-
公开(公告)号：US12147255B2
公开(公告)日：2024-11-19
申请号：US18296474
申请日：2023-04-06
Inventor： Szu-Chun Tsao , Jaw-Juinn Horng , Bindu Madhavi Kasina , Yi-Wen Chen
Abstract: Systems and methods as described herein may take a variety of forms. In one example, systems and methods are provided for a circuit for powering a voltage regulator. A voltage regulator circuit has an output electrically coupled to a gate of an output driver transistor, the output driver transistor having a first terminal electrically coupled to a voltage source and a second terminal electrically coupled to a first terminal of a voltage divider, the voltage divider having an second terminal electrically coupled to ground, and the voltage divider having an output of a stepped down voltage. A power control circuitry transistor has a first terminal electrically coupled to the voltage source, the power control circuitry transistor having a second terminal electrically coupled to the gate terminal of the output driver transistor, and the power control circuitry transistor having a gate terminal electrically coupled to a status voltage signal.
-
公开(公告)号：US20240379757A1
公开(公告)日：2024-11-14
申请号：US18782388
申请日：2024-07-24
Inventor： Jaw-Juinn Horng , Yi-Wen Chen , Chin-Ho Chang , Po-Yu Lai , Yung-Chow Peng
IPC: H01L29/06 , H01L27/088 , H01L29/40
Abstract: A device including at least one transistor cell including metal-oxide semiconductor field-effect transistors each having drain/source terminals and a channel length. The at least one transistor cell includes a first number of transistors of the metal-oxide semiconductor field-effect transistors connected in series, with one of the drain/source terminals of one of the first number of transistors connected to one of the drain/source terminals of another one of the first number of transistors and gates of the first number of transistors connected together. The at least one transistor cell configured to be used to provide a transistor having a longer channel length than the channel length of each of the metal-oxide semiconductor field-effect transistors.
-
公开(公告)号：US20240143008A1
公开(公告)日：2024-05-02
申请号：US18410523
申请日：2024-01-11
Inventor： Szu-Chun Tsao , Yi-Wen Chen , Jaw-Juinn Horng
IPC: G05F1/575 , G05F1/565 , H03K19/0185
CPC classification number: G05F1/575 , G05F1/565 , H03K19/018521
Abstract: A middle-range (mid) low dropout (LDO) voltage has both sinking and sourcing current capability. The mid LDO can provide a voltage reference in active mode and power mode for core only design to work in a Safe Operating Area (SOA). The output of mid LDO can track IO power and/or core power dynamically. The mid LDO can comprise a voltage reference generator and a power-down controller connected to an amplifier, which output is connected to a decoupling capacitor. The provision of a high ground signal allows the mid LDO provide the sinking and sourcing currents.
-
公开(公告)号：US11942392B2
公开(公告)日：2024-03-26
申请号：US17583158
申请日：2022-01-24
Inventor： Jaw-Juinn Horng , Szu-Lin Liu , Wei-Lin Lai
IPC: H01L23/367 , H01L23/00
CPC classification number: H01L23/3677 , H01L24/45 , H01L2224/4807 , H01L2224/48227 , H01L2924/14
Abstract: An IC device includes first and second resistors. The first resistor includes first and second metal segments extending in a first direction in a first metal layer, and a third metal segment extending in a second direction in a second metal layer, and electrically connecting the first and second metal segments. The second resistor includes fourth and fifth metal segments extending in the first direction in the first metal layer, and a sixth metal segment extending in the second direction in a third metal layer, and electrically connecting the fourth and fifth metal segments. The fourth and fifth metal segment have a width greater than a width of the first and second metal segments, the fourth metal segment is between the first and second metal segments and separated from the first metal segment by a distance, and a fourth and fifth metal segment separation is greater than the distance.
-
公开(公告)号：US11906997B2
公开(公告)日：2024-02-20
申请号：US17456934
申请日：2021-11-30
Inventor： Szu-Chun Tsao , Yi-Wen Chen , Jaw-Juinn Horng
IPC: G05F1/575 , G05F1/565 , H03K19/0185
CPC classification number: G05F1/575 , G05F1/565 , H03K19/018521
Abstract: A middle-range (mid) low dropout (LDO) voltage has both sinking and sourcing current capability. The mid LDO can provide a voltage reference in active mode and power mode for core only design to work in a Safe Operating Area (SOA). The output of mid LDO can track TO power and/or core power dynamically. The mid LDO can comprise a voltage reference generator and a power-down controller connected to an amplifier, which output is connected to a decoupling capacitor. The provision of a high ground signal allows the mid LDO provide the sinking and sourcing currents.
