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    Semiconductor substrate and device with a surface layer structure
    1.
    发明授权
    Semiconductor substrate and device with a surface layer structure 失效
    具有表面层结构的半导体衬底和器件

    公开(公告)号：US5396082A

    公开(公告)日：1995-03-07

    申请号：US205771

    申请日：1994-03-04

    申请人： Yoshinori Wada ,  Kazumi Wada ,  Takahisa Ohno

    发明人： Yoshinori Wada ,  Kazumi Wada ,  Takahisa Ohno

    IPC分类号： H01L29/205 ,  H01L29/161

    CPC分类号： H01L29/205

    摘要： The semiconductor device has a semiconductor substrate composed essentially of a III-V compound semiconductor containing Ga and As, and a surface layer structure provided on the semiconductor substrate and this layer has a composition different from that of the semiconductor substrate. The surface layer structure includes a strained layer epitaxially grown on the surface of the semiconductor substrate and composed essentially of at least one-element selected from the group consisting of indium, gallium, aluminum and boron, and at least one element selected from the group consisting of arsenic and phosphorus. The strained layer has a composition different from that of the semiconductor substrate The strained layer has a valence band maximum lower in energy than that of the valence band maximum of the semiconductor substrate.

    摘要翻译： 半导体器件具有基本上由包含Ga和As的III-V族化合物半导体构成的半导体衬底以及设置在半导体衬底上的表面层结构，该层具有不同于半导体衬底的组成。 表面层结构包括外延生长在半导体衬底的表面上并且基本上由选自铟，镓，铝和硼的至少一种元素组成的应变层，以及至少一种选自以下的元素： 的砷和磷。 应变层具有与半导体衬底的组成不同的组成。应变层具有与半导体衬底的价带最大值的能量最低的价带。

    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
    2.
    发明申请
    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD 审中-公开
    半导体波导和半导体波形制造方法

    公开(公告)号：US20110006399A1

    公开(公告)日：2011-01-13

    申请号：US12810989

    申请日：2008-12-26

    申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L21/02516 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/267 ,  H01L29/7371

    摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer.

    摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括单晶Si晶片的半导体晶片; 绝缘层，其具有开放区域并形成在所述晶片上; 在开放区域中在晶片上外延生长的Ge层; 以及在所述Ge层上外延生长的GaAs层，其中，所述Ge层通过以下方式形成：（i）将所述晶片放置在可产生超高真空低压状态的CVD反应室中，（ii） 在原料气体可以热分解的第一温度下外延生长，（iii）在高于第一温度的第二温度下进行第二外延生长，（iv）在损失的第三温度下进行第一退火 比在第一和第二外延生长形成的外延层上的熔点高的Ge，和（v）在低于第三温度的第四温度下进行第二次退火。 可以通过重复第一退火和第二退火多次形成Ge层，并且绝缘层可以是氧化硅层。

    Low voltage tunable photonic crystal with large defects as wavelength routing
    5.
    发明授权
    Low voltage tunable photonic crystal with large defects as wavelength routing 有权
    具有较大缺陷的低电压可调光子晶体作为波长路由

    公开(公告)号：US06859321B2

    公开(公告)日：2005-02-22

    申请号：US10402504

    申请日：2003-03-28

    申请人： Lionel C. Kimerling ,  Kazumi Wada ,  Yasha Yi

    发明人： Lionel C. Kimerling ,  Kazumi Wada ,  Yasha Yi

    IPC分类号： G02B6/122 ,  G02B6/34 ,  G02B26/00 ,  H01S5/183 ,  G02B27/00

    CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B26/001

    摘要： A photonic bandgap device includes a first mirror region including alternating layers of different materials. A second mirror region includes alternating layers of different materials. An air gap cavity region is positioned between the first mirror region and second region. The air gap cavity changes its thickness when a voltage is applied so that the device is tuned to a particular resonant wavelength.

    摘要翻译： 光子带隙装置包括包括不同材料的交替层的第一反射镜区域。 第二镜面区域包括不同材料的交替层。 气隙腔区域位于第一反射镜区域和第二区域之间。 当施加电压时，气隙腔改变其厚度，使得器件被调谐到特定的谐振波长。

    Low-loss waveguide and method of making same
    6.
    发明授权
    Low-loss waveguide and method of making same 有权
    低损耗波导及其制造方法

    公开(公告)号：US06850683B2

    公开(公告)日：2005-02-01

    申请号：US09876392

    申请日：2001-06-07

    申请人： Kevin K. Lee ,  Desmond R. Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    发明人： Kevin K. Lee ,  Desmond R. Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B6/10

    CPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B2006/12176

    摘要： A method of reducing the scattering losses that involves smoothing of the core/cladding interface and/or change of waveguide geometry in high refractive index difference waveguides. As an example, the SOI-based Si/SiO2 waveguides are subjected to an oxidation reaction at high temperatures, after the waveguide patterning process. By oxidizing the rough silicon core surfaces after the patterning process, the core/cladding interfaces are smoothened, reducing the roughness scattering in waveguides.

