公开(公告)号：US20240347377A1

公开(公告)日：2024-10-17

申请号：US18754653

申请日：2024-06-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Cheng ,  Pu-Fang Chen ,  Cheng-Ta Wu ,  Po-Jung Chiang ,  Ru-Liang Lee ,  Victor Y. Lu ,  Yen-Hsiu Chen ,  Yeur-Luen Tu ,  Yu-Lung Yeh ,  Shi-Chieh Lin

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L21/84

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/324 ,  H01L21/84 ,  H01L21/26506

摘要： Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) device with an impurity competing layer to absorb potential contamination metal particles during an annealing process, and the SOI structure thereof. In some embodiments, an impurity competing layer is formed on the dummy substrate. An insulation layer is formed over a support substrate. A front side of the dummy wafer is bonded to the insulation layer. An annealing process is performed and the impurity competing layer absorbs metal from an upper portion of the dummy substrate. Then, a majority portion of the dummy substrate is removed including the impurity competing layer, leaving a device layer of the dummy substrate on the insulation layer.

公开(公告)号：US11894408B2

公开(公告)日：2024-02-06

申请号：US17347001

申请日：2021-06-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ping-Yin Liu ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Xiaomeng Chen ,  Pin-Nan Tseng

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.

公开(公告)号：US20230299105A1

公开(公告)日：2023-09-21

申请号：US18324206

申请日：2023-05-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

IPC分类号： H01L27/146

CPC分类号： H01L27/14629 ,  H01L27/14607

摘要： The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a pixel region arranged between one or more trenches formed by sidewalls of the substrate. One or more dielectric materials are arranged along the sidewalls of the substrate forming the one or more trenches. A conductive material is disposed within the one or more trenches. The conductive material is electrically coupled to an interconnect disposed within a dielectric arranged on the substrate.

公开(公告)号：US11276587B2

公开(公告)日：2022-03-15

申请号：US16688608

申请日：2019-11-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Hui Huang ,  Chun-Han Tsao ,  Sheng-Chau Chen ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Xiaomeng Chen

IPC分类号： H01L21/67 ,  H01L21/18 ,  H01L21/762 ,  H01L21/683 ,  H01L21/687 ,  H01L21/66

摘要： An apparatus for and a method of bonding a first substrate and a second substrate are provided. In an embodiment a first wafer chuck has a first curved surface and a second wafer chuck has a second curved surface. A first wafer is placed on the first wafer chuck and a second wafer is placed on a second wafer chuck, such that both the first wafer and the second wafer are pre-warped prior to bonding. Once the first wafer and the second wafer have been pre-warped, the first wafer and the second wafer are bonded together.

公开(公告)号：US11211259B2

公开(公告)日：2021-12-28

申请号：US15958385

申请日：2018-04-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pu-Fang Chen ,  Shi-Chieh Lin ,  Victor Y. Lu ,  Yeur-Luen Tu

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L21/84 ,  H01L21/20 ,  H01L21/322 ,  H01L21/762

摘要： A representative method of manufacturing a silicon-on-insulator (SOI) substrate includes steps of depositing an etch stop layer on a dummy wafer, growing an epitaxial silicon layer on the etch stop layer, forming a gettering layer on the epitaxial silicon layer, bonding a buried oxide layer of a main wafer to the gettering layer, and removing the dummy wafer and etch stop layer to expose the epitaxial silicon layer. The SOI substrate has an epitaxial silicon layer adjoining the gettering layer, with the gettering layer interposed between the buried oxide layer and the epitaxial silicon layer.

公开(公告)号：US20210305131A1

公开(公告)日：2021-09-30

申请号：US17346186

申请日：2021-06-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yu-Hung Cheng ,  Shih-Pei Chou ,  Yeur-Luen Tu ,  Alexander Kalnitsky ,  Tung-I Lin ,  Wei-Li Chen

IPC分类号： H01L23/48 ,  H01L27/12 ,  H01L21/306 ,  H01L21/20 ,  H01L21/762 ,  H01L21/683 ,  H01L21/768

摘要： The present disclosure provides a semiconductor structure, including: a semiconductor device layer including a first surface and a second surface, wherein the first surface is at a front side of the semiconductor device layer, and the second surface is at a backside of the semiconductor device layer; an insulating layer above the second surface of the semiconductor device; and a through-silicon via (TSV) traversing the insulating layer. Associated manufacturing methods of the same are also provided.

公开(公告)号：US11037978B2

公开(公告)日：2021-06-15

申请号：US16658355

申请日：2019-10-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ping-Yin Liu ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Xiaomeng Chen ,  Pin-Nan Tseng

IPC分类号： H01L27/146

摘要： A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.

公开(公告)号：US10971406B2

公开(公告)日：2021-04-06

申请号：US16658597

申请日：2019-10-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Cheng ,  Ching-Wei Tsai ,  Yeur-Luen Tu ,  Tung-I Lin ,  Wei-Li Chen

IPC分类号： H01L29/267 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66

摘要： A method for fabricating a semiconductor device includes providing a first wafer comprising a substrate and a first semiconductor material layer, bonding the first wafer to a second wafer, the second wafer comprising a sacrificial layer and a second semiconductor material layer, removing the sacrificial layer, patterning the bonded wafers to create a first structure and a second structure, removing the second semiconductor material from the first structure, forming a first type of transistor in the first semiconductor material of the first structure, and forming a second type of transistor in the second semiconductor material of the second structure.

公开(公告)号：US10756222B2

公开(公告)日：2020-08-25

申请号：US16166656

申请日：2018-10-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Cheng ,  Chia-Shiung Tsai ,  Cheng-Ta Wu ,  Xiaomeng Chen ,  Yen-Chang Chu ,  Yeur-Luen Tu

IPC分类号： H01L31/103 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/109 ,  H01L27/146 ,  H01L31/105

摘要： A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

公开(公告)号：US10748948B2

公开(公告)日：2020-08-18

申请号：US15610034

申请日：2017-05-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Chang Chu ,  Yeur-Luen Tu ,  Cheng-Yuan Tsai

IPC分类号： H01L27/146

摘要： A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.