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    Method of fabricating a semiconductor device, and chemical mechanical polish tool
    2.
    发明授权
    Method of fabricating a semiconductor device, and chemical mechanical polish tool 有权
    制造半导体器件的方法和化学机械抛光工具

    公开(公告)号：US09370854B2

    公开(公告)日：2016-06-21

    申请号：US14079008

    申请日：2013-11-13

    Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

    Inventor： Han-Hsin Kuo ,  Fu-Ming Huang

    IPC: B24B37/34 ,  H01L21/67 ,  H01L21/768

    CPC classification number: B24B37/345 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/3212 ,  H01L21/67219 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76883

    Abstract: The present disclosure provides a method of fabricating a semiconductor device with metal interconnections and a design of a tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device, the method includes providing a semiconductor substrate, depositing a dielectric layer over the semiconductor substrate, forming at least one trench in the dielectric layer, and forming a metallization layer in the trench and over the dielectric layer. The method further includes performing a chemical mechanical polishing process to planarize the metallization layer and the dielectric layer, performing a surface treatment on the planarized dielectric layer to form a protection layer, cleaning the planarized metallization layer and the treated dielectric layer to remove residue from the chemical mechanical polishing process, and drying the cleaned metallization layer and dielectric layer in an inert gas environment.

    Abstract translation: 本公开提供了一种制造具有金属互连的半导体器件的方法和用于执行这种方法的工具的设计。 在一个实施例中，一种制造半导体器件的方法，所述方法包括提供半导体衬底，在所述半导体衬底上沉积介电层，在所述电介质层中形成至少一个沟槽，以及在所述沟槽中形成金属化层 电介质层。 该方法还包括进行化学机械抛光工艺以使金属化层和电介质层平坦化，在平坦化介电层上进行表面处理以形成保护层，清洁平坦化的金属化层和经过处理的电介质层以从 化学机械抛光工艺，并在惰性气体环境中干燥清洁的金属化层和电介质层。

    Method Of Fabricating A Semiconductor Device, And Chemical Mechanical Polish Tool
    3.
    发明申请
    Method Of Fabricating A Semiconductor Device, And Chemical Mechanical Polish Tool 有权
    制造半导体器件的方法和化学机械抛光工具

    公开(公告)号：US20150132948A1

    公开(公告)日：2015-05-14

    申请号：US14079008

    申请日：2013-11-13

    Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

    Inventor： Han-Hsin Kuo ,  Fu-Ming Huang

    IPC: H01L21/768 ,  B24B37/34 ,  H01L21/67

    CPC classification number: B24B37/345 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/3212 ,  H01L21/67219 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76883

    Abstract: The present disclosure provides a method of fabricating a semiconductor device with metal interconnections and a design of a tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device, the method includes providing a semiconductor substrate, depositing a dielectric layer over the semiconductor substrate, forming at least one trench in the dielectric layer, and forming a metallization layer in the trench and over the dielectric layer. The method further includes performing a chemical mechanical polishing process to planarize the metallization layer and the dielectric layer, performing a surface treatment on the planarized dielectric layer to form a protection layer, cleaning the planarized metallization layer and the treated dielectric layer to remove residue from the chemical mechanical polishing process, and drying the cleaned metallization layer and dielectric layer in an inert gas environment.

    Abstract translation: 本公开提供了一种制造具有金属互连的半导体器件的方法和用于执行这种方法的工具的设计。 在一个实施例中，一种制造半导体器件的方法，所述方法包括提供半导体衬底，在所述半导体衬底上沉积介电层，在所述电介质层中形成至少一个沟槽，以及在所述沟槽中形成金属化层 电介质层。 该方法还包括进行化学机械抛光工艺以使金属化层和电介质层平坦化，在平坦化介电层上进行表面处理以形成保护层，清洁平坦化的金属化层和经过处理的电介质层以从 化学机械抛光工艺，并在惰性气体环境中干燥清洁的金属化层和电介质层。

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