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1.发明授权Process for forming electrodes for semiconductor devices by focused ion beam technology 失效通过聚焦离子束技术形成半导体器件电极的工艺
公开(公告)号：US5043290A
公开(公告)日：1991-08-27
申请号：US338274
申请日：1989-04-14
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
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公开(公告)号：US4948749A
公开(公告)日：1990-08-14
申请号：US338236
申请日：1989-04-14
IPC分类号： H01L21/60 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/76877 , Y10S148/05
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connectig the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
摘要翻译： 一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。 该方法包括以下步骤：在电绝缘涂层上形成导电膜，在电绝缘涂层的一部分暴露在导电部分上方的位置，形成与导电膜上的外部电路连接的电极， 将第一导电膜连接到会聚离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。 结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。
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3.发明授权Process for forming electrodes for semiconductor devices using focused ion beams 失效使用聚焦离子束形成用于半导体器件的电极的工艺
公开(公告)号：US4853341A
公开(公告)日：1989-08-01
申请号：US118031
申请日：1987-11-09
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.
摘要翻译： 一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。 该方法包括以下步骤：在电绝缘涂层上形成导电膜，通过暴露电绝缘涂层的部分和形成在导电膜上方的与外部电路连接的电极，覆盖导电部分 第一导电膜到会聚的离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。 结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。
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公开(公告)号：US4843238A
公开(公告)日：1989-06-27
申请号：US155101
申请日：1988-02-11
IPC分类号： H01L21/66 , G01N23/225 , G01Q60/00 , H01J37/28
CPC分类号： G01N23/2255
摘要： In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.
摘要翻译： 在层状膜中识别起泡膜的方法中，聚焦离子束照射泡囊的大致中心和没有起泡的部分，并且与由照射产生的二次电子的相应数量有关的各组测量数据是 相比之下确定哪一层分层膜已经起泡。 由于采用聚焦离子束，因此本方法适用于分层膜中小泡的检测。 此外，由于消除了现有技术中可能需要的大量切割操作，因此可以稳定，积极和经济地执行本方法。
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5.发明授权Process for forming electrodes for semiconductor devices using focused ion beam deposition 失效使用聚焦离子束沉积形成用于半导体器件的电极的工艺
公开(公告)号：US4962059A
公开(公告)日：1990-10-09
申请号：US338233
申请日：1989-04-14
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
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公开(公告)号：US4723062A
公开(公告)日：1988-02-02
申请号：US061436
申请日：1987-06-15
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L23/52 , C23C16/56 , C23F4/00 , H01L21/3205 , H05K1/09 , H05K3/02 , H05K3/08 , H05K3/22 , B23K26/00
CPC分类号： C23C16/56 , C23F4/00 , H05K3/08 , H05K3/225 , H05K1/09 , H05K2203/107 , H05K2203/1142 , H05K2203/175 , H05K3/027 , Y10T29/49156
摘要： In order to cut a portion of an aluminum interconnection in an aluminum circuit to be disconnected, the aluminum interconnection portion in the region to be cut is covered with a hydrogen-containing silicon nitride film by plasma CVD and is then irradiated with laser beams in an operating sequence consisting of three steps: the first step with relatively low power intensity and long irradiation time duration, the second step with intermediate power intensity and short irradiation time duration and the third step with relatively high power intensity and shortest irradiation time duration.
摘要翻译： 为了将要断开的铝电路中的铝互连部分切割掉，待切割区域中的铝互连部分通过等离子体CVD被含氢氮化硅膜覆盖，然后用激光束 操作顺序由三个步骤组成：第一步功率相对较低，照射持续时间长，第二步具有中等功率强度和较短的照射时间，第三步具有较高的功率强度和最短的照射时间。
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公开(公告)号：US4636400A
公开(公告)日：1987-01-13
申请号：US773918
申请日：1985-09-09
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L21/318 , C23C16/34 , C23C16/56 , H01L21/263 , B05D3/06
CPC分类号： C23C16/56 , C23C16/345
摘要： A method of treating a silicon nitride film formed by plasma deposition and deposited on a substrate, which comprises: (1) irradiating the silicon nitride film, and (2) heating the silicon nitride film during the irradiating.
