公开(公告)号：US20240021423A1

公开(公告)日：2024-01-18

申请号：US18350400

申请日：2023-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Shota ISHIBASHI ,  Toru KITADA

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/50 ,  C23C14/34

CPC classification number: H01J37/3455 ,  H01J37/32715 ,  H01J37/3429 ,  C23C14/352 ,  C23C14/505 ,  C23C14/3407 ,  H01J2237/332

Abstract: There is a film forming apparatus comprising: a first holder holding a first target formed of a first material; a second holder holding a second target formed of a second material different from the first material; and a mounting table holding a substrate, the mounting table rotatable with a central axis of the mounting table as a rotation axis, wherein a distance from the central axis of the mounting table to a center of a sputter surface of the first target is different from a distance from the central axis of the mounting table to a center of a sputter surface of the second target.

公开(公告)号：US20220098717A1

公开(公告)日：2022-03-31

申请号：US17428597

申请日：2019-09-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi IMAKITA ,  Kazunaga ONO ,  Toru KITADA ,  Keisuke SATO ,  Atsushi GOMI ,  Hiroyuki YOKOHARA ,  Hiroshi SONE

IPC: C23C14/00 ,  C23C14/50 ,  C23C14/08 ,  C23C14/56 ,  C23C14/34

Abstract: A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.

公开(公告)号：US20210407779A1

公开(公告)日：2021-12-30

申请号：US17354121

申请日：2021-06-22

Applicant: Tokyo Electron Limited

Inventor： Atsushi TAKEUCHI ,  Toru KITADA ,  Kanto NAKAMURA ,  Atsushi GOMI

IPC: H01J37/34 ,  H01L43/10 ,  H01L43/12 ,  C23C14/52 ,  C23C14/35

Abstract: A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.

公开(公告)号：US20170317273A1

公开(公告)日：2017-11-02

申请号：US15652816

申请日：2017-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toru KITADA ,  Kanto NAKAMURA ,  Atsushi GOMI ,  Shinji FURUKAWA ,  Yusuke SUZUKI

IPC: H01L43/12 ,  H01L43/08 ,  H01F41/18 ,  H01F10/32 ,  C23C14/08 ,  H01F10/16 ,  C23C14/58 ,  C23C14/34 ,  H01L43/10

CPC classification number: H01L43/12 ,  C23C14/082 ,  C23C14/165 ,  C23C14/34 ,  C23C14/568 ,  C23C14/5853 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/18 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10

Abstract: A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

公开(公告)号：US20160251746A1

公开(公告)日：2016-09-01

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Hiroshi SONE ,  Atsushi GOMI ,  Kanto NAKAMURA ,  Toru KITADA ,  Yasunobu SUZUKI ,  Yusuke SUZUKI ,  Koichi TAKATSUKI ,  Tatsuo HIRASAWA ,  Keisuke SATO ,  Chiaki YASUMURO ,  Atsushi SHIMADA

IPC: C23C14/00 ,  H01L43/08 ,  H01J37/32 ,  C23C14/16 ,  H01J37/34 ,  H01L43/12 ,  H01L43/10

CPC classification number: C23C14/0036 ,  C23C14/0063 ,  C23C14/081 ,  C23C14/165 ,  C23C14/352 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01J37/3426 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract translation: 根据一个实施例的沉积装置包括处理容器。 安装台安装在加工容器的内部，金属靶被安装在安装台的上方。 此外，头部构造成朝向安装台注入氧化气体。 该头部构造成在限定在金属靶和安装在安装台上的目标物体的安装区域之间的第一区域和与限定在金属靶和安装区域之间的空间间隔开的第二区域之间移动。

公开(公告)号：US20230175114A1

公开(公告)日：2023-06-08

申请号：US18076970

申请日：2022-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Toru KITADA

IPC: C23C14/35 ,  C23C14/54

CPC classification number: C23C14/352 ,  C23C14/54

Abstract: A sputtering apparatus includes: a processing container; a first target provided inside the processing container and formed of a first material; a second target provided inside the processing container and formed of a second material different from the first material; a stage provided inside the processing container to place a substrate thereon; a shielding plate arranged between the first target and the second target; and a controller, wherein the controller is configured to perform a process of reducing a film stress of a film formed on the shielding plate.

公开(公告)号：US20230005989A1

公开(公告)日：2023-01-05

申请号：US17854944

申请日：2022-06-30

Applicant: Tokyo Electron Limited

Inventor： Keisuke SATO ,  Toru KITADA ,  Atsushi GOMI ,  Kanto NAKAMURA

IPC: H01L27/22 ,  H01L43/02 ,  H01L21/67

Abstract: A film forming apparatus for forming a laminated structure on a substrate to form a magnetic tunnel junction element is disclosed. The film forming apparatus comprises: a plurality of processing chambers where a magnetic layer and an insulating layer are formed on the substrate; a heat treatment chamber where a magnetic field is applied to the substrate to perform heat treatment; a vacuum transfer chamber that connects the processing chambers and the heat treatment chamber; and a controller.

公开(公告)号：US20240274436A1

公开(公告)日：2024-08-15

申请号：US18565486

申请日：2022-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Toru KITADA ,  Keiichi NAGASAKA

IPC: H01L21/02 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  H01L21/67 ,  H01L29/786

CPC classification number: H01L21/02565 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/541 ,  H01L21/02658 ,  H01L21/67103 ,  H01L29/7869

Abstract: Provided are a film forming method in which oxygen defects are suppressed, and a substrate processing method. Provided is a film forming method having a step for cooling a substrate to a very-low-temperature state of 200 K or less, and a step for forming an oxide semiconductor film on the cooled substrate.

公开(公告)号：US20230175112A1

公开(公告)日：2023-06-08

申请号：US18076164

申请日：2022-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Toru KITADA

IPC: C23C14/04 ,  C23C14/14 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50

CPC classification number: C23C14/042 ,  C23C14/14 ,  C23C14/3407 ,  C23C14/351 ,  C23C14/50

Abstract: There is a method for forming a film including an alloy film containing multiple types of elements on a surface of a substrate using a film forming target made of the alloy film, comprising: (a) arranging the film forming target and a distribution improvement target; and (b) forming the film on the substrate by simultaneously or alternately sputtering the film forming target and the distribution improvement target, wherein the distribution improvement target is made of a distribution improvement film containing a non-uniform element among the multiple types of elements, and in step (b), a larger amount of the non-uniform element sputtered from the distribution improvement target is supplied to a portion where the distribution amount of the non-uniform element is small compared to a portion where the distribution amount of the non-uniform element is large when the film is formed on the substrate by the film forming target.

公开(公告)号：US20230011226A1

公开(公告)日：2023-01-12

申请号：US17853455

申请日：2022-06-29

Applicant: Tokyo Electron Limited

Inventor： Kazunaga ONO ,  Kanto NAKAMURA ,  Toru KITADA ,  Atsushi GOMI

IPC: G01B11/06 ,  G01N21/95

Abstract: There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.