公开(公告)号：US09378940B2

公开(公告)日：2016-06-28

申请号：US13916826

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract translation: 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。

公开(公告)号：US20140251539A1

公开(公告)日：2014-09-11

申请号：US14198922

申请日：2014-03-06

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Mizuno ,  Yoichi Tokunaga ,  Hiromitsu Namba ,  Tatuhiro Ueki ,  Jun Nogami ,  Jiro Higashijima ,  Yoshifumi Amano ,  Takatoshi Miyama

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method configured to perform a processing of a substrate by a processing liquid, in which the processing liquid is supplied to a substrate which rotates to process the substrate. The substrate processing apparatus includes a substrate rotating unit that rotates the substrate, a processing liquid supply unit that supplies the processing liquid to the substrate, a collection cup disposed around the substrate to collect the processing liquid supplied to the substrate, and form an air stream that flows downward from an opening formed at a top of the collection cup through a periphery of an outside of the substrate, and a negative pressure generating unit which is provided at an inside of the collection cup and at an outside of the opening and generates a negative pressure which acts toward the outside of the substrate.

Abstract translation: 公开了一种基板处理装置和基板处理方法，其被配置为通过处理液体进行基板的处理，其中处理液体被供给到旋转以处理基板的基板。 基板处理装置包括使基板旋转的基板旋转单元，将处理液供给到基板的处理液供给单元，设置在基板周围的收集杯，收集供给到基板的处理液，形成空气流 从形成在收集杯顶部的开口向下流过基板外部的周边;以及负压产生单元，其设置在收集杯的内部并在开口的外侧，并产生 作用于衬底外部的负压。

公开(公告)号：US20130340796A1

公开(公告)日：2013-12-26

申请号：US13916826

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

IPC: H01L21/02

CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract translation: 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。

公开(公告)号：US20130284213A1

公开(公告)日：2013-10-31

申请号：US13858248

申请日：2013-04-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yosuke Hachiya ,  Norihiro Ito ,  Hisashi Kawano ,  Jun Nonaka ,  Jun Nogami

IPC: H01L21/02

CPC classification number: H01L21/02076 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/6708

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.

Abstract translation: 本公开提供了一种基板处理方法和基板处理装置。 基板处理方法包括：通过将加热的硫酸与过氧化氢混合，生成含有形成在基板表面上的抗蚀剂膜的分离效果的含有Caro酸的第一温度的SPM液体; 将SPM液体冷却至发生膜损失的还原效果的第二温度; 并将第二温度的SPM液体施加到抗蚀剂膜上，从而分离抗蚀剂膜。