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    Substrate processing apparatus and manufacturing method of semiconductor device
    1.
    发明申请
    Substrate processing apparatus and manufacturing method of semiconductor device 有权
    基板加工装置及半导体装置的制造方法

    公开(公告)号：US20100317199A1

    公开(公告)日：2010-12-16

    申请号：US12801444

    申请日：2010-06-09

    申请人： Tadashi Horie ,  Akito Hirano ,  Tadashi Terasaki

    发明人： Tadashi Horie ,  Akito Hirano ,  Tadashi Terasaki

    IPC分类号： H01L21/46

    CPC分类号： C23C16/34 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/2001 ,  H01L21/76856 ,  H01L21/76862 ,  H01L28/60

    摘要： To reduce a residual amount of chlorine atoms and oxygen atoms in a metal nitride film, and improve oxidation resistance of the metal nitride, film, in a temperature range of not deteriorating the characteristics of other film adjacent to the metal nitride film. A substrate processing apparatus is provided, comprising: a processing chamber into which a substrate is loaded, having thereon a substrate containing oxygen atoms, chlorine atoms, and metal atoms; a substrate support part for supporting and heating the substrate in the processing chamber; a gas supply part for supplying nitrogen atoms-containing gas and hydrogen atoms-containing gas into the processing chamber; a gas exhaust part for exhausting inside of the processing chamber; a plasma generation part for exciting the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber; and a control part for controlling the substrate support part, the gas supply part, and the plasma generation part.

    摘要翻译： 为了减少金属氮化物膜中的氯原子和氧原子的残留量，并且在不会使与金属氮化物膜相邻的其它膜的特性不劣化的温度范围内提高金属氮化物膜的抗氧化性。 提供了一种基板处理装置，包括：处理室，其上装载有基板，其上具有含有氧原子，氯原子和金属原子的基板; 用于在处理室中支撑和加热衬底的衬底支撑部分; 用于向所述处理室供给含氮原子的气体和含氢原子的气体的气体供给部; 用于排出处理室内部的排气部分; 用于激发含氮原子的气体和供给到处理室中的含氢原子气体的等离子体产生部件; 以及用于控制基板支撑部分，气体供应部分和等离子体产生部分的控制部分。

    Substrate processing apparatus and manufacturing method of semiconductor device using plasma generation
    2.
    发明授权
    Substrate processing apparatus and manufacturing method of semiconductor device using plasma generation 有权
    基板处理装置及使用等离子体发生的半导体装置的制造方法

    公开(公告)号：US08178445B2

    公开(公告)日：2012-05-15

    申请号：US12801444

    申请日：2010-06-09

    申请人： Tadashi Horie ,  Akito Hirano ,  Tadashi Terasaki

    发明人： Tadashi Horie ,  Akito Hirano ,  Tadashi Terasaki

    IPC分类号： H01L21/31

    CPC分类号： C23C16/34 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/2001 ,  H01L21/76856 ,  H01L21/76862 ,  H01L28/60

    摘要： A manufacturing method for a semiconductor device, that loads a substrate on which a film containing oxygen atoms, chlorine atoms, and metal atoms is formed into a processing chamber so as to be supported by a substrate support part. The substrate is heated by the substrate support part. The inside of the processing chamber is exhausted by a gas exhaust part while supplying nitrogen atoms-containing gas and hydorgen atoms-containing gas into the processing chamber by a gas supply part. A plasma generation part is then used to excite the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber.

