公开(公告)号：US11982936B2

公开(公告)日：2024-05-14

申请号：US17855630

申请日：2022-06-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang Lee ,  Ping-Hsun Lin ,  Yen-Cheng Ho ,  Chih-Cheng Lin ,  Chia-Jen Chen

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/52 ,  G03F1/54 ,  G03F1/68

CPC classification number: G03F1/24 ,  G03F1/26 ,  G03F1/52 ,  G03F1/54 ,  G03F1/68

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

公开(公告)号：US12038693B2

公开(公告)日：2024-07-16

申请号：US18197563

申请日：2023-05-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chien-Cheng Chen ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Shih-Ming Chang ,  Tran-Hui Shen ,  Yen-Cheng Ho ,  Chen-Shao Hsu

IPC: G03F7/00 ,  G03F1/36 ,  G03F1/78 ,  G03F1/76 ,  G03F7/20 ,  H01J37/317

CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F1/78 ,  G03F1/76 ,  G03F7/2002 ,  G03F7/70358 ,  G03F7/70608 ,  G03F7/70616 ,  G03F7/70716 ,  H01J37/3174 ,  H01J2237/31771

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US11687006B2

公开(公告)日：2023-06-27

申请号：US17740048

申请日：2022-05-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chien-Cheng Chen ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Shih-Ming Chang ,  Tran-Hui Shen ,  Yen-Cheng Ho ,  Chen-Shao Hsu

IPC: G03F7/00 ,  G03F1/36 ,  G03F1/78 ,  H01J37/317 ,  G03F1/76 ,  G03F7/20

CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F1/78 ,  G03F1/76 ,  G03F7/2002 ,  G03F7/70358 ,  G03F7/70608 ,  G03F7/70616 ,  G03F7/70716 ,  H01J37/3174 ,  H01J2237/31771

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.