公开(公告)号：US20210249235A1

公开(公告)日：2021-08-12

申请号：US17148963

申请日：2021-01-14

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Toshiyuki NAKATSUBO ,  Takeshi KOBAYASHI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458

Abstract: A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.

公开(公告)号：US20150332895A1

公开(公告)日：2015-11-19

申请号：US14709656

申请日：2015-05-12

Applicant: Tokyo Electron Limited

Inventor： Shigehiro MIURA ,  Hitoshi KATO ,  Jun SATO ,  Toshiyuki NAKATSUBO ,  Hiroyuki KIKUCHI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32449 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/507 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/68764

Abstract: A plasma processing method is provided. In the method, a distribution of an amount of processing within a surface of a substrate by a plasma process performed on a film deposited on the substrate is obtained. Next, a flow speed of the plasma processing gas is adjusted by increasing the flow speed of the plasma processing gas supplied to a first area where the amount of processing is expected to be increased or by decreasing the flow speed of the plasma processing gas supplied to a second area where the amount of processing is expected to be decreased. Then, the plasma process is performed on the film deposited on the substrate by supplying the plasma processing gas having the adjusted flow speed into the predetermined plasma process area.

Abstract translation: 提供等离子体处理方法。 在该方法中，通过对沉积在基板上的膜进行等离子体处理，获得在基板的表面内的处理量的分布。 接下来，通过增加供给到期望增加处理量的第一区域的等离子体处理气体的流速或通过降低供给到等离子体处理气体的等离子体处理气体的流速来调节等离子体处理气体的流速 预计处理量减少的第二区域。 然后，通过将具有调节的流速的等离子体处理气体供给到预定的等离子体处理区域中，对沉积在基板上的膜进行等离子体处理。

公开(公告)号：US20220223463A1

公开(公告)日：2022-07-14

申请号：US17644412

申请日：2021-12-15

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Toshiyuki NAKATSUBO

IPC: H01L21/687 ,  H01J37/32 ,  C23C16/458 ,  C23C16/44

Abstract: A deposition apparatus includes a processing chamber, and a susceptor provided in the processing chamber. The susceptor has a recess on a surface of the susceptor. The recess includes a support and a groove, the support supports a region that includes a center of a substrate and that does not include an edge of the substrate, the groove is located around the support, and the groove is recessed relative to the support. The deposition apparatus further includes a process gas supply configured to supply a process gas to the surface of the susceptor and a purge gas supply configured to supply a purge gas to the groove.

公开(公告)号：US20190186004A1

公开(公告)日：2019-06-20

申请号：US16225788

申请日：2018-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO ,  Takeshi KOBAYASHI ,  Toshiyuki NAKATSUBO

IPC: C23C16/458 ,  C23C14/54 ,  C23C16/455 ,  H01L21/687 ,  H01L21/683

CPC classification number: C23C16/4584 ,  C23C14/541 ,  C23C16/45544 ,  C23C16/45578 ,  H01L21/6838 ,  H01L21/68792

Abstract: A film formation apparatus includes a rotary table provided in a processing container; a mounting table mounting a substrate and revolved by rotation of the rotary table; a film formation gas supply part configured to supply a film formation gas to a region through which the mounting table passes by the rotation of the rotary table; a spinning shaft rotatably provided on a portion rotating together with the rotary table; a driven gear provided on the spinning shaft; a driving gear configured to rotate while facing a revolution orbit of the driven gear and provided along an entire circumference of the revolution orbit so as to constitute a magnetic gear mechanism with the driven gear, and a relative-distance-changing mechanism configured to change a relative distance between the revolution orbit of the driven gear and the driving gear.