公开(公告)号：US20160118224A1

公开(公告)日：2016-04-28

申请号：US14868554

申请日：2015-09-29

Applicant: Tokyo Electron Limited

Inventor： Masayuki KOHNO ,  Ryou SON ,  Naoki MATSUMOTO ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Ippei SHIMIZU ,  Yusuke YOSHIDA ,  Koji KOYAMA ,  Masami SUDAYAMA ,  Yukiyoshi ARAMAKI

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32266 ,  H01J37/32944

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract translation: 提供了一种等离子体处理装置，其被配置为将气体供应到室中，使用电磁波的功率从气体产生等离子体，并且在由安装台保持的基板上执行预定的等离子体处理。 等离子体处理装置包括电介质窗，从电磁波发生器输出的电磁波通过该介质传播并传递到室内;支撑构件，其支撑介电窗口;分隔构件，其将支撑构件的空间 从等离子体产生空间排列并且包括抵靠电介质窗口的突起，以及布置在分隔构件和电介质窗口之间的导电构件，并且被保护以通过突起而暴露于等离子体产生空间。

公开(公告)号：US20160126114A1

公开(公告)日：2016-05-05

申请号：US14883287

申请日：2015-10-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki KOHNO ,  Yusuke YOSHIDA ,  Naoki MATSUMOTO ,  Ippei SHIMIZU ,  Naoki MIHARA ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Yoshikazu AZUMAYA ,  Junsuke HOSHIYA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32495

Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract translation: 等离子体处理装置包括处理室，设置在处理室中的工作台，设置在处理室的介质窗，以及由围绕工作台和电介质窗之间的处理空间的介电材料制成的围绕体。 电介质窗和周围体在垂直方向上彼此隔开预定的间隙。

公开(公告)号：US20150129129A1

公开(公告)日：2015-05-14

申请号：US14524054

申请日：2014-10-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ippei SHIMIZU ,  Naoki MIHARA ,  Shunsuke OGATA

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32513 ,  H01J37/32743 ,  H01J37/32853

Abstract: A plasma processing apparatus includes a process chamber including a sidewall, a mounting table disposed in the process chamber, a shield member which is disposed along the inner surface of the sidewall to surround the mounting table and has an opening facing the transfer port, and a shutter configured to open/close the opening, the shutter being movable up and down. The shutter has a first portion adapted to face the opening, and a second portion adapted to face the shield member at a lower side of the shield member. The shield member has a lower portion including a contact surface facing the second portion. A contactor adapted to contact the contact surface is disposed at the second portion. The first portion of the shutter closes the opening through a gap between the first portion and the shield member. The contact surface and the contactor are formed of HASTELLOY®.

Abstract translation: 一种等离子体处理装置，包括：处理室，包括侧壁;安装台，设置在处理室中;屏蔽部件，沿着侧壁的内表面设置以围绕安装台并具有面向传送端口的开口; 快门配置为打开/关闭开口，快门可上下移动。 闸门具有适于面向开口的第一部分，以及适于在屏蔽构件的下侧面对屏蔽构件的第二部分。 屏蔽构件具有包括面向第二部分的接触表面的下部。 适于接触接触表面的接触器设置在第二部分。 快门的第一部分通过第一部分和屏蔽部件之间的间隙封闭开口。 接触表面和接触器由HASTELLOY®形成。