公开(公告)号：US20120251950A1

公开(公告)日：2012-10-04

申请号：US13516304

申请日：2010-12-06

申请人： Yusuke Horiguchi ,  Makiko Umezaki ,  Noriaki Fujitani ,  Hirokazu Nishimaki ,  Takahiro Kishioka ,  Takahiro Hamada

发明人： Yusuke Horiguchi ,  Makiko Umezaki ,  Noriaki Fujitani ,  Hirokazu Nishimaki ,  Takahiro Kishioka ,  Takahiro Hamada

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/091 ,  C08F12/24 ,  C08F212/14 ,  C08F220/56 ,  G03F7/038 ,  G03F7/30 ,  G03F7/322 ,  C08F2220/1858 ,  C08F220/58 ,  C08F2220/1891 ,  C08F2220/1833 ,  C08F2220/585

摘要： A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.

摘要翻译： 一种用于形成在光刻工艺中使用的抗蚀剂下层膜的组合物，其包括：含有式（1），式（2）和式（3）的单元结构的聚合物：聚合物是聚合物，其中单元 式（1）的结构的摩尔数（a）在0.20＆lt; 1EE的范围内; a＆nlE; 0.90，式（2）的单元结构的摩尔数（b）的比例在0.05＆lt; 1EE的范围内; （3）的单元结构，当构成聚合物的全部单元结构的总摩尔数为1.0时，其摩尔数（c）在0.001＆lt; 1lE; c＆nlE; 0.40的范围内， 聚合物，其重均分子量为3,000〜100,000; 可交联化合物; 光致酸发生器; 和溶剂。

公开(公告)号：US09436085B2

公开(公告)日：2016-09-06

申请号：US13516304

申请日：2010-12-06

申请人： Yusuke Horiguchi ,  Makiko Umezaki ,  Noriaki Fujitani ,  Hirokazu Nishimaki ,  Takahiro Kishioka ,  Takahiro Hamada

发明人： Yusuke Horiguchi ,  Makiko Umezaki ,  Noriaki Fujitani ,  Hirokazu Nishimaki ,  Takahiro Kishioka ,  Takahiro Hamada

IPC分类号： G03F7/09 ,  G03F7/30 ,  G03F7/32 ,  C08F12/24 ,  C08F212/14 ,  C08F220/56 ,  G03F7/038

CPC分类号： G03F7/091 ,  C08F12/24 ,  C08F212/14 ,  C08F220/56 ,  G03F7/038 ,  G03F7/30 ,  G03F7/322 ,  C08F2220/1858 ,  C08F220/58 ,  C08F2220/1891 ,  C08F2220/1833 ,  C08F2220/585

摘要： A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.

公开(公告)号：US20100291483A1

公开(公告)日：2010-11-18

申请号：US12676720

申请日：2008-09-18

申请人： Takahiro Hamada ,  Noriaki Fujitani

发明人： Takahiro Hamada ,  Noriaki Fujitani

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/11 ,  G03F7/0382 ,  G03F7/091

摘要： There is provided a resist underlayer film which does not intermix with a photoresist coated and formed as the overlying layer and which dissolves in an alkaline developer and can be developed and removed at the same time as the photoresist; and a resist underlayer film-forming composition for forming such a resist underlayer film. A resist underlayer film-forming composition for use in a lithographic process for manufacturing a semiconductor device, containing: (A) a branched polyhydroxystyrene in which an ethylene repeating unit on a polyhydroxystyrene moiety is bonded to a benzene ring on a different polyhydroxystyrene moiety; (B) a compound having at least two vinyl ether groups; and (C) a photoacid generator.

