公开(公告)号：US20180138170A1

公开(公告)日：2018-05-17

申请号：US15718749

申请日：2017-09-28

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Hiroshi HOSOKAWA ,  Shinya IWASAKI ,  Tsuyoshi NISHIWAKI ,  Atsushi IMAI ,  Shuhei OKI

IPC分类号： H01L27/07 ,  H01L29/32 ,  H01L29/08 ,  H01L21/268 ,  H01L21/265 ,  H01L21/8249

CPC分类号： H01L27/0716 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/8249 ,  H01L27/0727 ,  H01L29/08 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/8611

摘要： A method of manufacturing a semiconductor device includes: implanting charged particles into a first range and a second range in a semiconductor substrate from at least one of a first surface of the semiconductor substrate and a second surface of the semiconductor substrate located on an opposite side of the first surface so as to increase crystal defect densities in the first range and the second range; implanting n-type impurities into the first range from the first surface so as to make a region amorphous, the region being in the first range and disposed at the first surface; irradiating the first surface with first laser after the implantation of the charged particles and the implantation of the n-type impurities so as to heat the first range and the second range; and crystallizing the region which has been made amorphous in or after the irradiation of the first laser.

公开(公告)号：US20150097275A1

公开(公告)日：2015-04-09

申请号：US14500179

申请日：2014-09-29

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Atsushi IMAI ,  Yoshiaki KOMINAMI ,  Takashi USHIJIMA

IPC分类号： H01L29/06 ,  H01L21/288 ,  H01L21/283 ,  H01L29/41

CPC分类号： H01L29/0657 ,  H01L21/283 ,  H01L21/288 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/92 ,  H01L29/41 ,  H01L2224/02126 ,  H01L2224/0331 ,  H01L2224/03312 ,  H01L2224/03418 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/036 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05011 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05564 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83801 ,  H01L2224/9221 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012

摘要： A semiconductor device includes a substrate, a substrate-side electrode layer, an intermediate electrode layer, and a front-side electrode layer. The substrate includes a semiconductor layer and a projection portion, the projection portion being formed on a surface of the semiconductor layer. The substrate-side electrode layer is provided on the projection portion. The intermediate electrode layer extends from on a part of the substrate-side electrode layer, which part of the substrate-side electrode layer is located on the projection portion, to just above a region of the substrate in which region the projection portion is not provided. The front-side electrode layer is provided on a surface of the intermediate electrode layer. A Young's modulus E1 of the substrate-side electrode layer, a Young's modulus E2 of the intermediate electrode layer, and a Young's modulus E3 of the front-side electrode layer satisfy a relationship of E3>E1>E2.

摘要翻译： 半导体器件包括衬底，衬底侧电极层，中间电极层和正面电极层。 基板包括半导体层和突出部分，突出部分形成在半导体层的表面上。 基板侧电极层设置在突起部上。 中间电极层从基板侧电极层的基板侧电极层的位于突出部的一部分的一部分延伸到基板的不在突出部未设置的区域的正上方 。 前侧电极层设置在中间电极层的表面上。 基板侧电极层的杨氏模量E1，中间电极层的杨氏模量E2和前侧电极层的杨氏模量E3满足E3> E1> E2的关系。

公开(公告)号：US20150061122A1

公开(公告)日：2015-03-05

申请号：US14469056

申请日：2014-08-26

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Takashi USHIJIMA ,  Atsushi IMAI ,  Jiro NOHARA

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03332 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03472 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/10145 ,  H01L2224/11472 ,  H01L2224/131 ,  H01L2224/16013 ,  H01L2224/16054 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16111 ,  H01L2224/16227 ,  H01L2224/81801 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/37001 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： A manufacturing method of a semiconductor device includes placing a mask having an opening on an external region of a top face of a substrate to locate an end portion of the opening of the mask just above a concave portion formed on the top face of the substrate, the external region being located outside the concave portion. The manufacturing method further includes: growing a conductive film on part of the top face of the substrate through the mask after the mask is placed on the substrate, the part of the top face containing the concave portion; and removing the mask from the substrate after the conductive film is grown.

摘要翻译： 半导体器件的制造方法包括将具有开口的掩模放置在基板的顶面的外部区域上，以将掩模的开口的端部恰好位于形成在基板的顶面上的凹部的正上方， 所述外部区域位于所述凹部的外侧。 该制造方法还包括：在将掩模放置在基板上之后，通过掩模在基板的顶面的一部分上生长导电膜，上表面的一部分包含凹部; 并且在导电膜生长之后从衬底去除掩模。