-
Patent Agency Ranking
公开(公告)号：US11709200B2
公开(公告)日：2023-07-25
申请号：US17876692
申请日：2022-07-29
Inventor： Szu-Lin Liu , Jaw-Juinn Horng
CPC classification number: G01R31/2875 , G01R1/0458
Abstract: A method of calibrating a thermal sensor device is provided. The method includes extracting an incremental voltage to temperature curve for a diode array from a first incremental voltage of the diode array at a first temperature. The diode array and a device under test (DUT) which includes a thermal sensor are heated. After heating the diode array, a first incremental temperature is determined from the incremental voltage to temperature curve for the diode array and a second incremental voltage of the diode array after heating the diode array. An incremental voltage to temperature curve is extracted for the DUT from the first incremental temperature, a first incremental voltage for the DUT at the first temperature, and a second incremental voltage of the DUT after heating the device under test. A temperature error for the thermal sensor is determined from the incremental voltage to temperature curve for the DUT.
-
公开(公告)号：US11669115B2
公开(公告)日：2023-06-06
申请号：US17458707
申请日：2021-08-27
Inventor： Szu-Chun Tsao , Jaw-Juinn Horng , Bindu Madhavi Kasina , Yi-Wen Chen
Abstract: Systems and methods as described herein may take a variety of forms. In one example, systems and methods are provided for a circuit for powering a voltage regulator. A voltage regulator circuit has an output electrically coupled to a gate of an output driver transistor, the output driver transistor having a first terminal electrically coupled to a voltage source and a second terminal electrically coupled to a first terminal of a voltage divider, the voltage divider having an second terminal electrically coupled to ground, and the voltage divider having an output of a stepped down voltage. A power control circuitry transistor has a first terminal electrically coupled to the voltage source, the power control circuitry transistor having a second terminal electrically coupled to the gate terminal of the output driver transistor, and the power control circuitry transistor having a gate terminal electrically coupled to a status voltage signal.
-
公开(公告)号：US20220364936A1
公开(公告)日：2022-11-17
申请号：US17874476
申请日：2022-07-27
Inventor： Jaw-Juinn Horng , Szu-Lin Liu
Abstract: A thermal sensor in some embodiments comprises two temperature-sensitive branches, each including a thermal-sensing device, such as one or more bipolar-junction transistors, and a current source for generating a current density in the thermal-sensing device to generate a temperature-dependent signal. The thermal sensor further includes a signal processor configured to multiply the temperature-dependent signal from the branches by respective and different gain factors, and combine the resultant signals to generate an output signal that is substantially proportional to the absolute temperature the thermal sensor is disposed at.
-
公开(公告)号：US11489502B2
公开(公告)日：2022-11-01
申请号：US17070281
申请日：2020-10-14
Inventor： Bei-Shing Lien , Jaw-Juinn Horng
Abstract: A noise detecting circuit including an amplifier circuit, a filtering circuit and a comparing circuit. The amplifier circuit is arranged to amplify an input signal and output an amplified signal, wherein the input signal is received from a circuit to be detected and indicates a noise level of the circuit to be detected. The filtering circuit is coupled to the amplifier circuit and arranged to filter the amplified signal and output a filtered signal. The comparing circuit is coupled to the filtering circuit and arranged to compare the filtered signal to a reference voltage and output an output signal indicating the noise level of the circuit to be detected.
-
公开(公告)号：US20220283601A1
公开(公告)日：2022-09-08
申请号：US17363142
申请日：2021-06-30
Inventor： Amit Kundu , Jaw-Juinn Horng
Abstract: Systems and methods are provided for generating a temperature compensated reference voltage. A temperature compensation circuit may include a proportional-to-absolute temperature (PTAT) circuit, and a complementary-to-absolute temperature (CTAT) circuit, with the PTAT circuit and the CTAT circuit including at least one common metal-oxide-semiconductor field-effect transistor (MOSFET) and being configured to collectively generate a reference voltage in response to a regulated current input. The PTAT circuit may be configured to produce an increase in magnitude of the reference voltage with an increase of temperature, and the CTAT circuit may be configured to generated a decrease in magnitude of the reference voltage with the increase of temperature, wherein the increase in magnitude of the reference voltage produced by the PTAT circuit is at least partially offset by the decrease in magnitude of the reference voltage produced by the CTAT circuit.
-
-
-
-
-
-
-
-
-
Search Results
100
records
(took 0.029 seconds)
