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公开(公告)号：US06617606B2
公开(公告)日：2003-09-09
申请号：US09948701
申请日：2001-09-10
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L33/06 , H01L33/145
摘要： A light-emitting diode having an excellent high-speed response characteristic and capable of giving a large light output with a small variation of the light output during the operation is provided. In the light-emitting diode, an active layer comprising a single quantum well layer of p-type Ga0.51In0.49P, a lower barrier layer of p-type (Al0.5Ga0.5)0.51In0.49P and an upper barrier layer of p-type (Al0.5Ga0.5)0.51In0.49P is highly doped with p-type dopant (Zn, Mg, Be, C) or n-type dopant (Si, Se, Te) to produce non-radiative recombination level in the upper and lower barrier layers. Carriers injected into the quantum well layer not only recombine radiatively therein and also recombine nonradiatively at boundaries of the upper barrier layer and the lower barrier layer, remarkably increasing recombination velocity of carriers and dramatically improving the response characteristic.
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公开(公告)号：US07166865B2
公开(公告)日：2007-01-23
申请号：US10957614
申请日：2004-10-05
IPC分类号： H01L29/15
CPC分类号： H01L33/30 , H01L33/0079
摘要： There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layer 8 made of (AlyGa1−y)zIn1−zP (0≦y≦1, 0
摘要翻译： 以低成本和高产率提供和制造半导体发光器件，该半导体发光器件不仅可以从其顶表面而且从侧表面提取在发射极层中产生的光并且具有高亮度。 一种AlGaInP基半导体发光器件，其具有由（Al x Ga 1-x Y z）1 In 1中的接触层8制成的接触层8 设置在从发射极层3发射的波长透明的发射极层3和透明基板2之间的-z P（0 <= y <= 1,0
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公开(公告)号：US06501101B2
公开(公告)日：2002-12-31
申请号：US09883367
申请日：2001-06-19
IPC分类号： H01L3112
摘要： A light emitting diode comprising a multiple quantum well (MQW) layer as an active layer and a reflecting layer below the active layer, wherein the number and/or total thickness of well layers in the MQW layer is determined such that the MQW layer shows an external quantum efficiency higher than that of an MQW layer including a single well layer.
摘要翻译： 一种包括多量子阱（MQW）层作为有源层的发光二极管和在有源层下面的反射层，其中确定MQW层中的阱层的数量和/或总厚度，使得MQW层显示出 外部量子效率高于包含单一阱层的MQW层的外部量子效率。
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公开(公告)号：US20050093015A1
公开(公告)日：2005-05-05
申请号：US10957614
申请日：2004-10-05
IPC分类号： H01L21/00 , H01L21/205 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/0079
摘要： There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layer 8 made of (AlyGa1-y)zIn1-zP (0≦y≦1, 0
摘要翻译： 以低成本和高产率提供和制造半导体发光器件，该半导体发光器件不仅可以从其顶表面而且从侧表面提取在发射极层中产生的光并且具有高亮度。 一种AlGaInP基半导体发光器件，其具有由（Al x Ga 1-x Y z）1 In 1中的接触层8制成的接触层8 设置在从发射极层3发射的波长透明的发射极层3和透明基板2之间的-z P（0 <= y <= 1,0
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公开(公告)号：US06815727B2
公开(公告)日：2004-11-09
申请号：US10601755
申请日：2003-06-24
IPC分类号： H01L2906
CPC分类号： H01L33/105
摘要： A resonant cavity type light emitting diode has a first DBR made of n-type AlAs or Al0.5Ga0.5As, a quantum well active layer, a second DBR made of p-type (Al0.2Ga0.6)0.5In0.5P or Al0.5In0.5P, and an n-type current constriction layer on an n-type GaAs substrate. The first DBR and the second DBR form a resonator. The quantum well active layer is formed in a position of an antinode of a standing wave inside the resonator. Between the second DBR and the current constriction layer, there is provided a p-type GaP etching protection layer that has a value obtained by dividing resistivity by thickness being 1×103 &OHgr; or more. Since a current in a current flow pass formed in the current constriction layer hardly diffuses to the outside of the current flow pass, there is generated few region with low current density that causes deterioration of responsespeed in a quantum well layer. Thus, the light emitting diode has an excellent high-speed response.
摘要翻译： 谐振腔型发光二极管具有由n型AlAs或Al0.5Ga0.5As制成的第一DBR，量子阱活性层，由p型（Al 0.2 Ga 0.6）0.5 In 0.5 P制成的第二DBR或 Al 0.5 In 0.5 P，n型GaAs衬底上的n型电流收缩层。 第一DBR和第二DBR形成谐振器。 量子阱有源层形成在谐振器内的驻波的波腹的位置。 在第二DBR和电流收缩层之间，提供了一种p型GaP蚀刻保护层，其具有通过将电阻率除以1×10 -3Ω或更大的厚度获得的值。 由于形成在电流收缩层中的电流流动中的电流几乎不扩散到电流流通的外部，所以产生的电流密度低的区域导致量子阱层中的响应速度降低。 因此，发光二极管具有优异的高速响应。
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公开(公告)号：US07495263B2
公开(公告)日：2009-02-24
申请号：US09778045
申请日：2001-02-07
IPC分类号： H01L33/00 , H01L31/0328
摘要： On a GaAs substrate (1), are formed a DBR (Distributed Bragg Reflector) (3), and a light-emitting layer (5) made of a plurality of layers of AlyGazIn1-y-zP (0≦y≦1, 0≦z≦1) above the DBR (3). A semiconductor layer or a plurality of semiconductor layers (6)-(10) having a number of layers of 1 or more are formed on the light-emitting layer (5), and a grating pattern for scattering light is formed on a surface of the semiconductor layer (9) by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.
