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1.发明申请公开(公告)号：US20080128833A1
公开(公告)日：2008-06-05
申请号：US11660925
申请日：2005-08-25
IPC分类号： H01L29/78 , C09D1/00 , H01L21/316
CPC分类号： H01L21/02181 , C23C16/308 , C23C16/40 , H01L21/02148 , H01L21/02178 , H01L21/02194 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/3141 , H01L21/3145 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A high-dielectric-constant film including hafnium, wherein the above-mentioned high-dielectric-constant film includes deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature. In a field-effect transistor provided with the high-dielectric-constant film including hafnium, the interface state density at the interface between a silicon substrate and a gate dielectric film decreases and carrier mobility in the gate dielectric film increases. In the present invention, a high-dielectric-constant constant second dielectric film, which is a thin film including hafnium such as HfSiON or HfAlOx and including deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature, is used as the gate dielectric film of the field-effect transistor.
摘要翻译： 包括铪的高介电常数膜，其中上述高介电常数膜包括比自然界中存在的氘与氢的比例高的氘。 在设置有包含铪的高介电常数膜的场效应晶体管中，硅衬底和栅极电介质膜之间的界面处的界面态密度降低，并且栅极电介质膜中的载流子迁移率增加。 在本发明中，高介电常数常数第二电介质膜是包括铪如HfSiON或HfAlO x x的薄膜，并且包含氘的比例高于氘与氢的比例 本质上是用作场效应晶体管的栅极电介质膜。
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公开(公告)号：US07268047B2
公开(公告)日：2007-09-11
申请号：US11357072
申请日：2006-02-21
IPC分类号： H01L21/336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜含有过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。 此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小 从这些界面，并成为高k电影中心部分中最低的。
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公开(公告)号：US20060138572A1
公开(公告)日：2006-06-29
申请号：US11357072
申请日：2006-02-21
IPC分类号： H01L21/8238
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜含有过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。 此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小 从这些界面，并成为高k电影中心部分中最低的。
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公开(公告)号：US07034369B2
公开(公告)日：2006-04-25
申请号：US10913551
申请日：2004-08-09
IPC分类号： H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜含有过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。 此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小 从这些界面，并成为高k电影中心部分中最低的。
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公开(公告)号：US20050249876A1
公开(公告)日：2005-11-10
申请号：US11034940
申请日：2005-01-14
申请人： Takaaki Kawahara , Kazuyoshi Torii
发明人： Takaaki Kawahara , Kazuyoshi Torii
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , H01L21/31 , H01L21/316 , H01L21/8238 , H01L27/092 , H01L29/78 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45531 , C23C16/45561 , C30B25/14
摘要： An atomic layer deposition (ALD) apparatus capable of forming a conformal ultrathin-film layer with enhanced step coverage is disclosed. The apparatus includes an ALD reactor supporting therein a wafer, and a main pipe coupled thereto for constant supply of a carrier gas. This pipe has two parallel branch pipes. Raw material sources are connected by three-way valves to one branch pipe through separate pipes, respectively. Similarly, oxidant/reducer sources are coupled by three-way valves to the other branch pipe via independent pipes. ALD works by introducing one reactant gas at a time into the reactor while being combined with the carrier gas. The gas is “chemisorped” onto the wafer surface, creating a monolayer deposited. During the supply of a presently selected material gas from its source to a corresponding branch pipe, this gas passes through its own pipe independently of the others. An ALD method is also disclosed.
摘要翻译： 公开了能够形成具有增强的阶梯覆盖层的保形超薄膜层的原子层沉积（ALD）装置。 该装置包括支撑晶片的ALD反应器和与其连接的主管以恒定地供应载气。 该管道有两根平行的支管。 原料源分别通过三通阀连接到一根分支管上。 类似地，氧化剂/还原剂源通过三通阀通过独立管道连接到另一支管。 ALD通过在与载气组合的同时将一个反应物气体一次引入反应器中起作用。 气体被“化学吸附”到晶片表面上，产生沉积的单层。 在将来自其源的目前选择的材料气体供应到相应的分支管道期间，该气体独立于其它管道通过其自身的管道。 还公开了一种ALD方法。
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公开(公告)号：US20050045970A1
公开(公告)日：2005-03-03
申请号：US10913551
申请日：2004-08-09
IPC分类号： C23C16/42 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L29/78 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜包含过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近和与栅电极的界面附近的过渡金属和铝的浓度。 此外，优选的是，至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着与这些界面的距离而逐渐减小，并且变得最低 在高k电影的中心部分。
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公开(公告)号：US20050051857A1
公开(公告)日：2005-03-10
申请号：US10901997
申请日：2004-07-30
IPC分类号： H01L21/316 , H01L21/28 , H01L21/336 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/28088 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device of the present invention comprises: a silicon substrate; a gate insulating film on the silicon substrate; and a gate electrode on the gate insulating film, wherein the gate insulating film includes: a first insulating film; a second insulating film on the first insulating film; and a metal nitride film on the second insulating film. The metal nitride film may be either AlN or Hf3N4. The metal nitride film may include nitrides of two or more different metals.
