公开(公告)号：US11776880B2

公开(公告)日：2023-10-03

申请号：US17073937

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC: H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/48 ,  H01L21/563 ,  H01L23/3142 ,  H01L24/97 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/16 ,  H01L24/83 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83051 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2224/13101 ,  H01L2924/014 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2924/15311 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2224/92125 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/97 ,  H01L2224/83

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

公开(公告)号：US08988652B2

公开(公告)日：2015-03-24

申请号：US13654750

申请日：2012-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Tsiao-Chen Wu ,  Chia-Hao Hsu ,  Chia-Chen Chen ,  Ying-Yu Chen ,  Tzu-Li Lee ,  Shang-Chieh Chien ,  Jeng-Horng Chen ,  Anthony Yen

IPC: G03F7/20

CPC classification number: G03F7/2002 ,  G03F7/20 ,  G03F7/70916 ,  G03F7/70933

Abstract: A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

Abstract translation: 提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。 产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。 惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。 惰性气体迅速耗尽并且在曝光位置包括短的共振时间。 惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。

公开(公告)号：US20210050281A1

公开(公告)日：2021-02-18

申请号：US17073937

申请日：2020-10-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Horng Chang ,  Jie-Cheng Deng ,  Tin-Hao Kuo ,  Ying-Yu Chen

IPC: H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.