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    SOI SUBSTRATE AND SEMICONDUCTOR DEVICE USING AN SOI SUBSTRATE
    1.
    发明申请
    SOI SUBSTRATE AND SEMICONDUCTOR DEVICE USING AN SOI SUBSTRATE 审中-公开
    SOI衬底和使用SOI衬底的半导体器件

    公开(公告)号：US20100193900A1

    公开(公告)日：2010-08-05

    申请号：US12667623

    申请日：2008-02-25

    申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Makoto Yoshimi

    发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Makoto Yoshimi

    IPC分类号： H01L27/12 ,  H01L21/762

    CPC分类号： H01L21/76254 ,  H01L27/1203

    摘要： A base is formed of a material, such as SiC, having mechanical characteristics higher than those of silicon for forming a semiconductor layer, and the base and the semiconductor layer are bonded through an insulating layer. After bonding, an SOI substrate is formed by mechanically separating the semiconductor layer from the base, and the separated semiconductor layer is reused for forming the subsequent SOI substrate. Thus, a large SOI substrate having a diameter of 400 mm or more, which has been difficult to obtain by conventional methods, can be obtained.

    摘要翻译： 基体由诸如SiC的材料形成，具有比用于形成半导体层的硅的机械特性更高的机械特性，并且基底和半导体层通过绝缘层接合。 在接合之后，通过将半导体层与基底机械分离来形成SOI衬底，并且将分离的半导体层重新用于形成随后的SOI衬底。 因此，可以获得通过常规方法难以获得的直径为400mm以上的大型SOI衬底。

    Silicon carbide product, method for producing same, and method for cleaning silicon carbide product
    4.
    发明申请
    Silicon carbide product, method for producing same, and method for cleaning silicon carbide product 审中-公开
    碳化硅产品，其制造方法和清洁碳化硅产品的方法

    公开(公告)号：US20060234058A1

    公开(公告)日：2006-10-19

    申请号：US10566099

    申请日：2004-07-07

    申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano

    发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano

    IPC分类号： C03C23/00 ,  C23G1/00

    CPC分类号： H01L21/02378 ,  C30B29/36 ,  H01L21/02052 ,  H01L21/3148 ,  H01L29/1608 ,  Y10T428/31

    摘要： A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1×1011 (atoms/cm2). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities.

    摘要翻译： 公开了一种碳化硅产品，其特征在于具有不大于1×10 11（原子/ cm 2）的金属杂质浓度的表面。 还公开了制造这种碳化硅产品的方法和清洁碳化硅产品的方法。 通过用氢氟酸，盐酸或含有硫酸和过氧化氢溶液的水溶液进行清洗，可以得到具有高度清洁表面的碳化硅。 本发明提供了高度清洁的碳化硅，因此能够制造出不考虑由杂质引起的特性劣化的半导体器件。 此外，当碳化硅用于半导体生产等的单元中时，具有能够防止在该单元中加工的物体遭受飞散杂质的不利影响的优点。

    METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR
    7.
    发明申请
    METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR 有权
    生产半导体晶体管的方法

    公开(公告)号：US20130052816A1

    公开(公告)日：2013-02-28

    申请号：US13582239

    申请日：2011-03-02

    申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

    发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

    摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

    摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

    Semiconductor device and method of manufacturing the same
    8.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08183670B2

    公开(公告)日：2012-05-22

    申请号：US11651034

    申请日：2007-01-09

    申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

    发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

    IPC分类号： H01L29/04

    CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

    摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

    摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。