公开(公告)号：US10541250B2

公开(公告)日：2020-01-21

申请号：US15195482

申请日：2016-06-28

Applicant: Toshiba Memory Corporation

Inventor： Ryohei Kitao ,  Atsuko Sakata ,  Takeshi Ishizaki ,  Satoshi Wakatsuki ,  Shinichi Nakao ,  Shunsuke Ochiai ,  Kei Watanabe

IPC: H01L27/00 ,  H01L27/11582 ,  H01L29/66

Abstract: A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

公开(公告)号：US10153164B2

公开(公告)日：2018-12-11

申请号：US15661252

申请日：2017-07-27

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinichi Nakao ,  Shunsuke Ochiai ,  Yusuke Oshiki ,  Kei Watanabe ,  Mitsuhiro Omura

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3065 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115 ,  H01L27/1157 ,  H01L27/11582

Abstract: A method for manufacturing a semiconductor device includes forming a mask layer including a) one metal from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium, b) boron, and c) carbon on a layer to be etched. The mask layer is patterned. A hole or a groove is formed in the layer to be etched by performing dry etching on the layer to be etched using the patterned mask layer. The mask layer includes a first region and a second region. The first region includes boron and the second region includes boron such that a density of boron in the second region is different from a density of boron in the first region, or the first region includes carbon and the second region includes carbon such that a density of carbon in the second region is different from a density of carbon in the first region.

公开(公告)号：US09754793B2

公开(公告)日：2017-09-05

申请号：US15376336

申请日：2016-12-12

Applicant: Toshiba Memory Corporation

Inventor： Shinichi Nakao ,  Shunsuke Ochiai ,  Yusuke Oshiki ,  Kei Watanabe ,  Mitsuhiro Omura ,  Kosuke Horibe ,  Atsuko Sakata ,  Junichi Wada ,  Soichi Yamazaki ,  Masayuki Kitamura ,  Yuya Matsubara

IPC: H01L21/336 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/11582

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H01L27/11582 ,  H01L28/00

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.