公开(公告)号：US09485321B2

公开(公告)日：2016-11-01

申请号：US13558865

申请日：2012-07-26

申请人： Tae-jeoung Kim ,  Man-seok Kang ,  Tae-wan Kim

发明人： Tae-jeoung Kim ,  Man-seok Kang ,  Tae-wan Kim

IPC分类号： H04L29/08

CPC分类号： H04L67/2809 ,  H04L67/26 ,  H04L67/2823 ,  H04L67/303

摘要： A method and apparatus for brokering a communication connection between a device and a push server for providing a push service irrespective of a protocol difference between the device and the push server, and a computer readable storage medium for executing the method. The method includes: authenticating a connection between at least one device and a brokering apparatus based on protocol information relating to the at least one device; and if data is received from the server when the at least one device is connected to the brokering apparatus, modifying the data received from the server based on a protocol relating to the at least one device, and transmitting the modified data to the at least one device, wherein the brokering apparatus performs the modifying.

摘要翻译： 一种用于经纪设备和推送服务器之间的通信连接的方法和装置，用于提供推送服务，而与设备和推送服务器之间的协议差异无关，以及用于执行该方法的计算机可读存储介质。 该方法包括：基于与所述至少一个设备有关的协议信息来认证至少一个设备和经纪设备之间的连接; 并且如果当所述至少一个设备连接到所述代理设备时从所述服务器接收到数据，则基于与所述至少一个设备相关的协议来修改从所述服务器接收到的数据，并将所述修改的数据发送到所述至少一个 装置，其中所述代理装置执行所述修改。

公开(公告)号：US07508699B2

公开(公告)日：2009-03-24

申请号：US11164579

申请日：2005-11-29

申请人： In-Jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-Jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

摘要翻译： 磁性随机存取存储器（MRAM）装置的示例性实施例包括具有自由层的磁性隧道结，具有覆盖自由层的表面的第一部分的第一电极（第一磁场产生装置）和电力 源极经由覆盖小于第一电极的第一部分的一半的连接而连接到第一电极。 MRAM器件的另一个示例性实施例包括磁性隧道结，直接连接到磁性隧道结相对侧上的磁性隧道结的第一和第二电极（第一和第二磁场产生装置）和具有一个极点的电源 经由第一连接器连接到第一电极，并且具有通过第二连接连接到第二电极的第二极，其中第一和第二连接部从第一和第二电极与磁性隧道结之间的连接侧向偏移。 还公开了操作和制造这些磁性随机存取存储器的方法。

公开(公告)号：US20080009080A1

公开(公告)日：2008-01-10

申请号：US11898762

申请日：2007-09-14

申请人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

发明人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

IPC分类号： H01L21/00

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

摘要翻译： 提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。 多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜 当上下磁性膜具有相反的磁化方向时。

公开(公告)号：US07252716B2

公开(公告)日：2007-08-07

申请号：US10713258

申请日：2003-11-17

申请人： Tae-wan Kim ,  Yuri Nikolaevich Tolmachev ,  Dong-joon Ma ,  Sergiy Yakovlevich Navala

发明人： Tae-wan Kim ,  Yuri Nikolaevich Tolmachev ,  Dong-joon Ma ,  Sergiy Yakovlevich Navala

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/4558

摘要： A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system includes an injector in contact with an inner surface of a wall of the reaction chamber. The injector has a plurality of nozzles through which the reactive gas is injected into the reaction chamber. A gas inlet penetrates the wall of the reaction chamber. A manifold is disposed between the wall of the reaction chamber and the injector, and supplies the reactive gas flowing through the gas inlet to the nozzles. Gas channels in the manifold are arranged on a plurality of levels to equalize the lengths of gas paths connecting the gas inlet to each of the plurality of nozzles. This configuration makes the flow rate of reactive gas supplied through each of the plurality of nozzles to the reaction chamber uniform.

