公开(公告)号：US20210104385A1

公开(公告)日：2021-04-08

申请号：US17034265

申请日：2020-09-28

申请人： Tokyo Electron Limited

发明人： Ryou SON ,  Tomoyuki TAKAHASHI ,  Sinya SASAKI ,  Masaru SASAKI

IPC分类号： H01J37/32

摘要： There is provided a substrate support pedestal including: a first metallic member having a recess formed in an upper portion of the first metallic member; a second metallic member provided on the first metallic member and configured to seal the recess; a substrate support part provided on the second metallic member; and one or more thermoelectric elements disposed in the recess, wherein the recess is filled with a heat transfer medium.

公开(公告)号：US20190027344A1

公开(公告)日：2019-01-24

申请号：US16037461

申请日：2018-07-17

申请人： TOKYO ELECTRON LIMITED

发明人： Naohiko OKUNISHI ,  Nozomu NAGASHIMA ,  Tomoyuki TAKAHASHI

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H05H1/46

摘要： A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

公开(公告)号：US20150311106A1

公开(公告)日：2015-10-29

申请号：US14690802

申请日：2015-04-20

申请人： TOKYO ELECTRON LIMITED

发明人： Katsuyuki KOIZUMI ,  Dai KITAGAWA ,  Tomoyuki TAKAHASHI

IPC分类号： H01L21/683 ,  H01J37/32

CPC分类号： H01J37/32715 ,  H01J37/32697 ,  H01L21/6831

摘要： Disclosed is an electrostatic chuck including a circular placing region configured to place a processing target object thereon. The placing region includes a bottom surface and a plurality of protrusions configured to protrude from the bottom surface. Further, the plurality of protrusions is formed at a plurality of positions set at a regular interval on each of a plurality of circles set concentrically and at a regular interval around a center of the placing region. Furthermore, among the plurality of positions, a plurality of positions set on each of any two adjacent circles is set not to be positioned on the same straight line extending from the center.

摘要翻译： 公开了一种静电卡盘，其包括被配置为在其上放置加工对象物体的圆形放置区域。 放置区域包括底表面和被配置为从底表面突出的多个突起。 此外，多个突起形成在围绕放置区域的中心的同心且以规则间隔设置的多个圆圈中的每一个上以规则间隔设置的多个位置。 此外，在多个位置中，设置在任何两个相邻圆圈中的每一个上的多个位置被设置为不位于从中心延伸的同一直线上。

公开(公告)号：US20230057937A1

公开(公告)日：2023-02-23

申请号：US17981265

申请日：2022-11-04

申请人： TOKYO ELECTRON LIMITED

发明人： Naohiko OKUNISHI ,  Nozomu NAGASHIMA ,  Tomoyuki TAKAHASHI

IPC分类号： H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  C23C16/458

摘要： A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

公开(公告)号：US20220270862A1

公开(公告)日：2022-08-25

申请号：US17668429

申请日：2022-02-10

申请人： Tokyo Electron Limited

发明人： Naoto HAYASAKA ,  Tomoyuki TAKAHASHI ,  Yuki KAWADA

IPC分类号： H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

摘要： There is a substrate support for use in a plasma processing apparatus, the substrate support comprising: a base; a ceramic plate disposed on the base, the ceramic plate having a substrate supporting region and a ring supporting region surrounding the substrate supporting region; an insulating annular member disposed around the base and the ceramic plate; a fixed edge ring having an inner portion and an outer portion, the inner portion being supported on the ring supporting region, the outer portion being supported on the insulating annular member, the outer portion having a first width; a movable edge ring disposed above the outer portion of the fixed edge ring, the movable edge ring having a second width smaller than the first width; and an actuator configured to vertically move the movable edge ring with respect to the fixed edge ring.

公开(公告)号：US20160225645A1

公开(公告)日：2016-08-04

申请号：US15021326

申请日：2014-10-16

申请人： TOKYO ELECTRON LIMITED

发明人： Katsuyuki KOIZUMI ,  Shigeru SENZAKI ,  Tomoyuki TAKAHASHI ,  Dai KITAGAWA

IPC分类号： H01L21/67 ,  H01L21/683

CPC分类号： H01L21/67103 ,  F27B5/14 ,  F27B5/18 ,  F27B17/0025 ,  F27D11/02 ,  F27D2019/0037 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

摘要： There is provided a temperature control mechanism comprising: a plurality of combinations of a heater and a thyristor, wherein at least one combination of the heater and the thyristor is provided on a zone-by-zone basis, and wherein an area of an electrostatic chuck for mounting a substrate is divided into a plurality of zones; a power supply configured to supply current to heaters of the plurality of combinations respectively through the thyristors of the plurality of combinations; a pair of filters disposed at a power supply line for supplying electric power from the power supply to the heaters and configured to eliminate high frequency power applied to the power supply.

摘要翻译： 提供了一种温度控制机构，包括：加热器和晶闸管的多个组合，其中加热器和晶闸管的至少一个组合在逐区的基础上设置，并且其中静电卡盘的面积 将基板安装分成多个区域; 电源，被配置为分别通过所述多个组合的晶闸管向所述多个组合的加热器提供电流; 一对滤波器，设置在电源线处，用于从电源向加热器提供电力，并且被配置为消除施加到电源的高频功率。

公开(公告)号：US20180144945A1

公开(公告)日：2018-05-24

申请号：US15813796

申请日：2017-11-15

申请人： TOKYO ELECTRON LIMITED

发明人： Tomoyuki TAKAHASHI ,  Daisuke HAYASHI ,  Dai KITAGAWA

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32192 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32678 ,  H01J37/32816 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67063 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

摘要： The present disclosure relates to a placing unit including: a base to which a high-frequency power is applied; an electrostatic chuck provided on the base and including a placing region configured to place a workpiece and an outer peripheral region configured to surround the placing region; a heater provided in the placing region; a wiring layer connected to the heater and extending to an inside of the outer peripheral region; a power supply terminal connected to a contact portion of the wiring layer in the outer peripheral region; and a conductive layer formed in the outer peripheral region or in other regions along a thickness direction of the outer peripheral region so as to overlap with the power supply terminal when viewed from thickness direction of the outer peripheral region.