-
公开(公告)号：US20140021483A1
公开(公告)日：2014-01-23
申请号：US14038881
申请日：2013-09-27
发明人： Jung-Tang Chu , Ching-Hua Chiu , Hung-Wen Huang , Yea-Chen Lee , Hsing-Kuo Hsia
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/30 , H01L33/325
摘要： A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.
摘要翻译： 种子层，用于生长嵌入在载体基底上的电介质材料中的基团111-V半导体结构1s。 在组111-V半导体结构生长之后，通过湿蚀刻去除电介质材料以分离载体衬底。 组111-V半导体结构包括至少100微米的厚氮化镓层或发光结构。
-
公开(公告)号：US09065015B2
公开(公告)日：2015-06-23
申请号：US14038881
申请日：2013-09-27
发明人： Jung-Tang Chu , Ching-Hua Chiu , Hung-Wen Huang , Yea-Chen Lee , Hsing-Kuo Hsia
CPC分类号： H01L33/32 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/30 , H01L33/325
摘要： A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.
摘要翻译： 一种器件包括：衬底; 设置在所述基板上的III-V族半导体层; 以及设置在III-V族半导体层上的籽晶层。 基板是印刷电路板。 III-V族半导体层包括多量子阱（MQW）层，p型掺杂层和n型掺杂层。 种子层包括多个微型元件。 微型元件各自含有适于外延生长III-V族III族半导体层的单晶材料。 微型元件共同覆盖III-V族III族半导体层的表面的100％以下。
-
搜索结果
2 条记录 (耗时 0.012 秒)
