-
公开(公告)号：US20210407779A1
公开(公告)日：2021-12-30
申请号：US17354121
申请日：2021-06-22
Applicant: Tokyo Electron Limited
Inventor： Atsushi TAKEUCHI , Toru KITADA , Kanto NAKAMURA , Atsushi GOMI
Abstract: A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.
-
公开(公告)号：US20220108880A1
公开(公告)日：2022-04-07
申请号：US17490574
申请日：2021-09-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tetsuya MIYASHITA , Kanto NAKAMURA , Yusuke KIKUCHI
Abstract: A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.
-
公开(公告)号：US20230005989A1
公开(公告)日：2023-01-05
申请号：US17854944
申请日：2022-06-30
Applicant: Tokyo Electron Limited
Inventor： Keisuke SATO , Toru KITADA , Atsushi GOMI , Kanto NAKAMURA
Abstract: A film forming apparatus for forming a laminated structure on a substrate to form a magnetic tunnel junction element is disclosed. The film forming apparatus comprises: a plurality of processing chambers where a magnetic layer and an insulating layer are formed on the substrate; a heat treatment chamber where a magnetic field is applied to the substrate to perform heat treatment; a vacuum transfer chamber that connects the processing chambers and the heat treatment chamber; and a controller.
-
公开(公告)号：US20200232090A1
公开(公告)日：2020-07-23
申请号：US16488217
申请日：2018-02-21
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroki MAEHARA , Naoki WATANABE , Toru ISHII , Kanto NAKAMURA , Makoto SAITO , David HURLEY , Ian COLGAN
IPC: C23C14/54 , H01L21/683 , H01L21/67 , H01L21/677 , H01L43/12 , C23C14/56 , C23C14/50 , C23C14/52
Abstract: A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.
-
公开(公告)号：US20160032446A1
公开(公告)日：2016-02-04
申请号：US14810239
申请日：2015-07-27
Applicant: Tokyo Electron Limited
Inventor： Atsushi GOMI , Kanto NAKAMURA , Tooru KITADA , Yasunobu SUZUKI , Shinji FURUKAWA
CPC classification number: C23C14/0063 , C23C14/081 , C23C14/3464 , C23C14/3492 , C23C14/541 , H01J37/3244 , H01J37/32724 , H01J37/3405
Abstract: A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.
Abstract translation: 用于在物体上形成金属氧化物膜的成膜装置包括保持单元和加热单元。 保持单元包括第一加热器并将物体保持在处理室中。 第一加热器电源向第一加热器供电。 目标电极与设置在保持单元上方的金属靶电连接。 溅射电源电连接到目标电极。 导入机构向保持单元供给氧气。 加热单元包括用于加热物体的第二加热器和用于在设置在保持单元上方的第一空间中的区域和与第一空间分离的第二空间中的区域之间移动第二加热器的移动机构。 第二加热器电源向第二加热器供电。
-
Patent Agency Ranking
6.发明申请公开(公告)号：US20230011226A1
公开(公告)日：2023-01-12
申请号：US17853455
申请日：2022-06-29
Applicant: Tokyo Electron Limited
Inventor： Kazunaga ONO , Kanto NAKAMURA , Toru KITADA , Atsushi GOMI
Abstract: There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.
-
公开(公告)号：US20220341028A1
公开(公告)日：2022-10-27
申请号：US17659018
申请日：2022-04-13
Applicant: Tokyo Electron Limited
Inventor： Kanto NAKAMURA , Hiroyuki YOKOHARA , Yuki MOTOMURA
Abstract: A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.
-
公开(公告)号：US20150114835A1
公开(公告)日：2015-04-30
申请号：US14525096
申请日：2014-10-27
Applicant: Tokyo Electron Limited
Inventor： Atsushi GOMI , Shinji FURUKAWA , Kanto NAKAMURA , Kazunaga ONO
IPC: H01J37/34
CPC classification number: H01J37/3423 , H01J37/3417 , H01J37/3447
Abstract: A film forming apparatus includes a stage provided in the processing chamber; three or more targets uniformly arranged along a circle centering around a vertical axis line that passes through a center of the stage, each of the targets having a substantially rectangular shape; a shutter provided between the targets and the stage, the shutter including an opening which allows one of the targets to be selectively exposed to the stage; and a rotation shaft coupled to the shutter, the rotation shaft extending along the vertical axis line. A width of the opening in a tangent direction to the circle centering around the vertical axis line is set such that two adjacent targets in a circumferential direction of the circle among the targets are allowed to be partially and simultaneously exposed to the stage.
Abstract translation: 一种成膜装置，包括：设置在处理室中的台; 沿着穿过台的中心的垂直轴线周围的圆均匀排列的三个或更多个目标，每个目标具有基本上矩形的形状; 设置在所述目标和所述台之间的快门，所述快门包括允许所述目标之一选择性地暴露于所述台的开口; 以及联接到所述活门的旋转轴，所述旋转轴沿着所述垂直轴线延伸。 以围绕垂直轴线为中心的圆的切线方向的开口的宽度设定为使得目标之间的圆周方向上的两个相邻目标被部分地同时暴露于台。
-
9.发明公开公开(公告)号：US20230371391A1
公开(公告)日：2023-11-16
申请号：US18026084
申请日：2021-09-10
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kanto NAKAMURA
CPC classification number: H10N50/01 , H10B61/00 , H10N50/20 , H10N50/85 , C23C14/14 , C23C14/34 , C23C14/5853
Abstract: There is provided a method of manufacturing a magnetoresistive element. The method comprises: (a) placing a substrate on a substrate support of an oxidation processing apparatus, the substrate having a ferromagnetic layer and a magnesium layer provided on the ferromagnetic layer; and (b) oxidizing the magnesium layer by supplying oxygen gas to the substrate in a state where a temperature of the substrate support is set to 150 Kelvin or less to form a magnesium oxide layer from the magnesium layer.
-
公开(公告)号：US20180366641A1
公开(公告)日：2018-12-20
申请号：US16008659
申请日：2018-06-14
Applicant: Tokyo Electron Limited
Inventor： Hiroki MAEHARA , Naoki WATANABE , Kanto NAKAMURA
Abstract: A method for manufacturing a magnetoresistive element, includes: a first step of preparing a wafer including a first ferromagnetic layer and a first oxide layer provided directly on the first ferromagnetic layer; a second step of forming, after the first step, a second ferromagnetic layer directly on the first oxide layer; a third step of forming, after the second step, an absorbing layer directly on the second ferromagnetic layer; and a fourth step of crystallizing, after the third step, the second ferromagnetic layer by heat treatment. The second ferromagnetic layer contains boron, and the absorbing layer contains a material for absorbing boron from the second ferromagnetic layer by the heat treatment in the fourth step.
-
-
-
-
-
-
-
-
-
Search Results
13
records
(took 0.012 seconds)