摘要翻译： 本发明的半导体器件包括：硅衬底; 硅基板上的栅极绝缘膜; 以及栅极绝缘膜上的栅极电极，其中所述栅极绝缘膜包括：第一绝缘膜; 第一绝缘膜上的第二绝缘膜; 和第二绝缘膜上的金属氮化物膜。 金属氮化物膜可以是AlN或Hf3N4。 金属氮化物膜可以包括两种或更多种不同金属的氮化物。
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公开(公告)号：US07087495B2
公开(公告)日：2006-08-08
申请号：US10796978
申请日：2004-03-11
申请人： Takaaki Kawahara , Kazuyoshi Torii
发明人： Takaaki Kawahara , Kazuyoshi Torii
IPC分类号： H01L21/336 , H01L21/8238
CPC分类号： H01L21/28194 , H01L21/28185 , H01L21/28202 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method for manufacturing a semiconductor device includes forming a first insulating film on a substrate, forming a second insulating film on the first insulating film, and forming a gate electrode on the second insulating film. Forming the second insulating film includes supplying film-forming materials and adsorbing the film-forming materials on the first insulating film, purging the film-forming materials that have not been adsorbed, supplying oxidants to oxidize the adsorbed film-forming materials, and purging the oxidants that have not contributed to oxidization. Forming the second insulating film is repeated in cycles, continuously, and the purging time of the oxidants in an initial number of the cycles is longer than the purging time of the oxidants in cycles following the initial number of cycles.
摘要翻译： 半导体器件的制造方法包括在基板上形成第一绝缘膜，在第一绝缘膜上形成第二绝缘膜，在第二绝缘膜上形成栅电极。 形成第二绝缘膜包括供给成膜材料并将成膜材料吸附在第一绝缘膜上，清洗未被吸附的成膜材料，供给氧化剂以氧化吸附的成膜材料，以及清洗 没有促进氧化的氧化剂。 循环连续地重复形成第二绝缘膜，并且初始循环次数中的氧化剂的清洗时间比初始循环次数之后的氧化剂的清洗时间长。
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公开(公告)号：US20100320542A1
公开(公告)日：2010-12-23
申请号：US12782457
申请日：2010-05-18
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823857 , H01L27/092
摘要： To improve the performance of a CMISFET having a high-k gate insulating film and a metal gate electrode. An n-channel MISFET has, over the surface of a p-type well of a semiconductor substrate, a gate electrode formed via a first Hf-containing insulating film serving as a gate insulating film, while a p-channel MISFET has, over the surface of an n-type well, another gate electrode formed via a second Hf-containing insulating film serving as a gate insulating film. These gate electrodes have a stack structure of a metal film and a silicon film thereover. The first Hf-containing insulating film is an insulating material film comprised of Hf, a rare earth element, Si, O, and N or comprised of Hf, a rare earth element, Si, and O, while the second Hf-containing insulating film is an insulating material film comprised of Hf, Al, O, and N or comprised of Hf, Al, and O.
摘要翻译： 为了提高具有高k栅极绝缘膜和金属栅电极的CMISFET的性能。 n沟道MISFET在半导体衬底的p型阱的表面上具有通过用作栅极绝缘膜的第一Hf绝缘膜形成的栅电极，而p沟道MISFET具有 n型阱的表面，通过用作栅极绝缘膜的第二Hf含量绝缘膜形成的另一个栅电极。 这些栅电极具有金属膜和其上的硅膜的堆叠结构。 第一含Hf绝缘膜是包括Hf，稀土元素，Si，O和N或由Hf，稀土元素，Si和O构成的绝缘材料膜，而第二Hf含量绝缘膜 是由Hf，Al，O和N组成或由Hf，Al和O构成的绝缘材料膜。
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公开(公告)号：US20100279496A1
公开(公告)日：2010-11-04
申请号：US12755058
申请日：2010-04-06
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857
摘要： To improve productivity and performance of a CMISFET including a high-dielectric-constant gate insulating film and a metal gate electrode. An Hf-containing insulating film for a gate insulating film is formed over the main surface of a semiconductor substrate. A metal nitride film is formed on the insulating film. The metal nitride film in an nMIS formation region where an n-channel MISFET is to be formed is selectively removed by wet etching using a photoresist pattern on the metal nitride films a mask. Then, a threshold adjustment film containing a rare-earth element is formed. The Hf-containing insulating film in the nMIS formation region reacts with the threshold adjustment film by heat treatment. The Hf-containing insulating film in a pMIS formation region where a p-channel MISFET is to be formed does not react with the threshold adjustment film because of the existence of the metal nitride film. Then, after removing the unreacted threshold adjustment film and the metal nitride film, metal gate electrodes are formed in the nMIS formation region and the pMIS formation region.
摘要翻译： 提高包括高介电常数栅极绝缘膜和金属栅电极在内的CMISFET的生产率和性能。 在半导体衬底的主表面上形成用于栅极绝缘膜的含Hf绝缘膜。 在绝缘膜上形成金属氮化物膜。 通过在金属氮化物膜上使用光刻胶图案的掩模，通过湿式蚀刻选择性地去除要形成n沟道MISFET的nMIS形成区域中的金属氮化物膜。 然后，形成含有稀土元素的阈值调节膜。 nMIS形成区域中的含Hf绝缘膜通过热处理与阈值调节膜反应。 由于存在金属氮化物膜，所以要形成p沟道MISFET的pMIS形成区域中的含Hf绝缘膜不会与阈值调节膜反应。 然后，在除去未反应的阈值调整膜和金属氮化物膜之后，在nMIS形成区域和pMIS形成区域中形成金属栅电极。
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