利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.025 秒)

    Method for treating exhaust gas and apparatus for treating exhaust gas
    4.
    发明申请
    Method for treating exhaust gas and apparatus for treating exhaust gas 审中-公开
    废气处理方法及废气处理装置

    公开(公告)号：US20070160512A1

    公开(公告)日：2007-07-12

    申请号：US10587266

    申请日：2005-01-25

    申请人： Tadahiro Ohmi ,  Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

    发明人： Tadahiro Ohmi ,  Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

    IPC分类号： B01D53/68 ,  B01J19/08 ,  B01J19/12

    CPC分类号： B01J19/088 ,  B01J2219/0883 ,  B01J2219/0892 ,  B01J2219/0894

    摘要： In the exhaust gas treatment method of the present invention, exhaust gas in an excited state in semiconductor device production equipment is introduced into a plasma treatment unit of a treatment unit under reduced pressure, introduced into a reactor of a reaction removal unit while maintained in an excited state by plasma generated in the plasma treatment unit, and is reacted with a reaction remover composed of particulate calcium oxide filled into the reactor to remove harmful gas components in the exhaust gas. Exhaust gas may also be reacted with the reaction remover after having degraded the harmful gas components by oxidative degradation in the presence of plasma by supplying oxygen to the plasma treatment unit.

    摘要翻译： 在本发明的排气处理方法中，将半导体装置制造装置中的处于激发状态的废气在减压下导入处理装置的等离子体处理装置，同时将其导入反应除去装置的反应器，同时保持在 在等离子体处理单元中产生的等离子体产生激发态，并与填充到反应器中的颗粒状氧化钙组成的反应去除剂反应，以除去废气中的有害气体成分。 在通过向等离子体处理单元供给氧之后，在等离子体存在下，通过氧化降解而使有害气体成分降解后，废气也可与反应去除剂反应。

    Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses
    5.
    发明授权
    Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses 有权
    吹扫CVD装置的方法以及用于判断半导体制造装置的维护时间的方法

    公开(公告)号：US06887721B2

    公开(公告)日：2005-05-03

    申请号：US10021259

    申请日：2001-12-19

    申请人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

    发明人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

    IPC分类号： H01L21/00 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  H01L21/66

    CPC分类号： C23C16/4408 ,  C23C16/4401 ,  C23C16/52

    摘要： The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.

    摘要翻译： 本发明公开了一种CVD装置，其能够在维护后能够有效地进行清洗处理，在维护后的加热流动清洗处理中，使用具有高导热性的气体和惰性气体的混合气体进行吹扫，以进行启动 的CVD装置，同时减少清洗处理所需的时间。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外，为了判断在反应室中进行腐蚀性气体处理的半导体制造装置的合适的维护时间，在进行腐蚀性气体处理时，在与反应室连接的水分计测量反应室中的水分浓度，并进行维护时间 根据重复进行腐蚀性气体处理时的水分浓度的变化来确定半导体制造装置。 此外，为了在加工过程中测量腐蚀性气体的湿度，同时防止水分监测装置和配备的半导体制造装置中的管道的阻塞，配备有管道的水分监测装置，其一端连接到 腐蚀性气体流入的反应室和与该管的另一端连接的湿度计，其测量从反应室引入的腐蚀性气体中含有的水分，至少配备有加热管道的管道加热机构。

    Exhaust gas treatment agent, exhaust gas treatment method and exhaust gas treatment device
    6.
    发明申请
    Exhaust gas treatment agent, exhaust gas treatment method and exhaust gas treatment device 审中-公开
    废气处理剂，废气处理方法和废气处理装置

    公开(公告)号：US20070154372A1

    公开(公告)日：2007-07-05

    申请号：US10586960

    申请日：2005-01-25

    申请人： Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

    发明人： Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

    IPC分类号： B01D53/68

    CPC分类号： B01D53/68 ,  B01J20/041 ,  B01J20/28059 ,  B01J2220/42

    摘要： The exhaust gas treatment agent of the present invention is an exhaust gas treatment agent provided with a particulate and porous structure, and composed of calcium hydroxide occupying at least a portion of the surface thereof, and calcium oxide occupying the remainder. The specific surface area if preferably 1 m2/g or more, and the void fraction is preferably 10 to 50% by volume. This calcium oxide is obtained by baking particulate calcium carbonate, and exhaust gas discharged from a semiconductor production device is removed of harmful gas components by allowing the exhaust gas to contact and react with this exhaust gas treatment agent while in the gaseous state.