    摘要翻译： 一种半导体器件的制造方法，其将形成有含有氧原子，氯原子和金属原子的膜的衬底加载到处理室中以由衬底支撑部支撑。 衬底被衬底支撑部分加热。 处理室的内部由排气部排出，同时通过气体供给部将含氮原子的气体和含有氢原子的气体供给到处理室。 然后使用等离子体产生部件来激发供给到处理室中的含氮原子的气体和含氢原子的气体。

    Producing method of semiconductor device
    4.
    发明授权
    Producing method of semiconductor device 有权
    半导体器件的生产方法

    公开(公告)号：US07795156B2

    公开(公告)日：2010-09-14

    申请号：US11664287

    申请日：2005-10-31

    申请人： Tadashi Terasaki ,  Akito Hirano ,  Masanori Nakayama ,  Unryu Ogawa

    发明人： Tadashi Terasaki ,  Akito Hirano ,  Masanori Nakayama ,  Unryu Ogawa

    IPC分类号： H01L21/469

    CPC分类号： H01L21/28273 ,  H01J37/32678 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662

    摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

    摘要翻译： 公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜 氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，该气体包括具有其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理 通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氧氮化硅膜的第二氮化步骤， 热氮化。

    Substrate Processing Method and Substrate Processing Apparatus
    5.
    发明申请
    Substrate Processing Method and Substrate Processing Apparatus 有权
    基板加工方法及基板加工装置

    公开(公告)号：US20080138994A1

    公开(公告)日：2008-06-12

    申请号：US11886529

    申请日：2006-03-14

    申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

    发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

    摘要： A starting substrate can be appropriately oxidized, while oxidation of the starting substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a starting substrate to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the starting substrate to form a plasma discharge, and processing the starting substrate by the hydrogen plasma.

    摘要翻译： 可以适当地氧化起始衬底，同时抑制起始衬底的氧化。 本发明包括通过使氢（H 2/2）气体和氧（O 2 2 N）的混合气体或供给到 起始衬底以形成等离子体放电，并通过混合等离子体处理起始衬底; 以及通过使供给到起始衬底的氢（H 2/2 N）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理起始衬底。

    Producing Method of Semiconductor Device
    8.
    发明申请
    Producing Method of Semiconductor Device 有权
    半导体器件的生产方法

    公开(公告)号：US20070298622A1

    公开(公告)日：2007-12-27

    申请号：US11664287

    申请日：2005-10-31

    申请人： Tadashi Terasaki ,  Akito Hirano ,  Masanori Nakayama ,  Unryu Ogawa

    发明人： Tadashi Terasaki ,  Akito Hirano ,  Masanori Nakayama ,  Unryu Ogawa

    IPC分类号： H01L21/318 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L21/28273 ,  H01J37/32678 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662

    摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

    摘要翻译： 公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜 氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，所述气体通过等离子体喷射，所述气体包括其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理 通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氮氧化硅膜的第二氮化步骤， 热氮化。

    Manufacturing method of semiconductor device and substrate processing apparatus
    9.
    发明申请
    Manufacturing method of semiconductor device and substrate processing apparatus 有权
    半导体器件和衬底处理设备的制造方法

    公开(公告)号：US20090311876A1

    公开(公告)日：2009-12-17

    申请号：US12457493

    申请日：2009-06-12

    申请人： Tadashi Terasaki

    发明人： Tadashi Terasaki

    IPC分类号： H01L21/302 ,  C23C16/513

    CPC分类号： H01L21/32138 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01L21/28247 ,  H01L21/28273 ,  H01L29/517

    摘要： A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber.

    摘要翻译： 一种半导体器件的制造方法，包括以下步骤：将具有高电介质栅极绝缘膜和金属电极的衬底加载到具有通过蚀刻暴露的侧壁的处理室中; 通过向处理室中的含有氢的气体和由等离子体激发的含氧气体供给氧化处理，将基板加热到不允许高介电栅极绝缘膜的温度结晶的温度; 以及从处理室处理后卸载基板。

    Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation
    10.
    发明授权
    Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation 有权
    通过等离子体成膜法和等离子体氮化法制造非易失性半导体存储器件的方法

    公开(公告)号：US08084315B2

    公开(公告)日：2011-12-27

    申请号：US12622816

    申请日：2009-11-20

    申请人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    发明人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/792

    CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

    摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

    摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。