公开(公告)号：US20070207381A1

公开(公告)日：2007-09-06

申请号：US11703210

申请日：2007-02-07

申请人： Takashi Ohtsuka ,  Sumihito Ishida ,  Hiroaki Matsuda

发明人： Takashi Ohtsuka ,  Sumihito Ishida ,  Hiroaki Matsuda

IPC分类号： H01M4/58 ,  C01B33/04

CPC分类号： H01M4/58 ,  H01M4/13 ,  H01M4/139 ,  H01M4/366 ,  H01M4/485 ,  H01M4/625 ,  H01M10/052 ,  H01M2004/027

摘要： A negative-electrode active material for nonaqueous electrolyte secondary battery, comprising a silicon compound capable of inserting and extracting lithium ion, wherein the silicon compound contains silicon-hydrogen bonds and the silicon-hydrogen bonds are introduced into the compound by reduction of at least one compound selected from the group consisting of silicon oxide, silicon nitride and silicon carbide with hydrogen, and a negative electrode for nonaqueous electrolyte secondary battery having a layer containing the negative-electrode active material in the above arrangement formed on a current collector.

摘要翻译： 一种非水电解质二次电池用负极活性物质，其含有能够插入和提取锂离子的硅化合物，其中所述硅化合物含有硅 - 氢键，并且所述硅 - 氢键通过还原至少一种 选自氧化硅，氮化硅和碳化硅与氢的化合物，以及在集电体上形成有上述结构的含有负极活性物质的层的非水电解质二次电池用负极。

公开(公告)号：US20100328894A1

公开(公告)日：2010-12-30

申请号：US12865780

申请日：2009-02-16

申请人： Mikio Oda ,  Tomotaka Ishida ,  Hisaya Takahashi ,  Hideyuki Ono ,  Jun Sakai ,  Takashi Ohtsuka ,  Arihide Noda ,  Hikaru Kouta

发明人： Mikio Oda ,  Tomotaka Ishida ,  Hisaya Takahashi ,  Hideyuki Ono ,  Jun Sakai ,  Takashi Ohtsuka ,  Arihide Noda ,  Hikaru Kouta

IPC分类号： H05K7/20 ,  G02B6/36

CPC分类号： H01L25/167 ,  G02B6/4201 ,  G02B6/4257 ,  G02B6/4266 ,  G02B6/4274 ,  H01L2924/0002 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/00

摘要： Provided is an optical interconnection device in which a volume required for cooling is reduced. In the optical interconnection device, a plurality of optical modules (12) are arranged on a periphery of an LSI (11) electrically connected to an electric wiring board (10), and liquid cooling mechanisms (13, 14) are respectively placed on the LSI (11) and the optical modules (12). The plurality of optical modules (12) may be arranged only on a surface of the electric wiring board (10) where the LSI (11) is mounted, only on a surface opposite to the surface where the LSI (11) is mounted, or on both the same surface as and the opposite surface to the surface where the LSI (11) is mounted.

摘要翻译： 提供一种其中冷却所需的体积减小的光学互连装置。 在光互连装置中，在与电气布线板（10）电连接的LSI（11）的周围配置多个光模块（12），液体冷却机构（13,14）分别置于 LSI（11）和光模块（12）。 多个光学模块（12）可以仅布置在安装有LSI（11）的电气布线板（10）的仅在与安装LSI（11）的表面相对的表面上，或者 在与安装LSI（11）的表面相同的表面上和相对的表面上。

公开(公告)号：US20100098383A1

公开(公告)日：2010-04-22

申请号：US12449174

申请日：2008-01-21

申请人： Yuichi Koreeda ,  Wataru Ohtsu ,  Mikio Oda ,  Hisaya Takahashi ,  Takashi Ohtsuka ,  Hikaru Kouta ,  Hideyuki Ono

发明人： Yuichi Koreeda ,  Wataru Ohtsu ,  Mikio Oda ,  Hisaya Takahashi ,  Takashi Ohtsuka ,  Hikaru Kouta ,  Hideyuki Ono

IPC分类号： G02B6/36

CPC分类号： G02B6/4292 ,  G02B6/4284

摘要： In a photoelectric conversion/connection device (100) including an optical element (320), a mounting board (310) on which the optical element is mounted, and an optical connector (400) which is connected to the mounting board so as to be optically connected to the optical element, the optical connector (400) is arranged on a surface (310a) opposite to a mounting surface (310b) of the mounting board (310) and the optical element (320) is exposed. The photoelectric conversion/connection device (100) includes a motherboard (210) having a main surface (210a) and an electric connector (220) to be mounted on the main surface of the motherboard. The electric connector (220) is detachably connected to the mounting board (310).

摘要翻译： 在包括光学元件（320）的光电转换/连接装置（100），安装有光学元件的安装板（310）和连接到安装板的光连接器（400） 光连接到光学元件，光连接器（400）布置在与安装板（310）的安装表面（310b）相对的表面（310a）上，并且光学元件（320）被暴露。 光电转换/连接装置（100）包括具有主表面（210a）的主板（210）和安装在母板主表面上的电连接器（220）。 电连接器（220）可拆卸地连接到安装板（310）。

公开(公告)号：US06980043B2

公开(公告)日：2005-12-27

申请号：US11052794

申请日：2005-02-09

申请人： Kenji Toyoda ,  Takashi Ohtsuka

发明人： Kenji Toyoda ,  Takashi Ohtsuka

IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/866 ,  H03K17/62

CPC分类号： G11C11/22

摘要： A ferroelectric gate device which comprises a ferroelectric capacitor (1), a switching element (2) serving as a resistor or a capacitor depending on the voltage applied, and a field-effect transistor (6) having a source, a drain and a gate, said ferroelectric capacitor (1) having an input terminal (IN) at one end, the other end of said ferroelectric capacitor (1) being connected to one end of said switching element (2), the other end of said switching element (2) being connected to the gate of said field-effect transistor (6), by applying a voltage to said input terminal, said switching element (2) serving as a resistor when a voltage higher than the coercive voltage (Vc) of a ferroelectric substance which said ferroelectric capacitor (1) comprises is applied to said ferroelectric capacitor (1), and by applying a voltage to said input terminal, said switching element (2) serving as a capacitor when a voltage lower than the coercive voltage (Vc) of said ferroelectric substance is applied to said ferroelectric capacitor (1).

摘要翻译： 一种铁电栅极器件，包括铁电电容器（1），用作电阻器的开关元件（2）或取决于所施加的电压的电容器;以及具有源极，漏极和栅极的场效应晶体管 所述铁电电容器（1）的一端具有输入端（IN），所述铁电电容器（1）的另一端与所述开关元件（2）的一端连接，所述开关元件（2）的另一端 ）通过向所述输入端子施加电压而连接到所述场效应晶体管（6）的栅极，所述开关元件（2）在高于铁电体的矫顽电压（Vc）的电压时用作电阻器 所述铁电电容器（1）包括的所述铁电电容器（1）被施加到所述铁电电容器（1），并且通过向所述输入端子施加电压，所述开关元件（2）当电压低于所述铁电电容器（1）的矫顽电压 说ferroelec 三体物质被施加到所述铁电电容器（1）。

公开(公告)号：US06949780B2

公开(公告)日：2005-09-27

申请号：US10847323

申请日：2004-05-18

申请人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

IPC分类号： H01L27/10 ,  G11C27/00 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： G11C27/005 ,  G11C11/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistor 54 is connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistor 56 is the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.

公开(公告)号：US06859088B2

公开(公告)日：2005-02-22

申请号：US10716670

申请日：2003-11-20

申请人： Kenji Toyoda ,  Takashi Ohtsuka

发明人： Kenji Toyoda ,  Takashi Ohtsuka

IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/866 ,  H03K17/62 ,  H03K17/687

CPC分类号： G11C11/22

摘要： A ferroelectric gate device which comprises a ferroelectric capacitor (1), a switching element (2) serving as a resistor of a capacitor depending on the voltage applied, and a field-effect transistor (6) having a source, a drain and a gate, said ferroelectric capacitor (1) having an input terminal (IN) at one end, the other end of said ferroelectric capacitor (1) being connected to one end of said switching element (2), the other end of said switching element (2) being connected to the gate of said field-effect transistor (6), by applying a voltage to said input terminal, said switching element (2) serving as a resistor when a voltage higher than the coercive voltage (Vc) of a ferroelectric substance which said ferroelectric capacitor (1), and by applying a voltage to said input terminal, said switching element (2) serving as a capacitor when a voltage lower than the coercive voltage (Vc) of said ferroelectric substance is applied to said ferroelectric capacitor (1).

摘要翻译： 一种强电介质栅极器件，包括铁电电容器（1），根据施加的电压用作电容器的电阻器的开关元件（2）和具有源极，漏极和栅极的场效应晶体管 所述铁电电容器（1）的一端具有输入端（IN），所述铁电电容器（1）的另一端与所述开关元件（2）的一端连接，所述开关元件（2）的另一端 ）通过向所述输入端子施加电压而连接到所述场效应晶体管（6）的栅极，所述开关元件（2）在高于铁电体的矫顽电压（Vc）的电压时用作电阻器 所述铁电电容器（1），并且当低于所述铁电体的矫顽电压（Vc）的电压施加到所述铁电电容器时，所述开关元件（2）作为电容器施加电压到所述输入端子， 1）。

公开(公告)号：US06720288B1

公开(公告)日：2004-04-13

申请号：US10069032

申请日：2002-05-28

申请人： Masahiro Kanayama ,  Tsutomu Mabuchi ,  Takashi Ohtsuka ,  Sumitaka Kose

发明人： Masahiro Kanayama ,  Tsutomu Mabuchi ,  Takashi Ohtsuka ,  Sumitaka Kose

IPC分类号： A01N4356

CPC分类号： A01N43/56 ,  A01N57/20 ,  A01N61/00 ,  A01N57/00 ,  A01N25/30 ,  A01N57/18 ,  A01N57/02 ,  A01N2300/00

摘要： Herbicidal compositions containing as the active ingredients (one or more compounds selected from among light-induced herbicidal compounds and one or more compounds selected from among organoposphorus herbicidal compounds, characterized by containing ethylenediamine alkoxylates and alcohol alkoxylates as surfactants. These herbicidal compositions have an excellent rapid action and exert a remarkable herbicidal effect in a small dose.

摘要翻译： 含有作为活性成分的一种或多种化合物（一种或多种选自光诱导的除草化合物和一种或多种选自有机磷除草化合物的化合物的化合物，其特征在于含有乙二胺烷氧基化物和醇烷氧基化物作为表面活性剂，这些除草组合物具有极好的快速 作用并以小剂量发挥显着的除草效果。

公开(公告)号：US06285051B1

公开(公告)日：2001-09-04

申请号：US09310313

申请日：1999-05-12

申请人： Michihito Ueda ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Takashi Ohtsuka

IPC分类号： H01L2972

CPC分类号： H01L28/56

摘要： A low-leakage-current layer, made of BST in which the content of Ti deviates from its stoichiometric composition, is interposed between a high-dielectric-constant layer, made of BST with the stoichiometric composition, and an upper electrode. And a charge-storable dielectric film is made up of the high-dielectric-constant layer and the low-leakagecurrent layer. Such a BST film containing a larger number of Ti atoms than that defined by stoichiometry can suppress the leakage current to a larger degree. Also, if such a film is used, then the relative dielectric constant does not decrease so much as a BST film with the stoichiometric composition. Accordingly, the leakage current can be suppressed while minimizing the decrease in relative dielectric constant of the entire charge-storable dielectric film, which is a serial connection of capacitors, thus contributing to the downsizing of a semiconductor memory device. As a result, a semiconductor memory device, including a charge-storable dielectric film with decreased leakage current and enhanced charge storability, can be obtained.

摘要翻译： 由BST的含量偏离其化学计量组成的BST制成的低漏电流层插入由具有化学计量组成的BST制成的高介电常数层和上电极之间。 并且电荷存储电介质膜由高介电常数层和低漏电流层构成。 这样含有比化学计量定义的Ti原子数更多的BST膜可以更大程度地抑制漏电流。 此外，如果使用这样的膜，则相对介电常数不会像具有化学计量组成的BST膜那么多地降低。 因此，可以抑制泄漏电流，同时最小化作为电容器的串联连接的整个电荷存储电介质膜的相对介电常数的降低，从而有助于半导体存储器件的小型化。 结果，可以获得包括具有降低的漏电流和增强的电荷存储性的电荷存储电介质膜的半导体存储器件。

公开(公告)号：US06169414A

公开(公告)日：2001-01-02

申请号：US09106469

申请日：1998-06-30

申请人： Takehito Yoshino ,  Takashi Ohtsuka

发明人： Takehito Yoshino ,  Takashi Ohtsuka

IPC分类号： G01R3126

CPC分类号： H02S50/10

摘要： A predetermined area of a photo-sensing surface of a solar cell is illuminated, and a voltage vs. current characteristic is measured. Note, the rest of the photo-sensing surface which is not illuminated is called a dark area. Next, in a dark state in which the photo-sensing surface is not illuminated, a dark characteristic of the solar cell is measured. The obtained dark characteristic is multiplied by a ratio of the area of the dark area to the area of the photo-sensing surface, thereby a dark characteristic of the dark area is calculated. Then, a difference characteristic between the measured voltage vs. current characteristic and the dark characteristic of the dark area is calculated. The difference characteristic is multiplied by a ratio of the area of the photo-sensing surface to the area of the illuminated portion, thereby a voltage vs. current characteristic of the solar cell in a state corresponding to that the entire area of the photo-sensing surface is illuminated at once is obtained.

摘要翻译： 照射太阳能电池的感光面的规定面积，测定电压 - 电流特性。 注意，未被照亮的光感测表面的其余部分称为暗区。 接下来，在光敏表面不被照亮的暗状态下，测量太阳能电池的暗特性。 所获得的暗特性乘以暗区的面积与感光面的面积的比值，由此计算暗区的暗特性。 然后，计算测量的电压与电流特性之间的差异特性和黑暗区域的暗特性。 差分特性乘以感光表面的面积与照射部分的面积的比率，从而在与感光面的整个面积相对应的状态下的太阳能电池的电压对电流特性 立即照射表面。

公开(公告)号：US6128868A

公开(公告)日：2000-10-10

申请号：US922533

申请日：1997-09-03

申请人： Takashi Ohtsuka ,  Kimitoshi Fukae ,  Akiharu Takabayashi ,  Toshihiko Mimura ,  Masahiro Mori

发明人： Takashi Ohtsuka ,  Kimitoshi Fukae ,  Akiharu Takabayashi ,  Toshihiko Mimura ,  Masahiro Mori

IPC分类号： E04D1/30 ,  E04D3/40 ,  E04D13/18 ,  F24J2/52 ,  H01L31/042 ,  H01L31/048

CPC分类号： E04D1/365 ,  F24J2/5245 ,  H01L31/048 ,  H02S20/23 ,  H02S40/34 ,  E04D2001/3458 ,  F24J2/045 ,  Y02B10/12 ,  Y02B10/20 ,  Y02E10/47 ,  Y02E10/50

摘要： A roof member includes a solar battery module in which a solar battery element is fixed on a backing, with two opposite sides of the backing of the solar battery module bent to form an eaves-side connecting portion and a ridge-side connecting portion, and wherein the ridge-side connecting portion is open on the front surface side of roof member, and electrical wiring is provided in the ridge-side connecting portion. A plurality of such roof members are horizontally connected with each other by a joint drip plate, and a joint cover and wires of the respective roof members are connected with each other in the ridge-side connection portion. The eaves-side connecting portion and the ridge-side connecting portion of the respective roof members are seam-jointed with each other, and wires of the respective roof members are connected with each other in the ridge-side connecting portion.

摘要翻译： 屋顶构件包括太阳能电池模块，其中太阳能电池元件固定在背衬上，太阳能电池模块的背衬的两个相对侧弯曲以形成檐侧连接部分和脊侧连接部分，并且 其中，所述脊侧连接部在所述屋顶部件的前表面侧开口，并且在所述脊侧连接部设置电布线。 多个这样的屋顶构件通过接合滴水板彼此水平连接，并且各个屋顶构件的接合盖和线彼此连接在脊侧连接部分中。 相应屋顶构件的屋檐侧连接部分和脊侧连接部分彼此接缝，并且各个屋顶构件的电线在脊侧连接部分中彼此连接。