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    Semiconductor mask blanks with a compatible stop layer
    2.
    发明授权
    Semiconductor mask blanks with a compatible stop layer 有权
    具有兼容停止层的半导体掩模板

    公开(公告)号：US09142423B2

    公开(公告)日：2015-09-22

    申请号：US14225649

    申请日：2014-03-26

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Boming Hsu ,  Tran-Hui Shen

    IPC: G03F1/26 ,  G03F1/36 ,  G03F1/22 ,  H01L21/311 ,  H01L21/31 ,  H01L21/66

    CPC classification number: H01L21/0332 ,  G03F1/26 ,  G03F1/46 ,  H01L21/0337 ,  H01L21/31 ,  H01L21/31116 ,  H01L22/26

    Abstract: Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.

    Abstract translation: 提供了一种用于创建包括停止层的掩模坯料的方法。 停止层是光学兼容的，并且与作为掩模坯料的一部分包括的其它层的工艺兼容。 这样的空白可以包括EUV，相移或OMOG掩模。 停止层包括钼，硅和氮化物，其比例允许相容性，并有助于残留气体分析仪的检测。 还提供了具有停止层的掩模坯料图案化的方法，特别是用于去除由于先前的掩模制造步骤中的问题而可能发生的半透明残留缺陷的方法。 该方法涉及用残留气体分析仪检测包含的材料。 还提供了一种掩模空白结构，其结合了相容的停止层。

    Image Mask Film Scheme and Method
    7.
    发明申请
    Image Mask Film Scheme and Method 审中-公开
    影像膜片方案及方法

    公开(公告)号：US20150370158A1

    公开(公告)日：2015-12-24

    申请号：US14841141

    申请日：2015-08-31

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Boming Hsu ,  Tran-Hui Shen

    IPC: G03F1/48 ,  G03F1/46

    CPC classification number: G03F1/74 ,  G03F1/46 ,  G03F1/48

    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.

    Abstract translation: 提供了修复光刻掩模的系统和方法。 一个实施例包括在衬底上的吸光层上形成屏蔽层。 一旦屏蔽层就位，可以使用例如电子束过程来修复吸光度层，以引发反应以修复吸光度层中的缺陷，屏蔽层用于屏蔽吸收层的其余部分 在修复过程中从不希望的蚀刻。

    Image mask film scheme and method
    8.
    发明授权
    Image mask film scheme and method 有权
    图像胶片方案和方法

    公开(公告)号：US09122175B2

    公开(公告)日：2015-09-01

    申请号：US13649850

    申请日：2012-10-11

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Boming Hsu ,  Tran-Hui Shen

    IPC: G03F1/48 ,  G03F1/74

    CPC classification number: G03F1/74 ,  G03F1/46 ,  G03F1/48

    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.

    Abstract translation: 提供了修复光刻掩模的系统和方法。 一个实施例包括在衬底上的吸光层上形成屏蔽层。 一旦屏蔽层就位，可以使用例如电子束过程来修复吸光度层，以引发反应以修复吸光度层中的缺陷，屏蔽层用于屏蔽吸收层的其余部分 在修复过程中从不希望的蚀刻。

    Semiconductor Mask Blanks with a Compatible Stop Layer
    9.
    发明申请
    Semiconductor Mask Blanks with a Compatible Stop Layer 有权
    半导体掩模空白与兼容的停止层

    公开(公告)号：US20140199787A1

    公开(公告)日：2014-07-17

    申请号：US14225649

    申请日：2014-03-26

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Boming Hsu ,  Tran-Hui Shen

    IPC: H01L21/311 ,  H01L21/66 ,  H01L21/31

    CPC classification number: H01L21/0332 ,  G03F1/26 ,  G03F1/46 ,  H01L21/0337 ,  H01L21/31 ,  H01L21/31116 ,  H01L22/26

    Abstract: Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.

    Abstract translation: 提供了一种用于创建包括停止层的掩模坯料的方法。 停止层是光学兼容的，并且与作为掩模坯料的一部分包括的其它层的工艺兼容。 这样的空白可以包括EUV，相移或OMOG掩模。 停止层包括钼，硅和氮化物，其比例允许相容性，并有助于残留气体分析仪的检测。 还提供了具有停止层的掩模坯料图案化的方法，特别是用于去除由于先前的掩模制造步骤中的问题而可能发生的半透明残留缺陷的方法。 该方法涉及用残留气体分析仪检测包含的材料。 还提供了一种掩模空白结构，其结合了相容的停止层。

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