公开(公告)号：US20160366756A1

公开(公告)日：2016-12-15

申请号：US14736322

申请日：2015-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsiao-Chen Wu ,  Jaw-Jung Shin

IPC: H05G2/00 ,  G03F7/20

CPC classification number: H05G2/005 ,  G03F7/70033 ,  H05G2/006 ,  H05G2/008

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.

Abstract translation: 本公开涉及产生具有由电磁场控制的轨迹的带电的锡液滴的极紫外（EUV）辐射源，以及相关联的方法。 在一些实施例中，EUV辐射源具有产生激光束的激光。 带电燃料液滴发生器为EUV源容器提供具有净电荷的多个带电燃料液滴。 电磁场发生器产生电场和/或磁场。 带电燃料液滴的净电荷导致电场或磁场在带电的燃料液滴上产生一个力，其控制带电燃料液滴与激光束相交的轨迹。 通过使用电场或磁场来控制带电燃料液滴的轨迹，EUV系统能够避免激光束和带电燃料液滴之间的焦点问题。

公开(公告)号：US12038684B2

公开(公告)日：2024-07-16

申请号：US18188403

申请日：2023-03-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsiao-Chen Wu ,  Pei-Cheng Hsu

IPC: G03F1/24 ,  G03F1/40 ,  G03F1/48 ,  G03F1/58 ,  G03F1/80 ,  G03F1/82

CPC classification number: G03F1/24 ,  G03F1/40 ,  G03F1/48 ,  G03F1/58 ,  G03F1/80 ,  G03F1/82

Abstract: The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

公开(公告)号：US08988652B2

公开(公告)日：2015-03-24

申请号：US13654750

申请日：2012-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Tsiao-Chen Wu ,  Chia-Hao Hsu ,  Chia-Chen Chen ,  Ying-Yu Chen ,  Tzu-Li Lee ,  Shang-Chieh Chien ,  Jeng-Horng Chen ,  Anthony Yen

IPC: G03F7/20

CPC classification number: G03F7/2002 ,  G03F7/20 ,  G03F7/70916 ,  G03F7/70933

Abstract: A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

Abstract translation: 提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。 产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。 惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。 惰性气体迅速耗尽并且在曝光位置包括短的共振时间。 惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。

公开(公告)号：US11243461B2

公开(公告)日：2022-02-08

申请号：US16656227

申请日：2019-10-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsiao-Chen Wu ,  Pei-Cheng Hsu

IPC: G03F1/24 ,  G03F1/80 ,  G03F1/40

Abstract: A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

公开(公告)号：US10310380B2

公开(公告)日：2019-06-04

申请号：US15632500

申请日：2017-06-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsiao-Chen Wu ,  Chun-Lin Louis Chang

IPC: G03F7/20 ,  H05G2/00

Abstract: A method for generating high-brightness light sources is provided. The method includes introducing a gaseous material into the target material. The method further includes supplying the target material into a fuel target generator. The method also includes generating targets by forcing the target material with the gaseous material out of the fuel target generator. In addition, the method includes expanding the gaseous material in the targets to transform the targets to target mists. The method also includes focusing a main pulse laser on the target mists to generate plasma emitting high-brightness light.

公开(公告)号：US09847302B2

公开(公告)日：2017-12-19

申请号：US13974246

申请日：2013-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsiao-Chen Wu ,  Fang Lin

IPC: H01L23/58 ,  H01L23/00 ,  H01L23/31 ,  H01L21/027 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L23/564 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3081 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Hydroxyl moieties are formed on a surface over a semiconductor substrate. The surfaces are silylized to replace the hydroxyl groups with silyl ether groups, the silyl ether groups being of the form: —OSiR1R2R3, where R1, R2, and R3 are each hydrocarbyl groups comprising at least one carbon atom. Silylation protects the wafers from forming defects through hydrolysis while the wafers are being transported or stored under ambient conditions.

公开(公告)号：US09538628B1

公开(公告)日：2017-01-03

申请号：US14736322

申请日：2015-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsiao-Chen Wu ,  Jaw-Jung Shin

IPC: H05G2/00 ,  G03F7/20

CPC classification number: H05G2/005 ,  G03F7/70033 ,  H05G2/006 ,  H05G2/008

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.

Abstract translation: 本公开涉及产生具有由电磁场控制的轨迹的带电的锡液滴的极紫外（EUV）辐射源，以及相关联的方法。 在一些实施例中，EUV辐射源具有产生激光束的激光。 带电燃料液滴发生器为EUV源容器提供具有净电荷的多个带电燃料液滴。 电磁场发生器产生电场和/或磁场。 带电燃料液滴的净电荷导致电场或磁场在带电的燃料液滴上产生力，其控制带电燃料液滴与激光束相交的轨迹。 通过使用电场或磁场来控制带电燃料液滴的轨迹，EUV系统能够避免激光束和带电燃料液滴之间的焦点问题。

公开(公告)号：US11630386B2

公开(公告)日：2023-04-18

申请号：US17579433

申请日：2022-01-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsiao-Chen Wu ,  Pei-Cheng Hsu

IPC: G03F1/24 ,  G03F1/80 ,  G03F1/40

Abstract: The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.