公开(公告)号：US5214840A

公开(公告)日：1993-06-01

申请号：US550698

申请日：1990-07-10

申请人： Takao Imagawa ,  Masaaki Sano ,  Katsuya Mitsuoka ,  Kouichi Nishioka ,  Shinji Narishige ,  Tetsuo Kobayashi

发明人： Takao Imagawa ,  Masaaki Sano ,  Katsuya Mitsuoka ,  Kouichi Nishioka ,  Shinji Narishige ,  Tetsuo Kobayashi

IPC分类号： G11B5/31

CPC分类号： G11B5/3163 ,  G11B5/3113 ,  Y10T29/49034

摘要： A method of fabricating a thin film magnetic head including a bottom magnetic core formed on a substrate, a top magnetic core laminated through an insulation layer, with one end of the top and bottom magnetic cores being joined and another end forming a magnetic gap, and a conductor coil layer which winds around the joined section for a plurality of number of turns. At least one of the top and bottom magnetic cores has its magnetization easy axis oriented substantially orthogonal to the magnetic path direction of the magnetic head by the magnetic annealing process, so that the magnetic head has an increased output and an enhanced write ability.

摘要翻译： 一种制造薄膜磁头的方法，该薄膜磁头包括形成在基板上的底部磁芯，通过绝缘层层压的顶部磁芯，顶部和底部磁芯的一端接合，另一端形成磁隙， 导体线圈层绕着连接部分缠绕多个匝数。 顶部和底部磁芯中的至少一个通过磁性退火处理使其磁化容易轴定向为基本上垂直于磁头的磁路方向，从而磁头具有增加的输出和增强的写入能力。

公开(公告)号：US5051856A

公开(公告)日：1991-09-24

申请号：US420478

申请日：1989-10-12

申请人： Shinji Narishige ,  Katsuya Mitsuoka ,  Takao Imagawa ,  Kouichi Nishioka ,  Akira Kumagai ,  Masaaki Sano ,  Yutaka Sugita ,  Reiko Arai ,  Tetsuo Kobayashi ,  Toshihiro Yoshida ,  Yokuo Saitoh ,  Yoshikazu Tsuji ,  Masaaki Hayashi

发明人： Shinji Narishige ,  Katsuya Mitsuoka ,  Takao Imagawa ,  Kouichi Nishioka ,  Akira Kumagai ,  Masaaki Sano ,  Yutaka Sugita ,  Reiko Arai ,  Tetsuo Kobayashi ,  Toshihiro Yoshida ,  Yokuo Saitoh ,  Yoshikazu Tsuji ,  Masaaki Hayashi

IPC分类号： G11B5/31 ,  H01F10/32

CPC分类号： B82Y25/00 ,  G11B5/31 ,  H01F10/32

摘要： A thin film magnetic head has magnetic films, at least one of which is composed of a material containing major components of nickel and iron and one or more element from nitrogen, oxygen and carbon and has two of face-centered cubic system and body-centered tetragonal system, whereby thin film magnetic heads having a high permeability and low coercive force can be provided.

摘要翻译： 薄膜磁头具有磁性膜，其中至少一个由含有镍和铁的主要成分的材料和来自氮，氧和碳的一种或多种元素组成，并且具有两个面心立方体系和以身体为中心 可以提供具有高磁导率和低矫顽力的薄膜磁头。

公开(公告)号：US4939610A

公开(公告)日：1990-07-03

申请号：US252603

申请日：1988-10-03

申请人： Shinji Narishige ,  Masaaki Sano ,  Kouichi Nishioka ,  Takao Imagawa ,  Masanobu Hanazono ,  Tetsuo Kobayashi ,  Toshihiro Yoshida

发明人： Shinji Narishige ,  Masaaki Sano ,  Kouichi Nishioka ,  Takao Imagawa ,  Masanobu Hanazono ,  Tetsuo Kobayashi ,  Toshihiro Yoshida

IPC分类号： G11B5/31 ,  H01F41/18

CPC分类号： H01F41/18 ,  G11B5/31

摘要： A thin film magnetic head is disclosed which includes a substrate, a first magnetic core disposed on the substrate, a second magnetic core forming a magnetic path in conjunction with the first magnetic core, a conductor coil wound in the magnetic path and a gap formed between ends of the first magnetic core and the second magnetic core. At least one of the first magnetic core and the second magnetic core includes a thin film of a cobalt alloy. The cobalt alloy includes 20-70 atomic percent of cobalt, 20-60 atomic percent of nickel, 12-30 atomic percent of iron and 5-32 atomic percent of palladium.

