摘要:
Provided are a motion guide device and a screw device each having a cover for protecting the device against moisture, such as coolant, and powder dust. The motion guide device has a raceway member 11, a moving member main body 21 mounted on the raceway member 11 through a plurality of rolling elements and cap members 22 attached to respective end surfaces of the moving member main body 21 in a relative moving direction. A seal cover 50 is provided having a cover main body 51 that covers each of the cap members 22 and a seal section 55 that is provided between the cover main body 51 and a cap member-side end surface of the moving member main body 21 to stop a gap between the cap member-side end surface of the moving member main body 21 and the cover main body 51. This structure makes it possible to reliably prevent any foreign material, such as powder dust or swarf, and moisture, such as coolant, from getting into the inside of the moving member 20.
摘要:
(Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.
摘要:
A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.
摘要:
A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.
摘要:
A working machine engine is provided. The air flowing through the front side cooling air flow passage and the upper side cooling air flow passage which are provided in the front side and the upper side of the casing, respectively, and the air flowing through the auxiliary air flow passage provided in the back side of the casing join together near the opening. By this means, the air flowing through the auxiliary air flow passage can change the direction of the air flowing lengthwise through the front side cooling air flow passage and the upper side cooling air flow passage.
摘要:
To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.
摘要:
According to one embodiment, a semiconductor device including a field-effect transistor, and a resistance element connected between a gate electrode of the field effect transistor and a connection point connected between a back gate electrode of the field effect transistor and one of source-drain regions of the field effect transistor, a voltage being applied between the other of the source-drain regions and the gate electrode.
摘要:
A second blade-driving mechanism includes second blade-driving first member and second blade-driving second member, only the second blade-driving second member is rotated against elastic force of a blade-driving spring while the second blade-driving first member engages and is locked by a locking member at start of cocking operation of the cocking member to keep a second blade covering an exposure aperture, and the second blade-driving first member is disengaged from locking member at final stage of cocking operation, so the second blade-driving first member can be rotated by elastic force of a second blade-cocking spring and the second blade is made to open the exposure aperture. Staring cocking operation of a focal plane shutter is possible irrespective of the length of time during which imaging information can be transferred from an image sensor to storage via an information-processing circuit.
摘要:
Provided is an optical recording medium including, in sequence: a first substrate; a first information recording layer; an intermediate layer; a second information recording layer; and a second substrate having wobble convex portions on its surface, wherein information is recorded on or reproduced from the first information recording layer and second information recording layer by irradiation with a laser beam from a first information recording layer side, wherein the second information recording layer includes, over the second substrate, a light reflective layer, a dye recording layer, and an inorganic protective layer, wherein the inorganic protective layer has a thickness of 3 nm to 40 nm, and wherein the dye recording layer includes a cyanine compound expressed by General Formula (I) and a squarylium compound expressed by General Formula (II):
摘要:
A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.