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公开(公告)号：US20170033195A1
公开(公告)日：2017-02-02
申请号：US15300848
申请日：2015-02-25
发明人： Toru ONISHI , Shuhei OKI , Tomoharu IKEDA , Rahman MD. TASBIR
IPC分类号： H01L29/66 , H01L21/28 , H01L29/739 , H01L21/225 , H01L29/10 , H01L29/423
CPC分类号： H01L29/66348 , H01L21/2253 , H01L21/28035 , H01L21/28114 , H01L29/1095 , H01L29/1608 , H01L29/4236 , H01L29/42376 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes an emitter region, a top body region, a barrier region, a bottom body region, a drift region, a collector region, a trench, a gate insulating film, and a gate electrode. A front surface of the gate electrode is provided at a deeper position than a front surface of the semiconductor substrate. Within the gate electrode, a front surface of a first portion at a widthwise center of a trench is provided at a shallower position than a front surface of a second portion in contact with the gate insulating film.
摘要翻译： 这里公开的技术可以通过在蚀刻后通过离子注入形成扩散层到半导体衬底来抑制在制造每个半导体器件时制造的半导体器件之间的性能变化。 半导体器件包括半导体衬底。 半导体衬底包括发射区，顶体区，势垒区，底体区，漂移区，集电极区，沟槽，栅极绝缘膜和栅电极。 栅电极的前表面设置在比半导体衬底的前表面更深的位置处。 在栅电极内，在与栅极绝缘膜接触的第二部分的前表面较浅的位置设置沟槽宽度方向中心的第一部分的前表面。
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公开(公告)号：US20180138170A1
公开(公告)日：2018-05-17
申请号：US15718749
申请日：2017-09-28
IPC分类号： H01L27/07 , H01L29/32 , H01L29/08 , H01L21/268 , H01L21/265 , H01L21/8249
CPC分类号： H01L27/0716 , H01L21/26513 , H01L21/268 , H01L21/8249 , H01L27/0727 , H01L29/08 , H01L29/32 , H01L29/7397 , H01L29/8611
摘要： A method of manufacturing a semiconductor device includes: implanting charged particles into a first range and a second range in a semiconductor substrate from at least one of a first surface of the semiconductor substrate and a second surface of the semiconductor substrate located on an opposite side of the first surface so as to increase crystal defect densities in the first range and the second range; implanting n-type impurities into the first range from the first surface so as to make a region amorphous, the region being in the first range and disposed at the first surface; irradiating the first surface with first laser after the implantation of the charged particles and the implantation of the n-type impurities so as to heat the first range and the second range; and crystallizing the region which has been made amorphous in or after the irradiation of the first laser.
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公开(公告)号：US20170170005A1
公开(公告)日：2017-06-15
申请号：US15372181
申请日：2016-12-07
发明人： Satoru KAMEYAMA , Masaki AJIOKA , Shuhei OKI
IPC分类号： H01L21/02 , H01L29/66 , H01L29/34 , H01L21/285
CPC分类号： H01L21/02068 , H01L21/0209 , H01L21/28556 , H01L29/0834 , H01L29/1095 , H01L29/34 , H01L29/417 , H01L29/66325 , H01L29/66348 , H01L29/7397
摘要： A method of manufacturing a semiconductor device includes a semiconductor region forming process, a cleaning process, a surface roughness uniformizing process, and an electrode forming process. As the semiconductor region forming process, semiconductor regions are formed such that a plurality of semiconductor regions with different ion injection amounts are exposed on one principal surface of a semiconductor substrate. As the cleaning process, after the semiconductor region forming process, a cleaning using hydrofluoric acid is performed on the one principal surface of the semiconductor substrate. As the surface roughness uniformizing process, after the cleaning process, the surface roughness of the one principal surface of the semiconductor substrate is uniformized. As the electrode forming process, after the surface roughness uniformizing process, electrodes are formed on the one principal surface of the semiconductor substrate.
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