    摘要翻译： 本发明的废气处理剂是具有颗粒状和多孔结构的排气处理剂，由占其表面的至少一部分的氢氧化钙构成，其余部分为氧化钙。 比表面积优选为1m 2 / g以上，空隙率优选为10〜50体积％。 该氧化钙是通过焙烧碳酸钙颗粒而获得的，并且通过使废气在气态下与该废气处理剂接触并反应从而从半导体制造装置排出的废气除去有害气体成分。

    Laser spectroscopy system
    7.
    发明授权
    Laser spectroscopy system 失效
    激光光谱系统

    公开(公告)号：US06483589B1

    公开(公告)日：2002-11-19

    申请号：US09611260

    申请日：2000-07-06

    申请人： Katsumasa Suzuki ,  Hiroshi Masusaki ,  Takayuki Satoh

    发明人： Katsumasa Suzuki ,  Hiroshi Masusaki ,  Takayuki Satoh

    IPC分类号： G01N2131

    CPC分类号： G01N21/3504 ,  G01N21/39 ,  G01N2021/399

    摘要： In order to provide a laser spectroscopy system of simple construction and free of the effect of the fringe noise and to provide a laser spectroscopy system in which a reference cell is efficiently installed with minimum cost and space, there is disclosed a laser spectroscopy system comprising: a tunable laser diode source for generating a laser beam used for spectroscopic analysis; a sample cell where a sample gas is introduced; a first photo detector for measuring an intensity of a laser beam transmitted through the sample cell and having a beam receiving face; a beam splitter for splitting a portion of the laser beam from the laser source; and a second photo detector for measuring an intensity of a splitted laser beam from the beam splitter and having a beam receiving face, wherein the at least one of beam receiving faces is tilted to be at a predetermined angle from an axis of laser beam.

    摘要翻译： 为了提供一种结构简单且不受边缘噪声影响的激光光谱系统，并且提供一种激光光谱系统，其包括以下步骤：激光光谱系统，该系统包括： 用于产生用于光谱分析的激光束的可调激光二极管源; 导入样品气体的样品池; 第一光电检测器，用于测量透射通过样品池并具有光束接收面的激光束的强度; 分束器，用于分离来自激光源的激光束的一部分; 以及第二光电检测器，用于测量来自分束器的分裂激光束的强度并具有光束接收面，其中所述光束接收面中的至少一个倾斜到与激光束轴成预定角度。

    EXHAUST GAS TREATMENT SYSTEM
    8.
    发明申请
    EXHAUST GAS TREATMENT SYSTEM 审中-公开
    排气处理系统

    公开(公告)号：US20090047187A1

    公开(公告)日：2009-02-19

    申请号：US12162092

    申请日：2007-01-16

    申请人： Katsumasa Suzuki ,  Masaya Yamawaki ,  Takayuki Sato

    发明人： Katsumasa Suzuki ,  Masaya Yamawaki ,  Takayuki Sato

    IPC分类号： B01D53/68 ,  G05B21/00

    CPC分类号： B01D53/46 ,  B01D53/323 ,  B01D53/346 ,  B01D2258/0216 ,  B01D2259/818

    摘要： An exhaust gas treatment system, which comprises: an arithmetic processing part wherein the type of gas, the flow rate and the supply time of a gas supplied to a gas-using facility are inputted as parameters, and the type of gas, the flow rate and the supply time of an additive gas is calculated based on these parameters; an additive gas supply part, which supplies an additive gas while controlling the type of gas, the flow rate and the supply time of the additive gas in accordance with indication signals sent from the arithmetic processing part; and a removal part wherein the additive gas is added to an exhaust gas exhausted from the gas-using facility, and a target compound included in the exhaust gas is removed by reacting the additive gas and the target compound included in the exhaust gas.

