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公开(公告)号：US10739419B2
公开(公告)日：2020-08-11
申请号：US16049993
申请日：2018-07-31
Applicant: TDK Corporation
Inventor： Kunihiro Ueda , Yoshiyuki Mizoguchi , Hiroshi Yamazaki , Suguru Watanabe
Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.
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公开(公告)号：US10082406B2
公开(公告)日：2018-09-25
申请号：US15234042
申请日：2016-08-11
Applicant: TDK Corporation
Inventor： Hiroshi Naganuma , Yohei Hirota , Kunihiro Ueda
Abstract: A magnetic field detection apparatus has a first magnetic sensor and a bias magnet positioned to face the first magnetic sensor. The bias magnet has a magnetic pole surface that faces the first magnetic sensor and that applies a bias magnetic field to the first magnetic sensor. The first magnetic sensor detects magnetic field in a first direction that is parallel to the magnetic pole surface. The magnetic pole surface of the bias magnet has a plurality of grooves arranged in the first direction.
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公开(公告)号：US09810747B2
公开(公告)日：2017-11-07
申请号：US14996536
申请日：2016-01-15
Applicant: TDK Corporation
Inventor： Kunihiro Ueda , Yoshiyuki Mizoguchi , Hiroshi Yamazaki , Suguru Watanabe
CPC classification number: G01R33/09 , G01R1/00 , G01R33/0052 , G01R33/093 , H01L21/00 , H01L2221/00
Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width W1 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width W2 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element. W1>W2 (1)
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公开(公告)号：US09200884B2
公开(公告)日：2015-12-01
申请号：US14164315
申请日：2014-01-27
Applicant: TDK CORPORATION
Inventor： Kunihiro Ueda , Hiraku Hirabayashi , Satoshi Abe , Homare Tokida
Abstract: A magnetic sensor system includes a scale and a magnetic sensor arranged in a relative positional relationship variable in a first direction, and a computing unit. The magnetic sensor includes a first detection circuit, a second detection circuit and a third detection circuit that are disposed at a first position, a second position and a third position, respectively. Each of the first to third detection circuits includes a spin-valve MR element. A difference between two of the first to third positions that are the most distant from each other in a first direction falls within a one-pitch amount of change in the relative positional relationship between the scale and the magnetic sensor. The computing unit generates first and second post-computation signals having mutually different phases by computation using detection signals from the first to third detection circuits.
Abstract translation: 磁传感器系统包括在第一方向上以相对位置关系变量布置的刻度尺和磁传感器，以及计算单元。 磁传感器包括分别设置在第一位置，第二位置和第三位置的第一检测电路，第二检测电路和第三检测电路。 第一至第三检测电路中的每一个包括自旋阀MR元件。 在第一方向上彼此最远的第一至第三位置中的两个之间的差异落在刻度尺和磁性传感器之间的相对位置关系的单间距变化量中。 计算单元通过使用来自第一至第三检测电路的检测信号的计算产生具有相互不同相位的第一和第二后计算信号。
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公开(公告)号：US11340316B2
公开(公告)日：2022-05-24
申请号：US16916606
申请日：2020-06-30
Applicant: TDK Corporation
Inventor： Kunihiro Ueda , Yoshiyuki Mizoguchi , Hiroshi Yamazaki , Suguru Watanabe
Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.
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Patent Agency Ranking
公开(公告)号：US20180275204A1
公开(公告)日：2018-09-27
申请号：US15921969
申请日：2018-03-15
Applicant: TDK Corporation
Inventor： Kunihiro Ueda , Koichi Otani , Hiraku Hirabayashi , Shuhei Miyazaki
CPC classification number: G01R33/0047 , G01R33/0005 , G01R33/07 , G01R33/09 , G01R33/1276 , H01L2224/48247
Abstract: A magnetic sensor device comprises a magnetic sensor chip that has a substantially rectangular shape and that contains a magnetic sensor element; and a sealing body, which is composed of a resin material containing magnetic particles and that integrally seals the chip. The chip includes a first and second side surfaces which are mutually opposite to each other, and a third and fourth side surfaces which are mutually opposite to each other and orthogonal to the first and second side surfaces. The sealing body contains first to forth sealing parts. The thicknesses of the first and second sealing parts are smaller than the particle diameter of the particles, and the thickness of at least the third sealing part is larger than the particle diameter of the particles. The particles exist in at least the third sealing part and substantially do not exist in the first and second sealing parts.
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公开(公告)号：US09257524B2
公开(公告)日：2016-02-09
申请号：US13790398
申请日：2013-03-08
Applicant: TDK CORPORATION
Inventor： Kazuya Maekawa , Kunihiro Ueda
IPC: H01L29/66 , H01L21/02 , H01L29/861 , H01L29/12
CPC classification number: H01L29/66136 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02631 , H01L29/12 , H01L29/861
Abstract: Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k).
Abstract translation: 不同类型的半导体通过晶体生长技术形成，并且在保持高半导体层的高结晶度的同时发生快速原子层组成变化的界面处接合，从而形成异质PN结。 在单晶衬底上形成包含PN结氧化物薄膜的层状膜。 PN结氧化物薄膜由外延生长为具有由（00k）表示的c轴取向的N型半导体氧化物薄膜和P型半导体氧化物薄膜构成。
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公开(公告)号：US20230251331A1
公开(公告)日：2023-08-10
申请号：US18180369
申请日：2023-03-08
Applicant: TDK Corporation
Inventor： Kunihiro Ueda , Yoshimitsu Wada , Hiraku Hirabayashi , Kazuma Yamawaki , Tsuyoshi Umehara
CPC classification number: G01R33/0005 , G01R33/09 , G01R33/091 , G01R33/093 , G01R33/0094 , G01R33/096 , G01R33/098 , G01R33/07
Abstract: This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.
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公开(公告)号：US11630165B2
公开(公告)日：2023-04-18
申请号：US17703495
申请日：2022-03-24
Applicant: TDK CORPORATION
Inventor： Kunihiro Ueda , Yoshimitsu Wada , Hiraku Hirabayashi , Kazuma Yamawaki , Tsuyoshi Umehara
Abstract: This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.
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公开(公告)号：US10073150B2
公开(公告)日：2018-09-11
申请号：US14996468
申请日：2016-01-15
Applicant: TDK Corporation
Inventor： Kunihiro Ueda , Yoshiyuki Mizoguchi , Hiroshi Yamazaki , Suguru Watanabe
CPC classification number: G01R33/09 , G01D5/2455 , G01R33/093 , G01R33/098
Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.
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