公开(公告)号：US20040040509A1

公开(公告)日：2004-03-04

申请号：US10235120

申请日：2002-09-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Liang Lu ,  Chin-Yuan Hsu ,  Wen-Zhong Ho ,  Chong-Lee Chen

IPC: H01L021/306

CPC classification number: H01L21/67115 ,  H01L21/67109

Abstract: An apparatus and a method for preventing etchant condensation on a wafer surface positioned in a wafer cool-down chamber after plasma etching. The apparatus of the process chamber includes a chamber enclosure of elongated shape with an aperture in a top plate, a heating means mounted on the top plate for heating a wafer through the aperture positioned in the cavity; and an exhaust means in fluid communication with an exhaust opening provided at a back end of the chamber enclosure for evacuating gaseous content in the cavity during and after the heating of the wafer, and for cooling the wafer after the radiant heater is turned off.

Abstract translation: 一种用于在等离子体蚀刻之后防止位于晶片冷却室中的晶片表面上的蚀刻剂冷凝的装置和方法。 处理室的装置包括细长形状的腔室封壳，顶板中具有孔，加热装置安装在顶板上，用于通过位于空腔中的孔加热晶片; 以及与设置在室外壳的后端处的排气口流体连通的排气装置，用于在晶片加热期间和之后抽空空腔中的气体含量，并且在辐射加热器关闭之后冷却晶片。

公开(公告)号：US20040134513A1

公开(公告)日：2004-07-15

申请号：US10340119

申请日：2003-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Liang Lu ,  Wen-Song Tseng

IPC: B08B003/12

CPC classification number: B08B3/12 ,  Y10S134/902

Abstract: A method of cleaning particulates from a solution bath including at least partially filling a deionized water (DIW) bath for rinsing at least one wafer following chemically cleaning the at least one wafer; rinsing the at least one wafer; transferring the at least one wafer to a downstream process; at least partially draining the DIW from the DIW bath; at least partially filling the DIW bath with a bath cleaning solution; and, applying at least one source of ultrasonic energy to agitate the bath cleaning solution.

Abstract translation: 一种从溶液浴清洗颗粒的方法，包括至少部分地填充去离子水（DIW）浴，用于在化学清洁所述至少一个晶片之后漂洗至少一个晶片; 漂洗所述至少一个晶片; 将所述至少一个晶片传送到下游处理; DIW至少部分排出DIW; 用洗浴液至少部分填充DIW浴; 并且施加至少一个超声能量源以搅拌浴清洗溶液。

公开(公告)号：US20030119300A1

公开(公告)日：2003-06-26

申请号：US10032341

申请日：2001-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Cheng Chiu ,  Sheng-Liang Pan ,  Kuo-Liang Lu

IPC: H01L021/44

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11902 ,  H01L2224/11914 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A method of forming a bump on a substrate such as a semiconductor wafer or flip chip. The method includes the step of providing a semiconductor device having a contact pad and an upper passivation layer and an opening formed in the upper passivation layer exposing a portion of the contact pad. An under bump metallurgy is deposited over the upper passivation layer and the contact pad. A first photoresist layer is deposited in a liquid state so that the first photoresist layer covers the under bump metallurgy. A second photoresist layer is deposited and the second photoresist layer is a dry film photoresist. The unexposed portions of the first photoresist layer are removed. The remaining portions of the first photoresist layers are removed. The electrically conductive material is reflown to provide a bump on the semiconductor device.

Abstract translation: 在半导体晶片或倒装芯片等基板上形成凸点的方法。 该方法包括提供具有接触焊盘和上钝化层的半导体器件的步骤，以及形成在上钝化层中的开口，露出接触焊盘的一部分。 在上钝化层和接触焊盘上沉积凸块下冶金。 以液态沉积第一光致抗蚀剂层，使得第一光致抗蚀剂层覆盖凸块下金属。 沉积第二光致抗蚀剂层，第二光致抗蚀剂层是干膜光致抗蚀剂。 去除第一光致抗蚀剂层的未曝光部分。 去除第一光致抗蚀剂层的剩余部分。 导电材料被重熔以在半导体器件上提供凸块。

公开(公告)号：US20030020083A1

公开(公告)日：2003-01-30

申请号：US09918043

申请日：2001-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Sheng Hsiung ,  Kuo-Liang Lu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Fu-Tien Wong ,  Sung-Yung Yang ,  Chin-Chen Kuo

IPC: H01L033/00 ,  H01L031/062

CPC classification number: H01L31/02162 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/156

Abstract: Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.

公开(公告)号：US20020153350A1

公开(公告)日：2002-10-24

申请号：US09837125

申请日：2001-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Liang Lu ,  Yung-Chih Yao

IPC: B44C001/22 ,  C23C014/00 ,  C23F001/00

CPC classification number: C23C16/45519 ,  C23C16/4557 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/67109 ,  H01L21/67115

Abstract: A method and an apparatus for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100null C and about 150null C. The present invention is further directed to an apparatus of a plasma process chamber that is equipped with a primary heating means and an auxiliary heating means. The auxiliary heating means is turned on as soon as the primary heating means is turned off such that a heated gas is flown onto the top chamber lid, thus preventing contaminating particles from falling off the chamber wall and preventing contamination of a wafer situated inside the chamber.

Abstract translation: 本发明提供一种用于防止室内主加热装置关闭时等离子体处理室中的污染的方法和装置。 在该方法中，加热的气体流过等离子体处理室的顶部室盖。 合适的加热气体可以是加热到约100℃和约150℃之间的温度的氮气。本发明还涉及一种等离子体处理室的装置，其装备有初级加热装置和辅助加热装置 加热方式。 一旦主加热装置被关闭，辅助加热装置就被打开，使得加热的气体流到顶部室盖上，从而防止污染的颗粒从室壁上脱落并防止位于室内的晶片的污染 。

公开(公告)号：US20020063214A1

公开(公告)日：2002-05-30

申请号：US09725973

申请日：2000-11-29

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Yu-Kung Hsiao ,  Chih-Kung Chang ,  Fu-Tien Weng ,  Chung-Sheng Hsiung ,  Bii-Jung Chang ,  Kuo-Liang Lu

IPC: G01J005/20

CPC classification number: G01J5/08 ,  G01J5/024 ,  G01J5/0806 ,  G01J5/0862 ,  G01J5/0884 ,  H01L27/14621

Abstract: Within both a method for fabricating an optoelectronic microelectronic fabrication and the optoelectronic microelectronic fabrication fabricated in accord with the method for fabricating the optoelectronic microelectronic fabrication there is first provided a substrate having formed therein a minimum of one photoactive region which is sensitive to infrared radiation. There is also formed over the substrate and in registration with the minimum of one optically active region a minimum of one microlens layer. Similarly, there is also formed interposed between the substrate and the minimum of one microlens layer an infrared filter layer, wherein the infrared filter is not formed contacting the substrate. The method provides that the optoelectronic microelectronic fabrication is fabricated with enhanced optical sensitivity.

Abstract translation: 在制造光电子微电子制造的方法和根据制造光电微电子制造的方法制造的光电子微电子制造中，首先提供了在其中形成有至少一个对红外辐射敏感的光活性区的衬底。 还在衬底上形成最小的一个光学活性区域至少一个微透镜层。 类似地，还形成了介于基板和最小的一个微透镜层之间的红外滤光器层，其中红外滤光器不与基板接触。 该方法提供了光电微电子制造以增强的光学灵敏度制造。