    摘要翻译： 一种废气处理系统，包括：运算处理部，其输入供给到气体使用设备的气体的气体类型，流量和供给时间作为参数，并且气体的种类，流量 并根据这些参数计算添加气体的供给时间; 添加气体供给部，其根据从运算处理部发送的指示信号，控制添加气体的种类，流量和供给时间，供给添加气体; 以及将添加气体添加到从气体使用设备排出的排气中的除去部，通过使添加气体和废气中包含的目标化合物反应来除去废气中包含的目标化合物。

    CVD apparatus equipped with moisture monitoring
    9.
    发明授权
    CVD apparatus equipped with moisture monitoring 有权
    CVD装置，其清洗方法，用于判断半导体制造装置的维护时间的方法，水分监测装置和配备有其的半导体制造装置

    公开(公告)号：US06491758B1

    公开(公告)日：2002-12-10

    申请号：US09651255

    申请日：2000-08-30

    申请人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

    发明人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

    IPC分类号： C23C1600

    CPC分类号： C23C16/4408 ,  C23C16/4401 ,  C23C16/52

    摘要： A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas while preventing obstruction of piping in a moisture monitoring apparatus, a moisture monitoring apparatus, including a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is equipped with a pipe beating mechanism.

    摘要翻译： CVD装置能够通过对清洗气体使用高导热性和惰性气体的混合气体而进行清洗处理。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外，为了判断合适的维护时间，在进行腐蚀性气体处理时，用与反应室连接的水分计测定反应室中的水分浓度，并且根据腐蚀性气体中的水分浓度的变化来确定维护时间 治疗重复进行。 此外，为了在防止水分监测装置中的管道阻塞的同时测量腐蚀性气体的水分，包括管道的水分监测装置，其一端连接到腐蚀性气体流入的反应室中，并且水分 连接到测量从反应室引入的腐蚀性气体中的水分的另一端的仪表配备有管道打浆机构。

    Spectroscopic method for analyzing isotopes by using a semiconductor laser
    10.
    发明授权
    Spectroscopic method for analyzing isotopes by using a semiconductor laser 失效
    通过半导体激光分析同位素的光谱法

    公开(公告)号：US06800855B1

    公开(公告)日：2004-10-05

    申请号：US09472585

    申请日：1999-12-27

    申请人： Jie Dong ,  Katsumasa Suzuki ,  Hiroshi Masusaki ,  Koh Matsumoto

    发明人： Jie Dong ,  Katsumasa Suzuki ,  Hiroshi Masusaki ,  Koh Matsumoto

    IPC分类号： G01J502

    CPC分类号： G01N21/39 ,  G01N21/3504

    摘要： The present invention provides a spectroscopic method for analyzing isotopes which makes it possible to simplify a system for measurement and to identify isotopes with high accuracy and sensitivity and to carry out quantitative analysis. The spectroscopic method for analyzing isotopes uses a semiconductor laser beam having as a wavelength zone a 2000 nm-wavelength band as a beam source of wavelengths of the absorption spectra of the isotopes. A reference gas is used for identification of the isotopes where the gas contains collating components having two wavelengths (W1, W2) of well-known absorption spectra in wavelength bands close to the wavelengths (w1, w2) of the absorption spectra of the isotopes.

    摘要翻译： 本发明提供了一种用于分析同位素的光谱方法，其使得可以简化测量系统并且以高精度和灵敏度鉴定同位素并进行定量分析。 用于分析同位素的分光方法使用具有2000nm波长带的波长区域的半导体激光束作为同位素吸收光谱的波长的光源。 参考气体用于鉴定同位素，其中气体包含具有接近于同位素吸收光谱的波长（w1，w2）的波长带的众所周知的吸收光谱的两个波长（W1，W2）的对照组分。