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1.发明申请公开(公告)号：US20210013365A1
公开(公告)日：2021-01-14
申请号：US16978493
申请日：2019-04-01
IPC分类号： H01L33/00 , H01L21/02 , H01L33/18 , H01L33/32 , H01L29/04 , H01L29/20 , H01S5/343 , H01S5/22 , H01S5/042 , C30B25/04 , C30B29/40
摘要： A method of fabricating a semiconductor device, comprising: forming a growth restrict mask on or above a III-nitride substrate, and growing one or more island-like III-nitride semiconductor layers on the III-nitride substrate using the growth restrict mask The III-nitride substrate has an in-plane distribution of off-angle orientations with more than 0.1 degree; and the off-angle orientations of an m-plane oriented crystalline surface plane range from about +28 degrees to about −47 degrees towards a c-plane. The island-like III-nitride semiconductor layers have at least one long side and short side, wherein the long side is perpendicular to an a-axis of the island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers do not coalesce with neighboring island-like III-nitride semiconductor layers.
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2.发明申请ORAL DELIVERY OF NUCLEIC ACID-BASED GENE INTERFERING AGENTS BY SALMONELLA 有权通过SALMONELLA口服输送基于核酸的基因干扰剂公开(公告)号：US20130202557A1
公开(公告)日：2013-08-08
申请号：US13753331
申请日：2013-01-29
发明人： Hongjian Li , Hao Gong , Yong Bai , Sangwei Lu , Fenyong Liu
IPC分类号： A61K35/74
CPC分类号： C12N15/113 , A61K35/74 , A61K48/00 , C12N2310/126 , C12N2310/14 , C12N2330/50 , Y02A50/481
摘要： The present invention provides vectors, including a novel attenuated strain of Salmonella, for efficient gene transfer into an animal, e.g. a mammalian host.
摘要翻译： 本发明提供了载体，包括沙门氏菌的新的减毒菌株，用于将有效的基因转移到动物中。 哺乳动物宿主。
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公开(公告)号：US20220352409A1
公开(公告)日：2022-11-03
申请号：US17862744
申请日：2022-07-12
IPC分类号： H01L33/00 , H01L25/075 , H01S5/02 , H01S5/343
摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.
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公开(公告)号：US11508620B2
公开(公告)日：2022-11-22
申请号：US16642298
申请日：2018-09-17
摘要： A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.
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公开(公告)号：US12046695B2
公开(公告)日：2024-07-23
申请号：US16608071
申请日：2018-05-07
IPC分类号： H01L33/00 , H01L21/02 , H01L25/075 , H01S5/02 , H01S5/343
CPC分类号： H01L33/0093 , H01L25/0753 , H01L33/0075 , H01S5/0217 , H01S5/34333 , H01L21/0254 , H01L21/02647 , H01S2304/12
摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.
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公开(公告)号：US20230307579A1
公开(公告)日：2023-09-28
申请号：US18041269
申请日：2021-08-11
发明人： Panpan Li , Hongjian Li , Michael Iza , Shuji Nakamura , Steven P. DenBaars
CPC分类号： H01L33/32 , H01L33/0016 , H01L33/22 , H01L25/167 , H01L33/007 , H01L27/156
摘要： A method to fabricate micro-size III-nitride light emitting diodes (μLEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the μLEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The μLEDs are fabricated with dimensions that vary from 25 to 10,000 μm2. It was found that the InxAlyGazN insertion layer can reduce the forward voltage at 20 A/cm2 by at least 0.6 V. The tunnel junction μLEDs with an n-type and p-type InxAlyGazN insertion layer had a low forward voltage at 20 A/cm2 that was very stable. At dimensions smaller than 1600 μm2, the low forward voltage is less than 3.2 V.
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公开(公告)号：US20230005793A1
公开(公告)日：2023-01-05
申请号：US17945717
申请日：2022-09-15
摘要： A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.
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公开(公告)号：US20220352410A1
公开(公告)日：2022-11-03
申请号：US17863084
申请日：2022-07-12
IPC分类号： H01L33/00 , H01S5/02 , H01L25/075 , H01S5/343
摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.
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