公开(公告)号：US07714485B2

公开(公告)日：2010-05-11

申请号：US11442355

申请日：2006-05-30

申请人： Takashi Shiba ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

发明人： Takashi Shiba ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

IPC分类号： H01L41/04

CPC分类号： H03H9/02015 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02543 ,  Y10T29/42

摘要： A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10−20 F/V and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

摘要翻译： 公开了一种由+ C面上的AlN的压电薄膜形成并且具有不低于0.63×10-20F / V的极化强度的压电薄膜声波器件和使用该压电薄膜声波器件的信息处理单元。 这是本发明人研究了影响机电耦合系数的C轴取向以外的因素的结果，并且考虑到机电耦合系数不能通过改善机电耦合系数而改进的偶然事实而开发改进机电耦合系数的方法 C轴取向和压电薄膜声波装置所需的机电耦合系数不能得到。 在这种情况下，接收系统的接收灵敏度可能恶化，并且传输系统的传输强度需要不期望地增加，对节电工作具有不利影响。

公开(公告)号：US20070024157A1

公开(公告)日：2007-02-01

申请号：US11442355

申请日：2006-05-30

申请人： Takashi Shiba ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

发明人： Takashi Shiba ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

IPC分类号： H03H9/25

CPC分类号： H03H9/02015 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02543 ,  Y10T29/42

摘要： A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10−20 F/V and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

摘要翻译： 一种压电薄膜声波装置，其由+ C面上的AlN的压电薄膜构成，具有不低于0.63×10 -2 / F / V的极化强度，以及使用 同样公开。 这是本发明人研究了影响机电耦合系数的C轴取向以外的因素的结果，并且考虑到机电耦合系数不能通过改善机电耦合系数而改进的偶然事实，开发改进机电耦合系数的方法 C轴取向和压电薄膜声波装置所需的机电耦合系数不能得到。 在这种情况下，接收系统的接收灵敏度可能恶化，并且传输系统的传输强度需要不期望地增加，对节电工作具有不利影响。

公开(公告)号：US07876031B2

公开(公告)日：2011-01-25

申请号：US12608843

申请日：2009-10-29

申请人： Takashi Shiba ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

发明人： Takashi Shiba ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

IPC分类号： H01L41/18

CPC分类号： H03H9/02015 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02543 ,  Y10T29/42

摘要： A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10−20 F/V and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

摘要翻译： 公开了一种由+ C面上的AlN的压电薄膜形成并且具有不低于0.63×10-20F / V的极化强度的压电薄膜声波器件和使用该压电薄膜声波器件的信息处理单元。 这是本发明人研究了影响机电耦合系数的C轴取向以外的因素的结果，并且考虑到机电耦合系数不能通过改善机电耦合系数而改进的偶然事实，开发改进机电耦合系数的方法 C轴取向和压电薄膜声波装置所需的机电耦合系数不能得到。 在这种情况下，接收系统的接收灵敏度可能恶化，并且传输系统的传输强度需要不期望地增加，对节电工作具有不利影响。

公开(公告)号：US20100045138A1

公开(公告)日：2010-02-25

申请号：US12608843

申请日：2009-10-29

申请人： Takashi SHIBA ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

发明人： Takashi SHIBA ,  Kazuo Tsubouchi ,  Kensei Uehara ,  Hiroyuki Nakase ,  Suguru Kameda ,  Yoji Isota ,  Yasuo Cho

IPC分类号： H01L41/04 ,  H01L41/22

CPC分类号： H03H9/02015 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02543 ,  Y10T29/42

摘要： A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10−20 FN and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

摘要翻译： 公开了一种压电薄膜声波器件，其由+ C面上的AlN的压电薄膜和极化强度不低于0.63×10-20FN的信号处理单元构成。 这是本发明人研究了影响机电耦合系数的C轴取向以外的因素的结果，并且考虑到机电耦合系数不能通过改善机电耦合系数而改进的偶然事实，开发改进机电耦合系数的方法 C轴取向和压电薄膜声波装置所需的机电耦合系数不能得到。 在这种情况下，接收系统的接收灵敏度可能恶化，并且传输系统的传输强度需要不期望地增加，对节电工作具有不利影响。

公开(公告)号：US5142240A

公开(公告)日：1992-08-25

申请号：US631502

申请日：1990-12-21

申请人： Yoji Isota ,  Gen Toyoshima ,  Noriharu Suematsu ,  Yukio Ikeda ,  Tadashi Takagi ,  Shuji Urasaki

