利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

109 条记录 (耗时 0.03 秒)

    Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM
    1.
    发明授权
    Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM 有权
    用于自发厅效应的磁随机存取存储器（MRAM）和使用MRAM写入和读取数据的方法

    公开(公告)号：US06894920B2

    公开(公告)日：2005-05-17

    申请号：US10465602

    申请日：2003-06-20

    申请人： Tae-wan Kim ,  Kee-won Kim ,  Wan-jun Park ,  I-hun Song ,  Sang-jin Park

    发明人： Tae-wan Kim ,  Kee-won Kim ,  Wan-jun Park ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/18 ,  H01L21/8246 ,  H01L43/06 ,  G11C11/00

    CPC分类号： G11C11/18 ,  G11C11/1675

    摘要： A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating layer formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.

    摘要翻译： 使用热磁自发霍尔效应的磁性RAM（MRAM）包括形成在基板上的MOS晶体管; 形成在所述MOS晶体管的上方并与所述MOS晶体管的源极区连接的加热层; 存储层，具有写入数据的数据写入区域，所述数据写入区域形成在所述加热装置上; 形成在数据写入区上的位线; 形成在位线和存储层上的上绝缘膜; 以及形成在上绝缘膜上的写入线，使得至少在存储层的数据写入区域中产生写入数据所需的磁场。 MRAM使用自发霍尔电压根据存储器层的磁化状态大大不同的事实来写入或读取数据，从而为器件提供高数据感测余量。

    Magneto-resistive random access memory
    2.
    发明授权
    Magneto-resistive random access memory 有权
    磁阻随机存取存储器

    公开(公告)号：US06815784B2

    公开(公告)日：2004-11-09

    申请号：US10445828

    申请日：2003-05-28

    申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L2982

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

    Magnetic random access memory and method of operating the same
    4.
    发明授权
    Magnetic random access memory and method of operating the same 有权
    磁性随机存取存储器及其操作方法

    公开(公告)号：US06781871B2

    公开(公告)日：2004-08-24

    申请号：US10316844

    申请日：2002-12-12

    申请人： Wan-jun Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park ,  Richard J. Gambino

    发明人： Wan-jun Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park ,  Richard J. Gambino

    IPC分类号： G11C1100

    CPC分类号： G11C19/0808 ,  G11C11/15 ,  G11C11/16

    摘要： A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.

    摘要翻译： 一种使用磁畴阻力和巨磁阻（GMR）或隧道磁阻（TMR）的磁性随机存取存储器及其操作方法，其中磁性随机存取存储器包括数据存储单元，其包括固定层，非磁性层 和具有两端的自由层; 电连接到自由层的两端的数据输入装置，用于向自由层施加电流以将数据输入数据存储单元; 以及电连接到所述自由层和所述固定层的数据输出装置，以输出存储在所述数据存储单元中的数据。 因此，根据本发明的磁性随机存取存储器具有比使用切换字段来记录数据的磁性随机存取存储器更好的性能。

    Method for manufacturing magneto-resistive random access memory
    5.
    发明授权
    Method for manufacturing magneto-resistive random access memory 有权
    制造磁阻随机存取存储器的方法

    公开(公告)号：US07220599B2

    公开(公告)日：2007-05-22

    申请号：US10950584

    申请日：2004-09-28

    申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L21/00 ,  H01L29/76

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

    摘要翻译： 磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极 栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。

    Magneto-resistive random access memory and method for manufacturing the same
    8.
    发明申请
    Magneto-resistive random access memory and method for manufacturing the same 有权
    磁阻随机存取存储器及其制造方法

    公开(公告)号：US20050036399A1

    公开(公告)日：2005-02-17

    申请号：US10950584

    申请日：2004-09-28

    申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/34 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

    摘要翻译： 磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极 栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。

    Method for forming magnetic tunneling junction layer for magnetic random access memory
    9.
    发明授权
    Method for forming magnetic tunneling junction layer for magnetic random access memory 有权
    磁性随机存取存储器磁隧道结层形成方法

    公开(公告)号：US06884731B2

    公开(公告)日：2005-04-26

    申请号：US10765279

    申请日：2004-01-28

    申请人： Soon-won Hwang ,  I-hun Song ,  Tae-wan Kim

    发明人： Soon-won Hwang ,  I-hun Song ,  Tae-wan Kim

    IPC分类号： H01L21/3065 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/302 ,  H01L21/336 ,  H01L21/461 ,  H01L21/70 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/12

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16 ,  H01L43/12

    摘要： A method of forming a magnetic tunneling junction (MTJ) layer for an MRAM includes sequentially forming a lower material layer, an insulation layer, and an upper material layer on a substrate, forming a mask pattern on a predetermined region of the upper material layer, sequentially removing the upper material layer, the insulation layer, and the lower material layer from around the mask pattern using plasma generated from an etching gas, wherein the etching gas is a mixture of a main gas and an additive gas having a predetermined mixture ratio and including no chlorine (Cl2) gas, and removing the mask pattern. Accordingly, an MTJ layer formed by the method may incur no thermal damage due to high temperature etching, no material deposits due to by-products of etching, and no step difference or corrosion due to chlorine gas, and may have an excellent profile.

    摘要翻译： 形成用于MRAM的磁隧道结（MTJ）层的方法包括：在衬底上依次形成下层材料层，绝缘层和上层材料层，在上层材料层的预定区域上形成掩模图案， 使用从蚀刻气体产生的等离子体从掩模图案周围顺序地去除上部材料层，绝缘层和下部材料层，其中，蚀刻气体是主要气体和具有预定混合比的添加剂气体的混合物， 包括没有氯（Cl 2/2））气体，并且去除掩模图案。 因此，通过该方法形成的MTJ层可能不会由于高温蚀刻而导致热损伤，由于蚀刻的副产物而没有材料沉积，并且没有由于氯气导致的阶梯差或腐蚀，并且可能具有优异的外形。