摘要翻译： 公开了一种薄膜磁头，其包括基板，设置在基板上的第一磁芯，与第一磁芯一起形成磁路的第二磁芯，缠绕在磁路中的导体线圈和形成在磁路之间的间隙 第一磁芯和第二磁芯的端部。 第一磁芯和第二磁芯中的至少一个包括钴合金薄膜。 钴合金包括20-70原子％的钴，20-60原子％的镍，12-30原子％的铁和5-32原子百分比的钯。

公开(公告)号：US4943883A

公开(公告)日：1990-07-24

申请号：US266080

申请日：1988-11-02

申请人： Masaaki Sano ,  Takao Imagawa ,  Kouichi Nishioka ,  Shinji Narishige ,  Masanobu Hanazono ,  Takashi Onishi ,  Toshihiro Yoshida

发明人： Masaaki Sano ,  Takao Imagawa ,  Kouichi Nishioka ,  Shinji Narishige ,  Masanobu Hanazono ,  Takashi Onishi ,  Toshihiro Yoshida

IPC分类号： G11B5/31

CPC分类号： G11B5/3109

摘要： A thin film magnetic head provided with a first and a second thin film made of a magnetic material, disposed so as to form a closed magnetic circuit; and an intermediate film made of a non-magnetic material, disposed between the first and the second thin films so as to form a magnetic gap at a part of the magnetic circuit; wherein at least one of the first and the second thin films is made of a quaternary amorphous magnetic alloy, whose principal component is cobalt and which contains hafnium, tantalum and palladium.

摘要翻译： 一种薄膜磁头，其设置有由磁性材料制成的第一和第二薄膜，被设置成形成闭合磁路; 以及由非磁性材料制成的中间膜，设置在第一和第二薄膜之间，以在磁路的一部分形成磁隙; 其中所述第一和第二薄膜中的至少一个薄膜由主要成分为钴并含有铪，钽和钯的四元非晶磁性合金制成。

公开(公告)号：US5436777A

公开(公告)日：1995-07-25

申请号：US941248

申请日：1992-09-04

申请人： Susumu Soeya ,  Shigeru Tadokoro ,  Takao Imagawa ,  Eiji Ashida ,  Moriaki Fuyama ,  Shinji Narishige ,  Kouichi Nishioka

发明人： Susumu Soeya ,  Shigeru Tadokoro ,  Takao Imagawa ,  Eiji Ashida ,  Moriaki Fuyama ,  Shinji Narishige ,  Kouichi Nishioka

IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/398 ,  G11B5/399 ,  G11B2005/0016 ,  G11B5/3113 ,  G11B5/313

摘要： A magnetoresistive head has a substrate (1) and, on the substrate, a magnetoresistive film (40) for converting a magnetic signal into an electric signal by using magnetoresistance effects and a pair of electrodes (60) for causing a signal detection current to flow through the magnetoresistive film. A pair of first domain wall suppressing layers (30) are arranged at opposite end portions of the magnetoresistive film, respectively, to apply a longitudinal magnetic bias to the magnetoresistive film. A second domain wall suppressing layer (45) is also provided for applying a longitudinal magnetic bias, which is weaker compared with the longitudinal magnetic bias applied by the first domain wall suppressing layers, to the magnetoresistive film (40).

摘要翻译： 磁阻头具有衬底（1），并且在衬底上具有用于通过使用磁阻效应将磁信号转换为电信号的磁阻膜（40）和用于使信号检测电流流动的一对电极（60） 通过磁阻膜。 一对第一畴壁抑制层（30）分别布置在磁阻膜的相对端部，以将纵向磁偏压施加到磁阻膜。 还提供了第二畴壁抑制层（45），用于施加与由第一畴壁抑制层施加的纵向磁偏压相比较对磁阻膜（40）较弱的纵向磁偏压。