摘要翻译： 在GaAs衬底（1）上形成DBR（分布式布拉格反射器）（3）和由多层AlyGazIn1-y-zP（0≤y≤1）构成的发光层（5） ，0 <= z <= 1）。 在发光层（5）上形成有多个层数为1以上的半导体层或多个半导体层（6） - （10），在 半导体层（9）通过光刻法和用硫酸/过氧化氢腐蚀剂蚀刻。 因此，提供了发光波长的辐射角依赖性小的半导体器件及其制造方法。
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公开(公告)号：US06822266B2
公开(公告)日：2004-11-23
申请号：US10153874
申请日：2002-05-24
IPC分类号： H01L2715
摘要： A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall time is 2.1 nsec. Further, the single quantum well active layer is doped with Zn at a concentration of 8×1017 cm−3. Thereby, the half-value width of the light-emitting spectrum is 25 nm or more, which is wider than in the case of no doping. Thus, temperature dependence of an optical output is reduced.
摘要翻译： 半导体发光器件包括具有单量子阱结构的有源层。 单量子阱结构能够实现高速响应，使得上升和下降时间为2.1ns。 此外，单量子阱活性层以8×10 17 cm -3的浓度掺杂Zn。 因此，发光光谱的半值宽度为25nm以上，比不掺杂的情况宽。 因此，光输出的温度依赖性降低。
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8.发明申请Semiconductor light-emitting element, manufacturing method therefor and semiconductor device 审中-公开半导体发光元件及其制造方法和半导体器件公开(公告)号：US20050116309A1
公开(公告)日：2005-06-02
申请号：US10971688
申请日：2004-10-25
IPC分类号： H01L21/00 , H01L27/14 , H01L27/15 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/30 , H01L33/42 , H01L33/62
CPC分类号： H01L33/20 , H01L33/0079
摘要： A semiconductor light-emitting element has a semiconductor laminate including an active layer emitting light of a prescribed emission wavelength and a step located at an in-depth position beyond the active layer. The element also has a substrate transparent to the emission wavelength, a first electrode provided on a surface of the semiconductor laminate, and a second electrode provided on the step. The substrate transparent to the emission wavelength improves the external emission efficiency. The locations of the first and second electrodes substantially prevent current to flow through a direct connection interface between the semiconductor laminate and the substrate. Thereby, the element exhibits satisfactory electrical characteristics even when an incomplete junction attributed to hillock or the like is generated in the direct connection interface.
摘要翻译： 半导体发光元件具有包括发射规定发射波长的光的有源层和位于有源层之外的深度位置的台阶的半导体层叠体。 元件还具有对发射波长透明的基板，设置在半导体层叠体的表面上的第一电极和设置在该台阶上的第二电极。 对发射波长透明的衬底提高了外部发射效率。 第一电极和第二电极的位置基本上防止电流流过半导体层压体和衬底之间的直接连接界面。 因此，即使在直接连接界面中产生归因于小丘等的不完全连接，该元件也表现出令人满意的电特性。
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公开(公告)号：US06864514B2
公开(公告)日：2005-03-08
申请号：US10727723
申请日：2003-12-03
摘要： A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof.
摘要翻译： 至少具有AlGaInP发光层和透明电极的发光二极管，其中所述透明电极由掺杂有III族元素的ZnO膜或其化合物制成。
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10.发明授权Light emitting element with multiple multi-layer reflectors and a barrier layers 失效具有多个多层反射器和阻挡层的发光元件公开(公告)号：US06770915B2
公开(公告)日：2004-08-03
申请号：US10417193
申请日：2003-04-17
IPC分类号： H01L3300
CPC分类号： H01L33/105
摘要： In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga0.5In0.5P well layer and a pair of (Al0.5Ga0.5)0.5In0.5P barrier layers, which sandwiches the Ga0.5In0.5P well layer therebetween. The impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is higher than that of the Ga0.5In0.5P well layer. For example, the impurity concentration of the Ga0.5In0.5P well layer is set to 2×1016 cm−3, while the impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is set to 2×1018 cm−3.
摘要翻译： 在半导体发光元件中，在它们之间留有规定间隔的第一DBR和第二DBR形成谐振器，并且单个量子阱有源层位于该谐振器内的驻波环路处。 单量子阱有源层由Ga0.5In0.5P阱层和一对（Al0.5Ga0.5）0.5In0.5P势垒层组成，它们之间夹着Ga0.5In0.5P阱层。 （Al0.5Ga0.5）0.5In0.5P阻挡层的杂质浓度高于Ga0.5In0.5P阱层的杂质浓度。 例如，Ga0.5In0.5P阱层的杂质浓度设定为2×10 16 cm -3，而（Al 0.5 Ga 0.5）0.5 In 0.5 P阻挡层的杂质浓度设定为 2×10 18 cm -3。
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