公开(公告)号：US20190109012A1

公开(公告)日：2019-04-11

申请号：US15999361

申请日：2017-02-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Muneyuki IMAI ,  Akitaka SHIMIZU

IPC: H01L21/311 ,  H01L21/321

Abstract: In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized. Then, the silicon oxide layer is etched by supplying a halogen-containing gas to the substrate and sublimating a reaction product generated by reaction between the halogen-containing gas and the silicon oxide layer.

公开(公告)号：US20180061657A1

公开(公告)日：2018-03-01

申请号：US15684326

申请日：2017-08-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Muneyuki IMAI ,  Noriyuki KOBAYASHI

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/31116 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02532 ,  H01L21/31144 ,  H01L21/67017 ,  H01L21/67173 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67706 ,  H01L21/67742 ,  H01L21/76816

Abstract: There is provided a substrate processing method performed on a substrate having a recess formed in a surface thereof, a first silicon-containing film formed on a bottom surface of the recess, a second silicon-containing film formed on both sides of the recess, the method including: depositing a carbon-based deposit on the surface of the substrate; removing the first silicon-containing film by performing a COR (Chemical Oxide Removal) process in which a silicon-containing film is modified to a reaction product using a processing gas, on the substrate; and removing the deposited carbon-based deposit.

公开(公告)号：US20170243753A1

公开(公告)日：2017-08-24

申请号：US15441054

申请日：2017-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Muneyuki IMAI ,  Satoshi TODA

IPC: H01L21/3105 ,  H01L21/311 ,  H01L21/762

CPC classification number: H01L21/31056 ,  H01J37/321 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/68742 ,  H01L21/76205 ,  H01L21/76224

Abstract: There is disclosed a substrate processing method for etching a substrate on which a first and a second silicon oxide layer having different film qualities are formed side by side. The substrate processing method includes: a first etching step of supplying a halogen-containing gas that is not activated to the substrate and sublimating reaction by-products generated by reaction between the halogen-containing gas and the first and the second silicon oxide layer; and a second etching step of etching the substrate by radicals generated by activating the halogen-containing gas.