
    使用擦除栅极进行擦除操作的半导体存储器件及其制造方法

    公开(公告)号：US20080164510A1

    公开(公告)日：2008-07-10

    申请号：US11980351

    申请日：2007-10-31

    申请人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    发明人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

    摘要： A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

    摘要翻译： 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号：US20110128423A1

    公开(公告)日：2011-06-02

    申请号：US12944272

    申请日：2010-11-11

    申请人： Myung-Bok LEE ,  Sang-Chul Sul ,  Young-Gu Jin

    发明人： Myung-Bok LEE ,  Sang-Chul Sul ,  Young-Gu Jin

    IPC分类号： H04N5/335

    CPC分类号： H04N9/045 ,  H01L27/14621 ,  H04N5/332

    摘要： An image sensor includes a plurality of color sensors, a plurality of depth sensors, a near-infrared cut filter, a color filter, a pass filter and a rejection filter. The color sensors and depth sensors are formed on a substrate. The near-infrared cut filter and the color filter are formed on the color sensors. The pass filter is formed on the depth sensors, and is adapted to transmit light having a wavelength longer than an upper limit of a visible light wavelength. The pass filter has a multi-layer structure wherein a semiconductor material and a semiconductor oxide material are alternately stacked. The rejection filter is formed over the near-infrared cut filter, the color filter and the pass filter, and is adapted to transmit light having a wavelength shorter than an upper limit of a near-infrared light wavelength.

    摘要翻译： 图像传感器包括多个颜色传感器，多个深度传感器，近红外截止滤光器，滤色器，通过滤光器和拒绝滤光器。 颜色传感器和深度传感器形成在基板上。 近红外截止滤光器和滤色器形成在彩色传感器上。 通过滤波器形成在深度传感器上，并且适于透射波长比可见光波长的上限长的波长。 通过滤波器具有多层结构，其中半导体材料和半导体氧化物材料交替堆叠。 抑制滤波器形成在近红外截止滤波器，滤色器和通过滤波器上，并且适于透射波长短于近红外光波长的上限的光。