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    Method for fabricating copper-based interconnections for semiconductor device
    1.
    发明授权
    Method for fabricating copper-based interconnections for semiconductor device 失效
    制造半导体器件铜基互连的方法

    公开(公告)号：US07335596B2

    公开(公告)日：2008-02-26

    申请号：US11157862

    申请日：2005-06-22

    申请人： Takashi Onishi ,  Tatsuya Yasunaga ,  Hideo Fujii ,  Tetsuya Yoshikawa ,  Jun Munemasa

    发明人： Takashi Onishi ,  Tatsuya Yasunaga ,  Hideo Fujii ,  Tetsuya Yoshikawa ,  Jun Munemasa

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2855 ,  H01L21/76882

    摘要： Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of −20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.

    摘要翻译： 在半导体器件中通过溅射在电介质膜上沉积Cu或Cu合金薄膜来形成Cu基互连，所述电介质膜具有至少一个沟槽和/或通孔至少一个沟槽并且布置在衬底上或上方， 进行高温高压处理，从而将Cu或Cu合金嵌入沟槽和/或通孔中，在基板温度为-20℃〜0℃下进行溅射， 作为溅射气体，含有比例为5:95至20:80的氢气和惰性气体的气体混合物。

    Method for fabricating copper-based interconnections for semiconductor device
    2.
    发明申请
    Method for fabricating copper-based interconnections for semiconductor device 失效
    制造半导体器件铜基互连的方法

    公开(公告)号：US20060019496A1

    公开(公告)日：2006-01-26

    申请号：US11157862

    申请日：2005-06-22

    申请人： Takashi Onishi ,  Tatsuya Yasunaga ,  Hideo Fujii ,  Tetsuya Yoshikawa ,  Jun Munemasa

    发明人： Takashi Onishi ,  Tatsuya Yasunaga ,  Hideo Fujii ,  Tetsuya Yoshikawa ,  Jun Munemasa

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/2855 ,  H01L21/76882

    摘要： Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of −20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.

    摘要翻译： 在半导体器件中通过溅射在电介质膜上沉积Cu或Cu合金薄膜来形成Cu基互连，所述电介质膜具有至少一个沟槽和/或通孔至少一个沟槽并且布置在衬底上或上方， 进行高温高压处理，从而将Cu或Cu合金嵌入沟槽和/或通孔中，在基板温度为-20℃〜0℃下进行溅射， 作为溅射气体，含有比例为5:95至20:80的氢气和惰性气体的气体混合物。

    Filamentous Material for Rubber Reinforcement Having Excellent Corrosion Resistance, and a Composite Material of the Filamentous Material for Rubber Reinforcement and a Rubber
    4.
    发明申请
    Filamentous Material for Rubber Reinforcement Having Excellent Corrosion Resistance, and a Composite Material of the Filamentous Material for Rubber Reinforcement and a Rubber 审中-公开
    用于具有优异耐腐蚀性的橡胶增强材料的丝状材料和用于橡胶增强材料和橡胶的复合材料

    公开(公告)号：US20070209348A1

    公开(公告)日：2007-09-13

    申请号：US11547356

    申请日：2005-03-30

    申请人： Toshiyuki Yamauchi ,  Tatsuya Yasunaga

    发明人： Toshiyuki Yamauchi ,  Tatsuya Yasunaga

    IPC分类号： D02G3/36

    CPC分类号： C22C9/04 ,  B60C9/0007 ,  C23C28/021 ,  C23C28/023 ,  C23C28/025 ,  C23C30/00 ,  D07B1/0666

    摘要： This invention provides a filamentous material for rubber reinforcement having excellent corrosion resistance, comprising: a steel filament and a coating layer containing Cu and Zn on a surface of the steel filament, wherein: a sum total in a length of a peripheral direction of the steel filament in a peripheral direction area in which the coating layer has a thickness of not less than 0.1 micrometers is not less than 50% in a full length in the peripheral direction of the steel filament when a cross section perpendicular to a longitudinal direction of the filamentous material is observed, and in the above peripheral direction area, (1) an average Cu content is 50% to 95% by mass in a depth direction area extending from an outermost surface of the coating layer to a position having a depth of 0.01 micrometers, and (2) an average Zn content is not less than 60% by mass in a depth direction area extending from a position having a depth of 0.1 micrometers of the coating layer to the outermost surface of the steel filament.