摘要翻译： 提供了抗蚀剂下层膜，其不与作为覆盖层涂布并形成的光致抗蚀剂混合，并溶解在碱性显影剂中，并可与光致抗蚀剂同时显影和除去; 和用于形成这种抗蚀剂下层膜的抗蚀剂下层膜形成组合物。 一种用于制造半导体器件的光刻工艺中的抗蚀剂下层膜形成组合物，其包含：（A）多羟基苯乙烯部分上的乙烯重复单元与不同的聚羟基苯乙烯部分上的苯环键合的支链多羟基苯乙烯; （B）具有至少两个乙烯基醚基团的化合物; 和（C）光致酸产生剂。

公开(公告)号：US20110117746A1

公开(公告)日：2011-05-19

申请号：US13054665

申请日：2009-07-23

申请人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

发明人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

IPC分类号： H01L21/31 ,  C09D183/04

CPC分类号： H01L21/02282 ,  C08G77/04 ,  C08G77/60 ,  C08L83/04 ,  G03F7/405 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/0337 ,  H01L21/3121 ,  H01L21/3122

摘要： It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom.

摘要翻译： 本发明的目的是提供适用于“反转图案化”并适用于形成覆盖抗蚀剂图案的膜的涂料组合物。 该目的通过一种用于光刻的涂料组合物来实现，该涂料组合物包含有机聚硅氧烷，含有规定的有机溶剂作为主要成分的溶剂，以及季铵盐或季鏻盐; 或用于光刻的涂料组合物，其包含聚硅烷，含有规定的有机溶剂作为主要成分的溶剂和至少一种选自交联剂，季铵盐，季鏻盐和磺酸盐的添加剂 酸化合物，其中聚硅烷在其末端具有硅烷醇基或硅烷醇基以及氢原子。

公开(公告)号：US20130230809A1

公开(公告)日：2013-09-05

申请号：US13884132

申请日：2011-11-11

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

IPC分类号： G03F7/00 ,  C08L67/04

CPC分类号： G03F7/00 ,  C08L67/04 ,  G03F7/11

摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

摘要翻译： 提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。 此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。 一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。

公开(公告)号：US09240327B2

公开(公告)日：2016-01-19

申请号：US14236719

申请日：2012-07-31

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

IPC分类号： G03F7/11 ,  H01L21/308 ,  H01L21/027 ,  C08G73/06 ,  G03F7/09

CPC分类号： H01L21/3081 ,  C08G73/06 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/3086

摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.

摘要翻译： 提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法 用于EUV光刻的抗蚀剂下层膜组合物。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基 ，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。

公开(公告)号：US20140170567A1

公开(公告)日：2014-06-19

申请号：US14236719

申请日：2012-07-31

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  Bangching Ho

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  C08G73/06 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/3086

摘要： There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.

摘要翻译： 提供了用于EUV光刻的抗蚀剂下层膜组合物，其用于使用EUV光刻的器件制造工艺，减少EUV的不利影响，并且对获得良好的抗蚀剂图案是有效的，以及形成使用的抗蚀剂图案的方法 用于EUV光刻的抗蚀剂下层膜组合物。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物：[其中A1，A2，A3，A4，A5和A6各自为氢原子，甲基 ，或乙基; X1是式（2），式（3），式（4）或式（0）：Q是式（5）或式（6）：和溶剂。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：具有式（1）的重复单元结构的聚合物; 可交联化合物; 和溶剂。

公开(公告)号：US08722840B2

公开(公告)日：2014-05-13

申请号：US13884132

申请日：2011-11-11

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

IPC分类号： G03F7/11 ,  C08L67/04

CPC分类号： G03F7/00 ,  C08L67/04 ,  G03F7/11

摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

摘要翻译： 提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。 此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。 一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。

公开(公告)号：US5071221A

公开(公告)日：1991-12-10

申请号：US388941

申请日：1989-08-03

申请人： Noriaki Fujitani ,  Kiichi Itoh ,  Kohji Kato

发明人： Noriaki Fujitani ,  Kiichi Itoh ,  Kohji Kato

IPC分类号： G02B6/44

CPC分类号： G02B6/4494

摘要： A water penetration preventive cable comprising an assembly of linear elements comprising a core wire in various forms and an optional linear tensile strength element, the assembly being covered with a sheath, characterized in that the linear elements and/or the sheath are wound with a water absorptive tape, and/or in that the gap between the linear elements and/or between the linear element and the sheath is filled with a linear water absorptive linear elements, wherein the water absorptive tape and water absorptive linear elements are made of a water absorptive polymer supported on a tape-like or linear support.