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公开(公告)号：US08993447B2
公开(公告)日：2015-03-31
申请号：US13858785
申请日：2013-04-08
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Hsing-Kuo Hsia , Chih-Kuang Yu , Hung-Yi Kuo , Chyi Shyuan Chern
IPC: H01L21/311 , H01L33/64
CPC classification number: H01L33/64 , H01L25/075 , H01L33/54 , H01L33/58 , H01L33/641 , H01L33/642 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014
Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.
Abstract translation: 一种装置包括其中具有多个开口的晶片。 对于每个开口，LED器件以这样的方式耦合到导电载体和晶片，使得每个耦合的LED器件和导电载体的一部分至少部分地填充开口。 制造LED器件的方法包括在晶片中形成多个开口。 该方法还包括将发光二极管（LED）器件耦合到导电载体上。 具有导电载体的LED装置至少部分地填充每个开口。
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公开(公告)号：US20140235053A1
公开(公告)日：2014-08-21
申请号：US14267303
申请日：2014-05-01
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chyi Shyuan Chern , Hsin-Hsien Wu , Chun-Lin Chang , Hsing-Kuo Hsia , Hung-Yi Kuo
IPC: H01L21/768
CPC classification number: H01L21/76801 , H01L21/02057 , H01L21/3065 , H01L21/76898
Abstract: A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.
Abstract translation: 形成贯通硅通孔（TSV）开口的方法包括通过基板形成TSV开口。 使用第一种化学物质去除在TSV开口的侧壁上的衬底的材料的重铸。 TSV开口的侧壁通过基本上除去第一种化学物质的残留物而用第二种化学品清洗。
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公开(公告)号：US09117968B2
公开(公告)日：2015-08-25
申请号：US13834055
申请日：2013-03-15
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Hsing-Kuo Hsia , Ching-Hua Chiu
CPC classification number: H01L33/20 , H01L33/007 , H01L33/0079
Abstract: A light-emitting diode structure includes an AuSn or AuIn-containing bonding layer over a substrate, a metal layer disposed over the bonding layer, a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer, a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer, a multiple quantum well structure disposed between the n-GaN and p-GaN layers, and a conductive contact disposed on the n-GaN layer. The n-GaN layer includes a rough surface with randomly distributed dips. The nano-sized dips have diameters distributed between about 100 nm and about 600 nm, have a dip density ranging from about 107 grains/cm2 to about 109 grains/cm2, and are spaced from each other with an average spacing S, average diameter D, and a ratio S/D that ranges between about 1.1 and about 1.5. The conductive contact is disposed on some of the nano-sized dips of the rough surface.
Abstract translation: 发光二极管结构包括在衬底上的AuSn或含AuIn的结合层，设置在所述接合层上的金属层，设置在所述金属层上的p型掺杂的氮化镓（p-GaN）层， 掺杂氮化镓（n-GaN）层近似于p-GaN层，设置在n-GaN和p-GaN层之间的多量子阱结构和设置在n-GaN层上的导电接触。 n-GaN层包括具有随机分布的凹陷的粗糙表面。 纳米尺寸浸渍剂的直径分布在约100nm至约600nm之间，浸渍密度范围为约107粒/ cm 2至约109粒/ cm 2，并且以平均间隔S，平均直径D ，S / D的范围为约1.1至约1.5。 导电触点设置在粗糙表面的一些纳米尺寸的凹部上。
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4.发明申请PRE-CUTTING A BACK SIDE OF A SILICON SUBSTRATE FOR GROWING BETTER III-V GROUP COMPOUND LAYER ON A FRONT SIDE OF THE SUBSTRATE 审中-公开预先切割用于在基板的正面上生长更好的III-V族化合物层的硅基板的背面公开(公告)号：US20150171266A1
公开(公告)日：2015-06-18
申请号：US14630714
申请日：2015-02-25
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Zhen-Yu Li , Chung-Pao Lin , Hsing-Kuo Hsia , Hao-Chung Kuo , Cindy Huichun Shu , Hsin-Chieh Huang
IPC: H01L33/00 , H01L29/66 , H01L21/02 , H01L33/12 , H01L21/268 , H01L21/306 , H01S5/343 , H01S5/02 , H01L29/205 , H01L29/20
CPC classification number: H01L33/0075 , B82Y20/00 , H01L21/02035 , H01L21/02458 , H01L21/0254 , H01L21/268 , H01L21/30604 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L33/0025 , H01L33/0066 , H01L33/12 , H01L33/20 , H01S5/0207 , H01S5/021 , H01S5/0218 , H01S5/34333
Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).
Abstract translation: 本公开涉及一种装置。 该装置包括具有前侧与前侧相对的后侧的基板。 基板包括从基板的背面形成的多个开口。 这些开口从平面图中共同地在基板的背面上限定图案。 在一些实施例中，衬底是硅衬底或碳化硅衬底。 与开口垂直对准的硅衬底的部分具有约100微米至约300微米的垂直尺寸。 在硅衬底的正面上形成III-V族化合物层。 III-V族化合物层是发光二极管（LED），激光二极管（LD）和高电子迁移率晶体管（HEMT）之一的组分。
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公开(公告)号：US20150093844A1
公开(公告)日：2015-04-02
申请号：US14566782
申请日：2014-12-11
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Hsing-Kuo Hsia , Chih-Kuang Yu , Gordon Kuo
CPC classification number: H01L33/0079 , H01L21/0272 , H01L21/0331 , H01L33/0066 , H01L33/0095 , H01L33/32 , H01L33/38 , H01L33/60 , H01L51/0016 , H01L2933/0016 , H01L2933/0058
Abstract: Provided is a method of fabricating a light-emitting diode (LED) device. A wafer is provided. The wafer has a sapphire substrate and a semiconductor layer formed on the sapphire substrate. The semiconductor layer contains a plurality of un-separated LED dies. A photo-sensitive layer is formed over the semiconductor layer. A photolithography process is performed to pattern the photo-sensitive layer into a plurality of patterned portions. The patterned portions are separated by a plurality of openings that are each substantially aligned with one of the LED dies. A metal material is formed in each of the openings. The wafer is radiated in a localized manner such that only portions of the wafer that are substantially aligned with the openings are radiated. The sapphire substrate is removed along with un-radiated portions of the semiconductor layer, thereby separating the plurality of LED dies into individual LED dies.