    摘要翻译： 本发明提供一种用于橡胶增强材料的丝状材料，具有优异的耐腐蚀性，其特征在于，包括：钢丝和钢丝表面上含有Cu和Zn的涂层，其中钢的周向长度总和 其中涂层的厚度不小于0.1微米的圆周方向区域的细丝在垂直于丝状物的纵向方向的横截面上不小于钢丝圆周方向全长的50％ 观察到材料，并且在上述周向区域中，（1）在从涂层的最外表面延伸到深度为0.01微米的位置的深度方向区域，平均Cu含量为50％至95质量％ ，（2）在从涂层的深度为0.1微米的位置延伸到外部的深度方向区域中，平均Zn含量不小于60质量％ 大多数钢丝表面。

    Corrosion resistant Ti-Cr-Ni alloy containing a platinum group metal
    5.
    发明授权
    Corrosion resistant Ti-Cr-Ni alloy containing a platinum group metal 失效
    含有铂族金属的耐腐蚀Ti-Cr-Ni合金

    公开(公告)号：US5316722A

    公开(公告)日：1994-05-31

    申请号：US911077

    申请日：1992-07-09

    申请人： Yasuaki Sugizaki ,  Keiji Ueda ,  Hiroshi Satoh ,  Hidetoshi Nishimoto ,  Tatsuya Yasunaga ,  Takashi Yashiki

    发明人： Yasuaki Sugizaki ,  Keiji Ueda ,  Hiroshi Satoh ,  Hidetoshi Nishimoto ,  Tatsuya Yasunaga ,  Takashi Yashiki

    IPC分类号： C22C14/00

    CPC分类号： C22C14/00

    摘要： A corrosion resistant Ti based alloy comprising:Cr: 0.005-2.0 wt %, and furthercomprising one or more of elements selected from:______________________________________ Ni: 0.005-2.0 wt %, Pd: 0.005-2.0 wt %, Ru: 0.005-2.0 wt %, Pt: 0.005-2.0 wt %, Os: 0.005-2.0 wt %, Ir: 0.005-2.0 wt %, Rh: 0.005-2.0 wt %, and ______________________________________ the balance of Ti and inevitable impurities.Cr may be replaced with one or more of 0.005-1.5 wt % of Cu and 0.005-1.5 wt % of Si, or 0.005-2.0 wt % of Al. The corrosion resistant Ti based alloy has excellent corrosion resistance also in a non-oxidative atmosphere and also has an excellent crevice corrosion resistance.

    摘要翻译： 一种耐蚀Ti基合金，其特征在于：Cr：0.005〜2.0重量％，进一步含有选自以下的一种或多种元素：-Ni：0.005〜2.0重量％，Pd：0.005〜2.0重量％，-Ru：0.005〜2.0 重量％，Pt：0.005〜2.0重量％，-Os：0.005〜2.0重量％，Ir：0.005〜2.0重量％，-Rh：0.005〜2.0重量％，余量由Ti和不可避免的杂质构成。 可以用0.005-1.5重量％的Cu和0.005-1.5重量％的Si或0.005-2.0重量％的Al中的一种或多种来代替Cr。 耐腐蚀的Ti基合金在非氧化性气氛中也具有优良的耐腐蚀性，并且还具有良好的耐缝隙腐蚀性。

    Corrosion resistant Ti alloy containing Cu, Si, and a platinum group metal
    7.
    发明授权
    Corrosion resistant Ti alloy containing Cu, Si, and a platinum group metal 失效
    含有Cu，Si和铂族金属的耐腐蚀Ti合金

    公开(公告)号：US5437835A

    公开(公告)日：1995-08-01

    申请号：US186547

    申请日：1994-01-26

    申请人： Yasuaki Sugizaki ,  Keiji Ueda ,  Hiroshi Satoh ,  Hidetoshi Nishimoto ,  Tatsuya Yasunaga ,  Takashi Yashiki

    发明人： Yasuaki Sugizaki ,  Keiji Ueda ,  Hiroshi Satoh ,  Hidetoshi Nishimoto ,  Tatsuya Yasunaga ,  Takashi Yashiki

    IPC分类号： C22C14/00

    CPC分类号： C22C14/00

    摘要： A corrosion resistant Ti based alloy comprising:Cr: 0.005-2.0 wt %, and further comprising one or more of elements selected from:Ni: 0.005-2.0 wt %, Pd: 0.005-2.0 wt %, Ru: 0.005-2.0 wt %, Pt: 0.005-2.0 wt %, Os: 0.005-2.0 wt %, Ir: 0.005-2.0 wt %, Rh: 0.005-2.0 wt %, andthe balance of Ti and inevitable impurities.Cr may be replaced with one or more of 0.005-1.5 wt % of Cu and 0.005-1.5 wt % of Si, or 0.005-2.0 wt % of Al. The corrosion resistant Ti based alloy has excellent corrosion resistance also in a non-oxidative atmosphere and also has an excellent crevice corrosion resistance.

    摘要翻译： 一种耐蚀Ti基合金，其特征在于：Cr：0.005〜2.0重量％，进一步含有选自Ni：0.005〜2.0重量％，Pd：0.005〜2.0重量％，Ru：0.005〜2.0重量％ ，Pt：0.005〜2.0重量％，Os：0.005〜2.0重量％，Ir：0.005〜2.0重量％，Rh：0.005〜2.0重量％，余量由Ti和不可避免的杂质构成。 可以用0.005-1.5重量％的Cu和0.005-1.5重量％的Si或0.005-2.0重量％的Al中的一种或多种来代替Cr。 耐腐蚀的Ti基合金在非氧化性气氛中也具有优良的耐腐蚀性，并且还具有良好的耐缝隙腐蚀性。