发明人： Yoji Isota ,  Gen Toyoshima ,  Noriharu Suematsu ,  Yukio Ikeda ,  Tadashi Takagi ,  Shuji Urasaki

IPC分类号： H03F1/02 ,  H03F1/32 ,  H03F3/189 ,  H03F3/193

CPC分类号： H03F1/0227 ,  H03F1/3223

摘要： A high frequency amplifier circuit comprises an amplitude characteristic correction circuit and a phase characteristic correction circuit for compensating the non-linearity of the input-output characteristics of the amplifier. The amplitude characteristic correction circuit varies the drain voltage or the collector voltage of the amplifier in accordance with the envelope level of an input signal in such a manner that the relationship between the amplitude of the output of the amplifier and the amplitude of the input signal has linearity. On the other hand, the phase characteristic correction circuit provides a quantity of phase shift to the input signal in accordance with the envelope level of the input signal, and the phase-shifted input signal is applied to the amplifier in such a manner that the phase of the output of the amplifier and that of the input signal coincide with each other.

摘要翻译： 高频放大器电路包括用于补偿放大器的输入 - 输出特性的非线性的幅度特性校正电路和相位特性校正电路。 幅度特性校正电路根据输入信号的包络电平来改变放大器的漏极电压或集电极电压，使得放大器的输出的幅度与输入信号的幅度之间的关系具有 线性度 另一方面，相位特性校正电路根据输入信号的包络电平向输入信号提供一定量的相移，并且将相移输入信号以这样的方式施加到放大器： 的放大器的输出和输入信号的输出相互重合。

公开(公告)号：US5093629A

公开(公告)日：1992-03-03

申请号：US631845

申请日：1990-12-21

申请人： Gen Toyoshima ,  Yukio Ikeda ,  Noriharu Suematsu ,  Yoji Isota ,  Tadashi Takagi ,  Shuji Urasaki

发明人： Gen Toyoshima ,  Yukio Ikeda ,  Noriharu Suematsu ,  Yoji Isota ,  Tadashi Takagi ,  Shuji Urasaki

IPC分类号： H03F1/32

CPC分类号： H03F1/3223

摘要： An amplifier circuit suitable for use in various types of communication devices, radar systems and the like, wherein a fundamental-wave signal extracted from an input side is converted into a second order signal and the second order signal is shifted so as to be opposite in phase and equal in amplitude to a second order signal produced by an amplifier such as an FET or multistage operational amplifier. The phase shifted signal is applied to the amplifier output, whereby the second order signal produced by the amplifier can assuredly be equivalently short-circuited and the operation efficiency of the amplifier can be improved.

摘要翻译： 一种适用于各种通信装置，雷达系统等的放大电路，其中从输入侧提取的基波信号被转换为二阶信号，并且第二级信号被移位以相对于 相位等于由诸如FET或多级运算放大器的放大器产生的二阶信号。 相位移信号被施加到放大器输出，由放大器产生的二阶信号可以确实等效地短路，并且可以提高放大器的工作效率。

公开(公告)号：US5764185A

公开(公告)日：1998-06-09

申请号：US704924

申请日：1996-08-28

申请人： Tomoaki Fukushima ,  Yoji Isota

发明人： Tomoaki Fukushima ,  Yoji Isota

IPC分类号： G01S3/42 ,  H01Q1/27 ,  H01Q1/32 ,  H01Q3/04 ,  H01Q3/06 ,  H04B7/155 ,  H04B7/26 ,  H01Q3/00

CPC分类号： H01Q3/06 ,  H01Q1/3233 ,  H01Q3/04

摘要： A method and apparatus for controlling an antenna and a tracking antenna system using them. A rate sensor detects the angular rate of the vehicle turning. On the basis of the detected value, an error correction circuit determines the steering angle of the antenna. If it is judged from the determined angle that the vehicle is not turning or only slightly turning, a motor driving circuit suspends driving of a motor and at the same time a linear actuator locks a major gear. If it is judged that an accumulated error of a control target which is determined on the basis of the output of the rate sensor is not negligible, the error correction circuit starts a closed-loop control on the basis of a receiving signal level. In such a manner, the power consumption in the motor can be reduced.