公开(公告)号：US5327313A

公开(公告)日：1994-07-05

申请号：US922472

申请日：1992-07-31

申请人： Kouichi Nishioka ,  Shigeru Tadokoro ,  Shinji Narishige

发明人： Kouichi Nishioka ,  Shigeru Tadokoro ,  Shinji Narishige

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3932 ,  G11B5/3903

摘要： A magnetoresistance effect type head including a ceramic substrate, a first magnetic film provided on the ceramic substrate, a second magnetic film provided above the first magnetic film, first and second insulating films provided between the first and second magnetic films, a magnetoresistance effect type film provided between the first and second insulating films, a bias film provided between the first and second insulating films in contact with the magnetoresistive film for applying magnetic field to the magnetoresistive film, a first conductive film provided between the first and second insulating films and above the bias film to be nearly as thick as the mean free path of free electrons, and a second conductive film of an electrode structure mutually separated between the first and second insulating films in contact with the first conductive film. The first conductive film is a nickel-chromium film or a chromium film which is resistive to a fluorocarbon-series gas to be used for etching. The second conductive film is made of a metal which is etched with a fluorocarbon-series gas and which has a thickness of 200 nm or more. The bias film and the magnetoresistance effect type film are protected from over-etching. The second conductive layer is made up of two metallic layers having contact tightness with the second insulating film and a third metallic layer which is sandwiched between the two metallic layers and which has a conductivity larger than the two metallic layers and also a thickness larger than the two metallic layers.

摘要翻译： 一种磁阻效应型头，包括陶瓷基板，设置在陶瓷基板上的第一磁性膜，设置在第一磁性膜上方的第二磁性膜，设置在第一和第二磁性膜之间的第一和第二绝缘膜，磁阻效应型膜 设置在所述第一绝缘膜和所述第二绝缘膜之间的偏置膜，设置在与所述磁阻膜接触的所述第一和第二绝缘膜之间用于对所述磁阻膜施加磁场的偏置膜，设置在所述第一绝缘膜和所述第二绝缘膜之间的第一导电膜， 偏置膜几乎与自由电子的平均自由程相同，以及在与第一导电膜接触的第一和第二绝缘膜之间相互分离的电极结构的第二导电膜。 第一导电膜是耐蚀刻用氟碳系气体的镍铬膜或铬膜。 第二导电膜由用碳氟化合物系列气体蚀刻并且厚度为200nm以上的金属制成。 保护偏置膜和磁阻效应型膜免受过蚀刻。 第二导电层由与第二绝缘膜具有接触紧密度的两个金属层和夹在两个金属层之间的导电率大于第二绝缘膜的第三金属层构成，并且具有比两个金属层更大的导电性， 两层金属层。

公开(公告)号：US20050162786A1

公开(公告)日：2005-07-28

申请号：US10977324

申请日：2004-10-29

申请人： Kenichi Meguro ,  Kouichi Nishioka ,  Masahiko Hatatani ,  Chiseki Haginoya

发明人： Kenichi Meguro ,  Kouichi Nishioka ,  Masahiko Hatatani ,  Chiseki Haginoya

IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC分类号： G11B5/3912 ,  G11B5/3932

摘要： A magnetoresistive head and a fabricating method thereof accomplishing high sensitivity and low noise are provided even if track width narrowing makes progress. In one embodiment, a pinned layer includes a laminate which includes at least two magnetic layers and where adjacent magnetic layers are coupled antiferromagnetically to each other, and a mechanism to apply a longitudinal biasing field to a free layer is made to function by laminating a nonmagnetic separate layer/longitudinal biasing layer/antiferromagnetic layer connecting the free layer and opposite a nonmagnetic conductive layer (or nonmagnetic tunneling barrier layer). Controlling a magnetization direction of the longitudinal biasing layer which bears application of a longitudinal biasing field to the pinned layer and free layer is achieved by annealing carried out while applying a magnetic field in a track width direction and applying a magnetic field at room temperature.

摘要翻译： 即使进行轨道宽度变窄，也提供了实现高灵敏度和低噪声的磁阻头及其制造方法。 在一个实施例中，钉扎层包括层压体，其包括至少两个磁性层，并且其中相邻磁性层彼此反铁磁耦合，并且通过层叠非磁性的作用将纵向偏置场施加到自由层 连接自由层并且与非磁性导电层（或非磁性隧道势垒层）相对的单独层/纵向偏置层/反铁磁性层。 通过在轨道宽度方向施加磁场并在室温下施加磁场的同时进行退火来控制施加纵向偏置场的纵向偏置层的磁化方向到被钉扎层和自由层。

