公开(公告)号：US20190259438A1

公开(公告)日：2019-08-22

申请号：US16400048

申请日：2019-05-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16 ,  G11C7/10

Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a scurrent level of the second pulse is different from a current level of the first pulse.

公开(公告)号：US20180075895A1

公开(公告)日：2018-03-15

申请号：US15456031

申请日：2017-03-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C7/1096 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673

Abstract: According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.