    摘要翻译： 降低散射损耗的方法，其涉及在高折射率差分波导中平滑芯/包层界面和/或波导几何形状的变化。 作为示例，在波导图案化工艺之后，SOI基Si / SiO 2波导在高温下经受氧化反应。 通过在图案化处理之后氧化粗糙的硅芯表面，使芯/包层界面平滑化，减少波导中的粗糙度散射。

    Deposit metal welding method
    7.
    发明授权
    Deposit metal welding method 失效
    沉积金属焊接方法

    公开(公告)号：US06805276B2

    公开(公告)日：2004-10-19

    申请号：US10143558

    申请日：2002-05-10

    申请人： Kazumi Wada

    发明人： Kazumi Wada

    IPC分类号： B23K3102

    CPC分类号： E01B29/42 ,  B23K23/00 ,  Y10T428/12493

    摘要： To prevent decreases in fatigue strength of a base material by relieving the residual stress of a weld. A method for welding a deposit metal to a base material with reduced residual stress, comprising a step of welding a deposit metal to a base material; and a step of plastically deforming into a recess, an area on the surface of the base material around a peripheral portion of the deposit metal. The invention is also directed to a welded block joint between a wire and a base material, characterized by comprising a deposit metal receiving an end portion of the wire and welded to the base material, wherein an area which is plastically deformed into a recess is formed on the base material surface at a peripheral portion of the deposit metal.

    摘要翻译： 通过减轻焊接的残余应力来防止基材的疲劳强度降低。 一种用于将沉积金属焊接到具有降低的残余应力的基底材料的方法，包括将沉积金属焊接到基底材料的步骤; 以及将金属表面周围的基材表面的区域塑性变形为凹陷的步骤。 本发明还涉及一种电线和基材之间的焊接块接头，其特征在于，包括一个沉积金属，其接收该电线的端部并焊接到该基底材料上，其中形成塑性变形成凹槽的区域 在沉积金属的周边部分的基材表面上。

    Light emitting device
    9.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08472489B2

    公开(公告)日：2013-06-25

    申请号：US12678953

    申请日：2008-09-18

    申请人： Kazumi Wada ,  Shiyun Lin ,  Yosuke Kobayashi ,  Peng Huei Lim

    发明人： Kazumi Wada ,  Shiyun Lin ,  Yosuke Kobayashi ,  Peng Huei Lim

    IPC分类号： H01S5/00 ,  H01S3/08 ,  H01S3/083

    CPC分类号： H01S5/1071 ,  H01S5/021 ,  H01S5/1032 ,  H01S5/1075 ,  H01S5/12 ,  H01S5/3224

    摘要： A light-emitting device having a ring optical resonator and capable of laser oscillation by a novel structure realized by working out the mechanism of light emission. The light-emitting device having a ring optical resonator fabricated on a base is characterized in that the optical resonator has a core made of a semiconductor and serving to propagate light and a clad formed on at least the base side of the core in the stack direction out of the base side and the opposite side of the core, at least the ring inner and outer peripheral surfaces of the core are covered with a transparent body having an index of refraction lower than that of the space or the clad, and a part of the ring inner and outer peripheral surfaces of the clad are covered with a transparent body having an index of refraction lower than that of the space or the clad.

    摘要翻译： 一种具有环形光学谐振器并且能够通过实现发光机制而实现的新颖结构的激光振荡的发光器件。 具有在基底上制造的环形光学谐振器的发光器件的特征在于，光谐振器具有由半导体制成的并且用于传播光的芯和在堆叠方向上至少形成在芯的基极侧的包层 在芯的基部侧和相对侧之外，至少芯的环内周表面和外周表面被折射率低于空间或包层的透明体覆盖，并且部分 包层的环内外表面被折射率低于空间或包层的折射率的透明体覆盖。

    SILICON SOLAR CELL
    10.
    发明申请
    SILICON SOLAR CELL 审中-公开
    硅太阳能电池

    公开(公告)号：US20110030779A1

    公开(公告)日：2011-02-10

    申请号：US12866185

    申请日：2009-02-03

    申请人： Kazumi Wada ,  Ryuzo Ichikawa

    发明人： Kazumi Wada ,  Ryuzo Ichikawa

    IPC分类号： H01L31/0216

    CPC分类号： H01L31/1804 ,  H01L31/028 ,  H01L31/0547 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： A silicon solar cell includes a silicon substrate (10) having a p-n junction structure fabricated by forming an n-type silicon substrate an a p-type silicon substrate by n-type impurity diffusion. The silicon substrate (10) contains multiple diffusing bodies (12) diffusing incident light (11) in all directions as shown by arrows (11a to 11g). Since the diffuse light beams travel along the light-receiving surface (10a) at long distances, the lengths that the light beams travel are long accordingly, and the light absorption is enhanced. Even holes (pipe-like holes) formed in the light-receiving surface (10a) of the silicon substrate (10) formed after the anodization step enhance the light internal persistence rate higher than that of conventional silicon substrates like silicon substrates (10) containing air balls (12). The silicon substrate exhibiting a light internal persistence rate approximate to those of silicon substrates containing air balls can be fabricated by a simpler manufacturing method without any annealing step.

    摘要翻译： 硅太阳能电池包括通过n型杂质扩散形成p型硅衬底而形成n型硅衬底而形成p-n结结构的硅衬底（10）。 硅衬底（10）如箭头（11a至11g）所示，包含沿着所有方向扩散入射光（11）的多个漫射体（12）。 由于漫射光束长距离地沿着受光面（10a）行进，所以光束行进的长度相应地长，并且光吸收增强。 形成在阳极氧化步骤之后形成的硅衬底（10）的光接收表面（10a）中的均匀孔（管状孔）比常规硅衬底（例如硅衬底（10））的光内部持续速率高， 空气球（12）。 表现出与内含空气球的硅基板接近的光内部持续率的硅基板可以通过简单的制造方法制造而无需任何退火步骤。