Abstract translation: 提供一种制造发光二极管（LED）装置的方法。 提供晶片。 晶片具有形成在蓝宝石衬底上的蓝宝石衬底和半导体层。 半导体层包含多个未分离的LED管芯。 在半导体层上形成光敏层。 执行光刻工艺以将感光层图案化成多个图案部分。 图案化部分由多个开口分开，每个开口基本上与LED管芯中的一个对准。 在每个开口中形成金属材料。 以局部方式照射晶片，使得只有基本上与开口对准的晶片的部分被辐射。 蓝宝石衬底与半导体层的未辐射部分一起被去除，从而将多个LED管芯分离成单独的LED管芯。
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Patent Agency Ranking
公开(公告)号：US20140021483A1
公开(公告)日：2014-01-23
申请号：US14038881
申请日：2013-09-27
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Jung-Tang Chu , Ching-Hua Chiu , Hung-Wen Huang , Yea-Chen Lee , Hsing-Kuo Hsia
IPC: H01L33/32
CPC classification number: H01L33/32 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/30 , H01L33/325
Abstract: A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.
Abstract translation: 种子层，用于生长嵌入在载体基底上的电介质材料中的基团111-V半导体结构1s。 在组111-V半导体结构生长之后，通过湿蚀刻去除电介质材料以分离载体衬底。 组111-V半导体结构包括至少100微米的厚氮化镓层或发光结构。
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公开(公告)号：US09065015B2
公开(公告)日：2015-06-23
申请号：US14038881
申请日：2013-09-27
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Jung-Tang Chu , Ching-Hua Chiu , Hung-Wen Huang , Yea-Chen Lee , Hsing-Kuo Hsia
CPC classification number: H01L33/32 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/30 , H01L33/325
Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.
Abstract translation: 一种器件包括：衬底; 设置在所述基板上的III-V族半导体层; 以及设置在III-V族半导体层上的籽晶层。 基板是印刷电路板。 III-V族半导体层包括多量子阱（MQW）层，p型掺杂层和n型掺杂层。 种子层包括多个微型元件。 微型元件各自含有适于外延生长III-V族III族半导体层的单晶材料。 微型元件共同覆盖III-V族III族半导体层的表面的100％以下。
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公开(公告)号：US20150108424A1
公开(公告)日：2015-04-23
申请号：US14057053
申请日：2013-10-18
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Hung-Wen Huang , Hsing-Kuo Hsia , Ching-Hua Chiu
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/12 , H01L33/38
Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.
Abstract translation: 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。
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公开(公告)号：US09449954B2
公开(公告)日：2016-09-20
申请号：US13955353
申请日：2013-07-31
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chih-Chia Lin , Hsing-Kuo Hsia , Ching-Hui Chen , Jacob C. Tarn
CPC classification number: H01L25/167 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H05K1/181 , H05K2201/10106 , H05K2201/10545 , H05K2203/1316 , H05K2203/1327 , Y02P70/611 , H01L2924/00014
Abstract: The present disclosure involves a method of packaging light-emitting diodes (LEDs). A carrier having a first side and a second opposite the first side is provided. The carrier includes a plurality of conductive interconnect elements. An integrated circuit (IC) die is bonded to the first side of the carrier. A packaging material having light-reflective properties is molded over the first and second sides of the carrier such that the IC die is sealed by the packaging material. A portion of the packaging material is molded into a reflective cap structure. A light-emitting diode (LED) is bonded to the second side of the carrier. Sidewalls of the reflective cap structure circumferentially surround the LED. The LED and the IC die are electrically coupled together through the conductive interconnect elements in the carrier. A lens is then formed over the LED.
Abstract translation: 本公开涉及封装发光二极管（LED）的方法。 提供具有第一侧和与第一侧相对的第二侧的载体。 载体包括多个导电互连元件。 集成电路（IC）管芯结合到载体的第一侧。 具有光反射特性的包装材料被模制在载体的第一和第二侧上，使IC芯片被包装材料密封。 包装材料的一部分被模制成反射盖结构。 发光二极管（LED）结合到载体的第二侧。 反射盖结构的侧壁周向地围绕LED。 LED和IC管芯通过载体中的导电互连元件电耦合在一起。 然后在LED上形成透镜。
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公开(公告)号：US09224636B2
公开(公告)日：2015-12-29
申请号：US14267303
申请日：2014-05-01
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chyi Shyuan Chern , Hsin-Hsien Wu , Chun-Lin Chang , Hsing-Kuo Hsia , Hung-Yi Kuo
IPC: H01L21/768 , H01L21/02 , H01L21/3065
CPC classification number: H01L21/76801 , H01L21/02057 , H01L21/3065 , H01L21/76898
Abstract: A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical.
Abstract translation: 一种方法包括在基板中形成开口，并且开口完全延伸穿过基板。 在由开口暴露的衬底的侧壁上形成重铸材料。 在开口中施加第一种化学品以去除重铸材料，其中在施加第一种化学品之后，第一种化学物质的残留物残留在侧壁的部分上。 此外，在开口中施加第二种化学物质以除去第一化学品的残余物，而第二种化学品与第一种化学品不同。
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