公开(公告)号：US09231370B2

公开(公告)日：2016-01-05

申请号：US13453743

申请日：2012-04-23

申请人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

发明人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

IPC分类号： H01S5/042 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

公开(公告)号：US08953656B2

公开(公告)日：2015-02-10

申请号：US13354053

申请日：2012-01-19

申请人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

发明人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/02 ,  H01S5/10 ,  H01S5/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

公开(公告)号：US08507305B2

公开(公告)日：2013-08-13

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US08741674B2

公开(公告)日：2014-06-03

申请号：US13335560

申请日：2011-12-22

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00 ,  H01L21/8252

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/3202 ,  H01S2301/14

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。 第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。 在激光结构中，第一表面与第二表面相对。 第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。 断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

公开(公告)号：US20120258557A1

公开(公告)日：2012-10-11

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L33/62

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US08420419B2

公开(公告)日：2013-04-16

申请号：US13404310

申请日：2012-02-24

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性 主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域将基板产品分解，形成另一基板产品和激光条 。

公开(公告)号：US08139619B2

公开(公告)日：2012-03-20

申请号：US13209054

申请日：2011-08-12

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202

摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.

摘要翻译： 提供了具有激光腔的III族氮化物半导体激光器件，其能够在六边形III族氮化物的半极性表面上实现低阈值电流，以及稳定地制造III族氮化物半导体激光器件的方法。 在位于III族氮化物半导体激光装置11的阳极侧的第一表面13a的四个相应的角部处形成缺口，例如凹口113a等。凹口113a等是设置在划线槽中的一部分 用于分离设备11.划线槽由激光划线器形成，并且通过控制激光划线机来调节划线槽的形状。 例如，凹口113a的深度等于III族氮化物半导体激光器件11的厚度的比率不小于0.05且不大于0.4，则侧壁表面的端部的倾斜度 凹口113a不小于45°并且不大于85°，并且凹口113b的端部处的侧壁表面的倾斜度不小于10°并且不大于30°。

公开(公告)号：US08105857B2

公开(公告)日：2012-01-31

申请号：US12837306

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/18

CPC分类号： H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32341

摘要： A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：形成具有激光结构的衬底产品; 划定衬底产品的第一表面以形成刻痕，其沿着表示六边形III族氮化物半导体的a轴的方向的参考线延伸在第一表面上，划线标记; 将所述基板产品安装在断开装置上以分别通过所述断路装置的第一和第二支撑部分支撑所述基板产品的第一和第二区域; 并且在不支撑位于第一和第二区域之间的基板产品的第三区域的情况下，在第三区域中通过压制与基板标记对准地分解基板产品，以形成另一基板产品和激光条。 激光棒的第一和第二端面形成III族氮化物半导体激光器件的激光腔。

公开(公告)号：US08548020B2

公开(公告)日：2013-10-01

申请号：US12837291

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

摘要： A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.

公开(公告)号：US08361885B2

公开(公告)日：2013-01-29

申请号：US13300220

申请日：2011-11-18

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  G01N21/62 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/34333

摘要： A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制造III族氮化物半导体激光器件的方法包括：制备包括六方晶III-III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括半导体区域和所述基板，其中所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上刻划基板产品的第一表面以形成第一和第二划线槽; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。