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    Method for identifying a blistered film in layered films
    1.
    发明授权
    Method for identifying a blistered film in layered films 失效
    用于识别层状膜中起泡膜的方法

    公开(公告)号：US4843238A

    公开(公告)日：1989-06-27

    申请号：US155101

    申请日：1988-02-11

    申请人： Tadashi Nishioka ,  Hiroaki Morimoto ,  Yoji Mashiko ,  Hiroshi Koyama

    发明人： Tadashi Nishioka ,  Hiroaki Morimoto ,  Yoji Mashiko ,  Hiroshi Koyama

    IPC分类号： H01L21/66 ,  G01N23/225 ,  G01Q60/00 ,  H01J37/28

    CPC分类号： G01N23/2255

    摘要： In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.

    摘要翻译： 在层状膜中识别起泡膜的方法中，聚焦离子束照射泡囊的大致中心和没有起泡的部分，并且与由照射产生的二次电子的相应数量有关的各组测量数据是 相比之下确定哪一层分层膜已经起泡。 由于采用聚焦离子束，因此本方法适用于分层膜中小泡的检测。 此外，由于消除了现有技术中可能需要的大量切割操作，因此可以稳定，积极和经济地执行本方法。

    Process for forming electrodes for semiconductor devices by focused ion beam technology
    2.
    发明授权
    Process for forming electrodes for semiconductor devices by focused ion beam technology 失效
    通过聚焦离子束技术形成半导体器件电极的工艺

    公开(公告)号：US5043290A

    公开(公告)日：1991-08-27

    申请号：US338274

    申请日：1989-04-14

    申请人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    发明人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76877 ,  Y10S148/02 ,  Y10S148/05 ,  Y10S148/131 ,  Y10S148/158

    摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

    Process for forming electrodes for semiconductor devices
    3.
    发明授权
    Process for forming electrodes for semiconductor devices 失效
    用于形成用于半导体器件的电极的工艺

    公开(公告)号：US4948749A

    公开(公告)日：1990-08-14

    申请号：US338236

    申请日：1989-04-14

    申请人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    发明人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    IPC分类号： H01L21/60 ,  H01L21/768

    CPC分类号： H01L21/76897 ,  H01L21/76877 ,  Y10S148/05

    摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connectig the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

    摘要翻译： 一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。 该方法包括以下步骤：在电绝缘涂层上形成导电膜，在电绝缘涂层的一部分暴露在导电部分上方的位置，形成与导电膜上的外部电路连接的电极， 将第一导电膜连接到会聚离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。 结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

    Process for forming electrodes for semiconductor devices using focused ion beams
    4.
    发明授权
    Process for forming electrodes for semiconductor devices using focused ion beams 失效
    使用聚焦离子束形成用于半导体器件的电极的工艺

    公开(公告)号：US4853341A

    公开(公告)日：1989-08-01

    申请号：US118031

    申请日：1987-11-09

    申请人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    发明人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76877 ,  Y10S148/02 ,  Y10S148/05 ,  Y10S148/131 ,  Y10S148/158

    摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.

    摘要翻译： 一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。 该方法包括以下步骤：在电绝缘涂层上形成导电膜，通过暴露电绝缘涂层的部分和形成在导电膜上方的与外部电路连接的电极，覆盖导电部分 第一导电膜到会聚的离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。 结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

    Process for forming electrodes for semiconductor devices using focused ion beam deposition
    5.
    发明授权
    Process for forming electrodes for semiconductor devices using focused ion beam deposition 失效
    使用聚焦离子束沉积形成用于半导体器件的电极的工艺

    公开(公告)号：US4962059A

    公开(公告)日：1990-10-09

    申请号：US338233

    申请日：1989-04-14

    申请人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    发明人： Tadashi Nishioka ,  Yoji Mashiko ,  Hiroaki Morimoto ,  Hiroshi Koyama

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76877 ,  Y10S148/02 ,  Y10S148/05 ,  Y10S148/131 ,  Y10S148/158

    摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.