摘要翻译： 一种处理通过等离子体沉积形成并沉积在衬底上的氮化硅膜的方法，包括：（1）照射氮化硅膜，和（2）在照射期间加热氮化硅膜。
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公开(公告)号：US4691078A
公开(公告)日：1987-09-01
申请号：US823091
申请日：1986-01-21
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L23/52 , C23C16/56 , C23F4/00 , H01L21/3205 , H05K1/09 , H05K3/02 , H05K3/08 , H05K3/22 , H05K1/00 , B23K26/00
CPC分类号： C23C16/56 , C23F4/00 , H05K3/08 , H05K3/225 , H05K1/09 , H05K2203/107 , H05K2203/1142 , H05K2203/175 , H05K3/027 , Y10T29/49156
摘要： In order to cut a portion of an aluminum interconnection to be disconnected in an aluminum circuit, the aluminum interconnection portion in the region to be cut is covered with a hydrogen-containing silicon nitride film by plasma CVD and is then irradiated with laser beams in an operating sequence consisting of three steps: the first step with relatively low power intensity and long irradiation time duration, the second step with intermediate power intensity and short irradiation time duration and the third step with relatively high power intensity and shortest irradiation time duration.
摘要翻译： 为了切断在铝电路中要断开的铝互连部分，待切割区域中的铝互连部分通过等离子体CVD被含氢的氮化硅膜覆盖，然后用激光束照射在 操作顺序由三个步骤组成：第一步功率相对较低，照射持续时间长，第二步具有中等功率强度和较短的照射时间，第三步具有较高的功率强度和最短的照射时间。
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公开(公告)号：US4837445A
公开(公告)日：1989-06-06
申请号：US230347
申请日：1988-08-10
申请人： Tadashi Nishioka , Takao Yasue , Hiroshi Koyama
发明人： Tadashi Nishioka , Takao Yasue , Hiroshi Koyama
IPC分类号： G01B7/34 , G01N23/00 , G01N37/00 , G01Q10/02 , G01Q20/02 , G01Q60/10 , G01Q60/24 , G05D3/10 , G21K5/08 , G21K5/10 , H01J37/20 , H01J37/28
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q10/02 , Y10S977/872
摘要： A coarse adjusting device for coarsely positioning a specimen and a probe relative to each other in a scanning tunneling microscope has a main body having a hollow space formed therein, transmission member extending through the hollow space of the main body and screwed at its one end to the main body so as to be moved in one and the other directions as it is rotated about its axis. The transmission member is provided at its portion within the hollow space with a tapered peripheral surface. The coarse adjusting device also has a coarsely-movable member disposed for movement in the direction perpendicular to the axis of rotation of the transmission member. The coarsely-movable member has one end contacting the tapered surface of the transmission member within the hollow space and the other end extended to the outside of the main body for carrying an object such as a specimen.
摘要翻译： 用于在扫描隧道显微镜中相对于彼此粗略定位样本和探针的粗调整装置具有形成在其中的中空空间的主体，传输构件延伸穿过主体的中空空间并在其一端旋入 主体，以便当其围绕其轴线旋转时在一个方向和另一个方向上移动。 传动构件设置在中空空间内的其具有锥形周边表面的部分。 粗调装置还具有可沿与传动构件的旋转轴线垂直的方向移动的粗动部件。 该可粗动部件具有在中空空间内与传动部件的锥形表面接触的一端，另一端延伸到主体的外侧，用于承载诸如试样的物体。
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公开(公告)号：US4947042A
公开(公告)日：1990-08-07
申请号：US366175
申请日：1989-06-14
申请人： Tadashi Nishioka , Takao Yasue , Hiroshi Koyama
发明人： Tadashi Nishioka , Takao Yasue , Hiroshi Koyama
CPC分类号： G01Q10/04 , B82Y35/00 , G01Q30/08 , G01Q60/16 , Y10S977/86
摘要： A tunnel unit for a scanning tunneling microscope includes a specimen stage having a plurality of pole pieces joined together via a joint member formed of a non-magnetic material and a specimen placing surface where the pole pieces and the joint member are exposed, a permanent magnet rotatably inserted within the specimen stage and at the joint of the plurality of pole pieces, a scanning head main body, which is provided with a piezoelectric element fixed thereto and a probe mounted on the piezoelectric element, being disposed above the specimen placing surface of the specimen stage and extending across the exposed joint member, and three screws formed of a magnetic material and rotatably mounted on the scanning head main body, the screws having their end portions in contact with the specimen placing surface of the specimen stage for supporting the scanning head main body above the specimen placing surface.
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