公开(公告)号：US20160118224A1

公开(公告)日：2016-04-28

申请号：US14868554

申请日：2015-09-29

Applicant: Tokyo Electron Limited

Inventor： Masayuki KOHNO ,  Ryou SON ,  Naoki MATSUMOTO ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Ippei SHIMIZU ,  Yusuke YOSHIDA ,  Koji KOYAMA ,  Masami SUDAYAMA ,  Yukiyoshi ARAMAKI

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32266 ,  H01J37/32944

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract translation: 提供了一种等离子体处理装置，其被配置为将气体供应到室中，使用电磁波的功率从气体产生等离子体，并且在由安装台保持的基板上执行预定的等离子体处理。 等离子体处理装置包括电介质窗，从电磁波发生器输出的电磁波通过该介质传播并传递到室内;支撑构件，其支撑介电窗口;分隔构件，其将支撑构件的空间 从等离子体产生空间排列并且包括抵靠电介质窗口的突起，以及布置在分隔构件和电介质窗口之间的导电构件，并且被保护以通过突起而暴露于等离子体产生空间。

公开(公告)号：US20150221482A1

公开(公告)日：2015-08-06

申请号：US14609554

申请日：2015-01-30

Applicant: Tokyo Electron Limited

Inventor： Yusuke YOSHIDA ,  Ryou SON ,  Takahiro SENDA ,  Masayuki KOHNO ,  Naoki MATSUMOTO

IPC: H01J37/32 ,  G01K15/00

CPC classification number: H01J37/32724 ,  G01J5/0007 ,  G01J5/0044 ,  G01J5/0875 ,  G01J2005/0048 ,  G01J2005/068 ,  H01J37/32522 ,  H01J37/32935 ,  H01J37/3299

Abstract: A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (Tmeas) according to a measurement window temperature (Tw), the function (f) being computed based on the correction target temperature (Tmeas) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (Tobj) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (Tw) corresponding to a temperature of the measurement window. The temperature measuring method further involves measuring the correction target temperature (Tmeas), measuring the measurement window temperature (Tw), and correcting the correction target temperature (Tmeas) according to the measurement window temperature (Tw) based on the obtained function (f).

Abstract translation: 提供了一种用于测量与布置在等离子体处理装置的室内的测量对象相对应的部件的温度的温度测量方法。 温度测量方法包括获得用于根据测量窗口温度（Tw）校正校正目标温度（Tmeas）的功能（f），基于与温度相对应的校正目标温度（Tmeas）计算的函数（f） 通过布置在室中的测量窗测量的测量对象，对应于不使用测量窗口测量的测量对象的温度的参考温度（Tobj）和对应于测量温度的测量窗口温度（Tw） 窗口。 温度测量方法还包括基于所获得的函数（f），根据测量窗口温度（Tw）来测量校正目标温度（Tmeas），测量测量窗口温度（Tw）和校正校正目标温度（Tmeas） 。

公开(公告)号：US20250006504A1

公开(公告)日：2025-01-02

申请号：US18343124

申请日：2023-06-28

Applicant: Tokyo Electron Limited

Inventor： Jason MARION ,  Indroneil ROY ,  Yusuke YOSHIDA ,  Yun HAN

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/762

Abstract: A method includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. The method includes forming a metal layer over the dielectric layer. The method includes forming a patterned mask over the metal layer. The method includes performing a first etching process using a first etchant to form metal patterns separated by trenches in the metal layer. The method further includes performing a second etching process using a second etchant and a passivant to extend the trenches in the dielectric layer, resulting in a passivation layer formed along sidewalls of the metal patterns.

公开(公告)号：US20160126114A1

公开(公告)日：2016-05-05

申请号：US14883287

申请日：2015-10-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki KOHNO ,  Yusuke YOSHIDA ,  Naoki MATSUMOTO ,  Ippei SHIMIZU ,  Naoki MIHARA ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Yoshikazu AZUMAYA ,  Junsuke HOSHIYA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32495

Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract translation: 等离子体处理装置包括处理室，设置在处理室中的工作台，设置在处理室的介质窗，以及由围绕工作台和电介质窗之间的处理空间的介电材料制成的围绕体。 电介质窗和周围体在垂直方向上彼此隔开预定的间隙。

公开(公告)号：US20250079184A1

公开(公告)日：2025-03-06

申请号：US18241773

申请日：2023-09-01

Applicant: Tokyo Electron Limited

Inventor： Jason MARION ,  Alexander KAISER ,  Yusuke YOSHIDA ,  Yun HAN

IPC: H01L21/3213 ,  H01L21/3205 ,  H01L21/321 ,  H01L29/40 ,  H01L29/66

Abstract: A method includes providing a semiconductor substrate and forming a fin protruding from the semiconductor substrate. The method includes forming a silicon-containing layer over the fin. The method further includes patterning the silicon-containing layer to form a gate structure over the fin, where patterning the silicon-containing layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas.