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公开(公告)号：US12046695B2
公开(公告)日：2024-07-23
申请号：US16608071
申请日：2018-05-07
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Takeshi Kamikawa , Srinivas Gandrothula , Hongjian Li , Daniel A. Cohen
IPC: H01L33/00 , H01L21/02 , H01L25/075 , H01S5/02 , H01S5/343
CPC classification number: H01L33/0093 , H01L25/0753 , H01L33/0075 , H01S5/0217 , H01S5/34333 , H01L21/0254 , H01L21/02647 , H01S2304/12
Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.
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公开(公告)号：US20220352410A1
公开(公告)日：2022-11-03
申请号：US17863084
申请日：2022-07-12
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Takeshi Kamikawa , Srinivas Gandrothula , Hongjian Li , Daniel A. Cohen
IPC: H01L33/00 , H01S5/02 , H01L25/075 , H01S5/343
Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.
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Patent Agency Ranking
公开(公告)号：US09054498B2
公开(公告)日：2015-06-09
申请号：US14308445
申请日：2014-06-18
Applicant: The Regents of the University of California
Inventor： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
IPC: H01L21/00 , H01S5/30 , B82Y20/00 , H01S5/22 , H01S5/343 , H01L33/32 , H01L21/02 , H01S5/02 , H01S5/20 , H01S5/32
CPC classification number: H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
Abstract translation: 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。
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公开(公告)号：US20220239068A1
公开(公告)日：2022-07-28
申请号：US17613659
申请日：2020-05-28
Applicant: The Regents of the University of California
Inventor： Jared Kearns , Daniel A. Cohen , Joonho Back , Nathan Palmquist , Tal Margalith , Steven P. DenBaars , Shuji Nakamura
Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) configurations are disclosed. In a first example, the VCSEL includes a III-Nitride active region between a p-type III-Nitride layer and an n-type III-Nitride layer; and a curved minor on or above the p-type III-Nitride layer. The curved mirror can be formed in a III-Nitride layer or a Transparent Oxide (TO) material and enables the formation of a long VCSEL cavity that improves VCSEL lifetime, VCSEL output power, VCSEL power efficiency and VCSEL reliability. In a second example, the VCSEL has an active region with a high indium content. In a third example, the VCSEL is transparent.
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公开(公告)号：US20230006426A1
公开(公告)日：2023-01-05
申请号：US17801612
申请日：2021-02-17
Applicant: The Regents of the University of California
Inventor： Daniel A. Cohen , Daniel Myers , Claude C. A. Weisbuch , Steven P. DenBaars
Abstract: A Group-III nitride light emitting device that utilizes scattering of hot carriers generated by Auger recombination from an externally electrically-driven, relatively narrow band gap carrier generation region into a relatively wide band gap carrier recombination region, such that the relatively wide band gap carrier recombination region of the Group-III nitride light emitting device is internally electrically injected by the hot carriers generated in the externally electrically-injected relatively narrow band gap carrier generation region. The device is used for generation of incoherent light (a light-emitting diode) or coherent light (a laser diode).
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公开(公告)号：US20220352409A1
公开(公告)日：2022-11-03
申请号：US17862744
申请日：2022-07-12
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Takeshi Kamikawa , Srinivas Gandrothula , Hongjian Li , Daniel A. Cohen
IPC: H01L33/00 , H01L25/075 , H01S5/02 , H01S5/343
Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.
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公开(公告)号：US20140301419A1
公开(公告)日：2014-10-09
申请号：US14308445
申请日：2014-06-18
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
CPC classification number: H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
Abstract translation: 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。
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