摘要翻译： 用于将反应性气体注入半导体处理系统的反应室的气体注入装置包括与反应室的壁的内表面接触的喷射器。 喷射器具有多个喷嘴，反应气体通过喷嘴喷射到反应室中。 气体入口穿透反应室的壁。 歧管设置在反应室的壁和喷射器之间，并将流过气体入口的反应气体供应到喷嘴。 歧管中的气体通道布置在多个水平面上以均衡连接到多个喷嘴中的每一个喷嘴的气体入口的气体路径的长度。 这种构造使得通过多个喷嘴中的每一个喷射到反应室的反应气体的流量均匀。

公开(公告)号：US20060198182A1

公开(公告)日：2006-09-07

申请号：US11363244

申请日：2006-02-28

申请人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

发明人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A memory device with a magnetic field generator and method of operating and manufacturing the same. In the device and method, a magnetic memory may includes a magnetic tunneling junction (MTJ) cell, a transistor, and a bit line, and a magnetic field generator external to the magnetic memory to generate a global magnetic field toward the magnetic memory in a parallel direction to the bit line.

公开(公告)号：US20060169372A1

公开(公告)日：2006-08-03

申请号：US11393691

申请日：2006-03-31

申请人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

发明人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

IPC分类号： B22F1/00

CPC分类号： B22F1/0085 ,  B22F2999/00 ,  B82Y25/00 ,  H01F1/14733 ,  H01M4/52 ,  Y10S977/777 ,  B22F1/0022

摘要： Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders have non-magnetic property and a HCP crystal structure. The method include (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration phenomenon. Therefore, the pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present invention, can keep the well-dispersed state. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.

摘要翻译： 提供非磁性镍粉末及其制备方法。 镍粉具有非磁性和HCP晶体结构。 该方法包括（a）将FCC晶体结构的镍粉分散在有机溶剂中以制备原料分散体，（b）加热原料分散液，将FCC晶体结构的镍粉转化为镍粉， HCP晶体结构。 镍粉不显示磁性聚集现象。 因此，含有本发明的镍粉末的各种电子器件中的内部电极形成用糊料可以保持良好的分散状态。 此外，即使在高频带，由镍粉制成的内电极也可以具有低阻抗值。

公开(公告)号：US20050174834A1

公开(公告)日：2005-08-11

申请号：US10987185

申请日：2004-11-15

申请人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

发明人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01F10/13 ,  H01F10/32 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/135 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.

摘要翻译： 磁性隧道结（MTJ）单元包括具有低磁矩的自由磁性层，磁性随机存取存储器（MRAM）包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极，下磁层，隧道层，上磁层和上电极。 上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比，并且自由磁性层可具有约800emu / cm 3以下的磁矩。

公开(公告)号：US06815784B2

公开(公告)日：2004-11-09

申请号：US10445828

申请日：2003-05-28

申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

IPC分类号： H01L2982

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

公开(公告)号：US07751223B2

公开(公告)日：2010-07-06

申请号：US11707002

申请日：2007-02-16

申请人： Tae-wan Kim ,  Kee-won Kim ,  Young-jin Cho ,  In-jun Hwang

发明人： Tae-wan Kim ,  Kee-won Kim ,  Young-jin Cho ,  In-jun Hwang

IPC分类号： G11C19/00

CPC分类号： G11C11/16 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/77

摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.

摘要翻译： 磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。 记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。 记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。 磁畴对应于参考层的有效尺寸。 第一输入部分输入写入信号和读取信号中的至少一个。 第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。

公开(公告)号：US07738278B2

公开(公告)日：2010-06-15

申请号：US11706988

申请日：2007-02-16

申请人： Tae-wan Kim ,  Young-jin Cho ,  Kee-won Kim ,  In-jun Hwang

发明人： Tae-wan Kim ,  Young-jin Cho ,  Kee-won Kim ,  In-jun Hwang

IPC分类号： G11C19/00

CPC分类号： G11C11/15 ,  G11C19/0808 ,  G11C19/0841

摘要： A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.

摘要翻译： 提供磁存储器件。 磁存储器件可以包括其中形成多个磁畴的存储器轨道，使得其中每一个可以是磁畴的数据位被存储在阵列中。 存储器轨道可以由非晶软磁材料形成。