公开(公告)号：US20160071707A1

公开(公告)日：2016-03-10

申请号：US14842821

申请日：2015-09-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji FURUKAWA ,  Hiroyuki TOSHIMA ,  Tooru KITADA ,  Kanto NAKAMURA ,  Kazunaga ONO

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3488 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32733

Abstract: A processing apparatus includes a processing chamber, a rotatable mounting table, a cooling mechanism and a driving mechanism. A sputtering target is provided in the processing chamber. The rotatable mounting table is provided in the processing chamber and configured to mount thereon an object to be processed. The cooling mechanism is configured to cool the mounting table. The driving mechanism is configured to change a relative position of the mounting table with respect to the cooling mechanism. The driving mechanism changes a conductivity of heat from the mounting table to the cooling mechanism at least by switching a first state in which the mounting table and the cooling mechanism are separated from each other and a second state in which the mounting table and the cooling mechanism become close to each other.

Abstract translation: 处理装置包括处理室，可旋转安装台，冷却机构和驱动机构。 在处理室中设置溅射靶。 可旋转安装台设置在处理室中并且构造成在其上安装待处理物体。 冷却机构被配置为冷却安装台。 驱动机构被配置为改变安装台相对于冷却机构的相对位置。 至少通过将安装台和冷却机构分离的第一状态切换到安装台和冷却机构的第二状态，驱动机构将热量从安装台改变为冷却机构 互相靠近。

公开(公告)号：US20160032446A1

公开(公告)日：2016-02-04

申请号：US14810239

申请日：2015-07-27

Applicant: Tokyo Electron Limited

Inventor： Atsushi GOMI ,  Kanto NAKAMURA ,  Tooru KITADA ,  Yasunobu SUZUKI ,  Shinji FURUKAWA

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/0063 ,  C23C14/081 ,  C23C14/3464 ,  C23C14/3492 ,  C23C14/541 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/3405

Abstract: A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.

Abstract translation: 用于在物体上形成金属氧化物膜的成膜装置包括保持单元和加热单元。 保持单元包括第一加热器并将物体保持在处理室中。 第一加热器电源向第一加热器供电。 目标电极与设置在保持单元上方的金属靶电连接。 溅射电源电连接到目标电极。 导入机构向保持单元供给氧气。 加热单元包括用于加热物体的第二加热器和用于在设置在保持单元上方的第一空间中的区域和与第一空间分离的第二空间中的区域之间移动第二加热器的移动机构。 第二加热器电源向第二加热器供电。

公开(公告)号：US20150075971A1

公开(公告)日：2015-03-19

申请号：US14490410

申请日：2014-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji FURUKAWA ,  Naoki WATANABE ,  Hiroshi MIKI ,  Tooru KITADA ,  Yasuhiko KOJIMA

IPC: H01J37/34 ,  C23C14/34

CPC classification number: C23C14/3464 ,  C23C14/08 ,  C23C14/3485 ,  H01J37/3417 ,  H01J37/3444 ,  H01J37/3464 ,  H01J37/347

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract translation: 绝缘膜沉积的系统和方法。 溅射沉积室包括由相同绝缘材料制成的一对靶。 每个目标同时施加高频功率信号。 相位调整单元用于将提供给该对目标的高频功率信号之间的相位差调整为规定值，从而提高所得到的膜的面内厚度分布。 预定值是目标材料特定的。