IC PACKAGE WITH HALF-BRIDGE POWER MODULE

    公开(公告)号:US20210175165A1

    公开(公告)日:2021-06-10

    申请号:US16827455

    申请日:2020-03-23

    Abstract: An integrated circuit (IC) package includes a substrate having a first region and a second region. The substrate includes a conductive path between the first region and the second region. The IC package also includes a lead frame having a first member and a second member that are spaced apart. The IC package further includes a half-bridge power module. The half-bridge power module includes a capacitor having a first node coupled to the first member of the lead frame and a second node coupled to the second member of the lead frame. The half-bridge power module also includes a high side die having a high side field effect transistor (FET) embedded therein and a low side die having a low side FET embedded therein. A source of the high side FET is coupled to a drain of the low side FET through the conductive path of the substrate.

    SEMICONDUCTOR DEVICES AND PROCESSES

    公开(公告)号:US20230047555A1

    公开(公告)日:2023-02-16

    申请号:US17400913

    申请日:2021-08-12

    Abstract: This description relates generally to semiconductor devices and processes. A method for forming a packaged semiconductor package can include attaching a front side of a metal layer to a die pad of a leadframe that includes conductive terminals, so a periphery portion of the metal layer extends beyond a periphery pad surface of the die pad, and a portion of a half-etched cavity on the front side of the metal layer is located near the periphery pad surface of the die pad. The method further includes attaching a semiconductor device to the die pad and encapsulating the semiconductor device, the front side of the metal layer, a portion of a back side of the metal layer, and a portion of the conductive terminals to form a packaged semiconductor device.

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