公开(公告)号：US07370404B2

公开(公告)日：2008-05-13

申请号：US10857168

申请日：2004-05-28

申请人： Hardayal Singh Gill ,  Jinshan Li ,  Kenneth Donald Mackay ,  Kouichi Nishioka ,  Andy Cuong Tran

发明人： Hardayal Singh Gill ,  Jinshan Li ,  Kenneth Donald Mackay ,  Kouichi Nishioka ,  Andy Cuong Tran

IPC分类号： G11B5/127

CPC分类号： G11B5/3903 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

摘要翻译： 读头中的自旋阀传感器具有位于自固定AP钉扎层结构和自由层结构之间的间隔层。 自由层结构通过邻接自旋阀传感器的第一和第二侧表面的第一和第二硬偏压层纵向稳定。 AP钉扎层结构具有位于第一和第二AP钉扎层（AP 1）和（AP 2）之间的反平行耦合层（APC）。 本发明采用了一种复位过程，用于通过在与传感器的各层的主平面平行的平面中对头表面施加锐角的场来设定AP钉扎层的磁矩。 复位过程设置每个AP固定层的正确极性，极性符合与自旋阀传感器一起使用的处理电路。

公开(公告)号：US08568602B2

公开(公告)日：2013-10-29

申请号：US13009738

申请日：2011-01-19

申请人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

发明人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/08

摘要： A method for manufacturing a magnetic sensor that decreases area resistance and decreases MR ratio of the sensor by eliminating any oxide formation in the capping layer of the sensor. The method includes forming a sensor stack having a multi-layer capping structure formed there-over. The multi-layer capping structure can include first, second, third and fourth layers. The second layer is constructed of a material that is not easily oxidized and which is different from the first layer. The sensor can be formed using a mask that includes a carbon hard mask. After the sensor stack has been formed by ion milling, the hard mask can be removed by reactive ion etching. Then, a cleaning process is performed to remove the second, third and fourth layers of the capping layer structure using an end point detection method such as secondary ion mass spectrometry to detect the presence of the second layer.

摘要翻译： 一种制造磁传感器的方法，其通过消除传感器的覆盖层中的任何氧化物形成来降低传感器的面积电阻并降低MR比。 该方法包括形成其上形成有多层封盖结构的传感器堆叠。 多层封盖结构可以包括第一层，第二层，第三层和第四层。 第二层由不容易氧化并且不同于第一层的材料构成。 传感器可以使用包括碳硬掩模的掩模形成。 在通过离子铣削形成传感器堆叠之后，可以通过反应离子蚀刻去除硬掩模。 然后，使用诸如二次离子质谱法的终点检测方法来进行清洁处理以去除覆盖层结构的第二层，第三层和第四层，以检测第二层的存在。

公开(公告)号：US20120184053A1

公开(公告)日：2012-07-19

申请号：US13009738

申请日：2011-01-19

申请人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

发明人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

IPC分类号： H01L21/02

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/08

摘要： A method for manufacturing a magnetic sensor that decreases area resistance and decreases MR ratio of the sensor by eliminating any oxide formation in the capping layer of the sensor. The method includes forming a sensor stack having a multi-layer capping structure formed there-over. The multi-layer capping structure can include first, second, third and fourth layers. The second layer is constructed of a material that is not easily oxidized and which is different from the first layer. The sensor can be formed using a mask that includes a carbon hard mask. After the sensor stack has been formed by ion milling, the hard mask can be removed by reactive ion etching. Then, a cleaning process is performed to remove the second, third and fourth layers of the capping layer structure using an end point detection method such as secondary ion mass spectrometry to detect the presence of the second layer.

摘要翻译： 一种制造磁传感器的方法，其通过消除传感器的覆盖层中的任何氧化物形成来降低传感器的面积电阻并降低MR比。 该方法包括形成其上形成有多层封盖结构的传感器堆叠。 多层封盖结构可以包括第一层，第二层，第三层和第四层。 第二层由不容易氧化并且不同于第一层的材料构成。 传感器可以使用包括碳硬掩模的掩模形成。 在通过离子铣削形成传感器堆叠之后，可以通过反应离子蚀刻去除硬掩模。 然后，使用诸如二次离子质谱法的终点检测方法来进行清洁处理以去除覆盖层结构的第二层，第三层和第四层，以检测第二层的存在。