摘要翻译： 一种用于控制天线的方法和装置以及使用它们的跟踪天线系统。 速率传感器检测车辆转向的角速度。 基于检测值，纠错电路确定天线的转向角。 如果从确定的角度判断车辆没有转弯或仅仅转动，则电动机驱动电路暂停电动机的驱动，同时线性致动器锁定主齿轮。 如果判断出基于速率传感器的输出确定的控制目标的累积误差不可忽略，则纠错电路基于接收信号电平开始闭环控制。 以这种方式，可以降低电动机的功率消耗。

公开(公告)号：US5233313A

公开(公告)日：1993-08-03

申请号：US907011

申请日：1992-07-01

申请人： Masaki Kohno ,  Yoji Isota ,  Mitsuru Mochizuki

发明人： Masaki Kohno ,  Yoji Isota ,  Mitsuru Mochizuki

IPC分类号： H01L27/06 ,  H01L21/338 ,  H01L21/8232 ,  H01L23/66 ,  H01L29/812 ,  H03F1/56 ,  H03F3/193 ,  H03F3/60

CPC分类号： H01L23/66 ,  H01L24/49 ,  H03F1/56 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111

摘要： A high power field effect transistor (FET) amplifier which can provide a high gain over a wide bandwidth of a microwave range includes, on a first substrate on which a grounded-source field effect transistor is disposed, a series combination of an inductor and a capacitor connected between the gate of the FET and ground. The gate of the FET is coupled to an input impedance matching circuit disposed on a second substrate. The drain of the FET is coupled to an output impedance matching circuit disposed on a third substrate.

摘要翻译： 可以在微波范围的宽带宽上提供高增益的高功率场效应晶体管（FET）放大器包括：在其上设置接地源场效应晶体管的第一衬底上，电感器和 电容器连接在FET的栅极和地之间。 FET的栅极耦合到设置在第二基板上的输入阻抗匹配电路。 FET的漏极耦合到设置在第三衬底上的输出阻抗匹配电路。

公开(公告)号：US07612633B2

公开(公告)日：2009-11-03

申请号：US11748852

申请日：2007-05-15

申请人： Masatake Hangai ,  Yukinobu Tarui ,  Tamotsu Nishino ,  Yoshitsugu Yamamoto ,  Moriyasu Miyazaki ,  Yoji Isota

发明人： Masatake Hangai ,  Yukinobu Tarui ,  Tamotsu Nishino ,  Yoshitsugu Yamamoto ,  Moriyasu Miyazaki ,  Yoji Isota

IPC分类号： H01P1/10 ,  H01P1/15

CPC分类号： H01P1/15

摘要： The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.

摘要翻译： 本发明提供一种高频开关，包括：连接在第一输入/输出端子和第二输入/输出端子之间的第一开关元件; 连接在第二输入/输出端子和第一开关元件之间的第二开关元件; 设置在第一输入/输出端子，第一开关元件和第三输入/输出端子之间的高频线; 以及连接在第三输入/输出端子，高频线路和地之间的第三开关元件。 通过连接第一开关元件，第二开关元件，高频线路和第三开关元件，因为当第一输入/输出端子和第三输入/输出端子之间的状态不存在大电流流过的FET时， 输出端子被设置为需要高功率处理能力的传输状态，不需要使用具有大栅极宽度的FET，这有效地减少了开关损耗。

公开(公告)号：US20080106353A1

公开(公告)日：2008-05-08

申请号：US11748852

申请日：2007-05-15

申请人： Masatake Hangai ,  Yukinobu Tarui ,  Tamotsu Nishino ,  Yoshitsugu Yamamoto ,  Moriyasu Miyazaki ,  Yoji Isota

发明人： Masatake Hangai ,  Yukinobu Tarui ,  Tamotsu Nishino ,  Yoshitsugu Yamamoto ,  Moriyasu Miyazaki ,  Yoji Isota

IPC分类号： H01P1/15

CPC分类号： H01P1/15

摘要： The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.

摘要翻译： 本发明提供一种高频开关，包括：第一开关元件，连接在第一输入/输出端子与第二输入/输出端子之间; 连接在第二输入/输出端子和第一开关元件之间的第二开关元件; 设置在第一输入/输出端子，第一开关元件和第三输入/输出端子之间的高频线; 以及连接在第三输入/输出端子，高频线路和地之间的第三开关元件。 通过连接第一开关元件，第二开关元件，高频线路和第三开关元件，因为当第一输入/输出端子和第三输入/输出端子之间的状态不存在大电流流过的FET时， 输出端子被设置为需要高功率处理能力的传输状态，不需要使用具有大栅极宽度的FET，这有效地减少了开关损耗。