摘要:
A linear amplifier includes a variable attenuator and a phase shifter for modifying the amplitude and phase of an input signal to compensate for amplitude and phase distortion caused by non-linear characteristics of a high-powered amplifier utilized in a microwave band communications system. An amplitude comparator and a phase comparator compare the amplitudes and phases of input and output signals of the linear amplifier circuit to develop control signals for controlling the operation of the variable attenuator and phase shifter. The elimination of digital signal processing circuitry allows increased speed of operation that is essential for use in the microwave bands.
摘要:
In a modulation system using an amplitude and a phase of a carrier wave as information such as a QPSK system, a modulation device modifies an input signal series to compensate the nonlinear characteristics of an amplifier located at a later stage, and provides a carrier wave modulated by the modified signal series to the amplifier. A first arithmetic circuit obtains an amplitude and a phase of an input signal by calculation. A ROM is set with correction data corresponding to the calculated amplitude so as to compensate the nonlinearity of the amplifier. A modification value generating circuit and a RAM output an amount of compensation so as to further modify the correction data according to part of an output signal from the amplifier to compensate amplifier characteristic changes due to temperature variations and the like. A second arithmetic circuit provides a signal series produced from the modified amplitude and phase to a quadrature modulator.
摘要:
An amplifier circuit suitable for use in various types of communication devices, radar systems and the like, wherein a fundamental-wave signal extracted from an input side is converted into a second order signal and the second order signal is shifted so as to be opposite in phase and equal in amplitude to a second order signal produced by an amplifier such as an FET or multistage operational amplifier. The phase shifted signal is applied to the amplifier output, whereby the second order signal produced by the amplifier can assuredly be equivalently short-circuited and the operation efficiency of the amplifier can be improved.
摘要:
A high frequency amplifier circuit comprises an amplitude characteristic correction circuit and a phase characteristic correction circuit for compensating the non-linearity of the input-output characteristics of the amplifier. The amplitude characteristic correction circuit varies the drain voltage or the collector voltage of the amplifier in accordance with the envelope level of an input signal in such a manner that the relationship between the amplitude of the output of the amplifier and the amplitude of the input signal has linearity. On the other hand, the phase characteristic correction circuit provides a quantity of phase shift to the input signal in accordance with the envelope level of the input signal, and the phase-shifted input signal is applied to the amplifier in such a manner that the phase of the output of the amplifier and that of the input signal coincide with each other.
摘要:
A non-linearity compensating circuit for a high frequency amplifier includes a first divider for dividing a high frequency input signal into two signals, a distortion generating amplifier for non-linearly amplifying the first output of the first divider, a linear amplifier for linearly amplifying the second output from the first divider, a second divider for dividing the output of the linear amplifier into first and second signals, a first combiner for combining the output of the distortion generating amplifier with the first signal to extract the distortion component of the distortion generating amplifier, and a second combiner for combining the second signal with the distortion component.
摘要:
A low-distortion radio-frequency amplifying apparatus is equipped with a distortion compensating circuit for generating a distortion signal which cancels a distortion generated during radio-frequency amplification. The apparatus detects a signal corresponding to an envelope power of the output or input of an amplifier, varies a distortion compensating characteristic according to the power value, and compensates a distortion over a wide dynamic range. The apparatus includes a detector for detecting an envelope detection signal of the amplifier, and a controller for compensating the distortion compensating characteristic according to the detected signal.
摘要:
A small-sized, high-efficiency semiconductor amplifier exhibits a satisfactory efficiency characteristic over a wide band and a low output level for secondary and tertiary higher harmonics. The semiconductor amplifier is equipped with an output circuit which is composed of a parallel resonance circuit for the secondary higher harmonic of the fundamental-operation frequency, a first connection line, a second connection line, and an open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic, the drain terminal of FETs leading to the output circuit being connected to one end of the parallel resonance circuit through the first connection line, an open point being formed at one end of the parallel resonance circuit, the other end of the parallel resonance circuit for the secondary higher harmonic being connected to the open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic through the second connection line, the length and width of the first connection line being adjusted to determine the secondary-higher-harmonic load-reflection coefficient of the FETs as seen from the drain thereof to such a value as will maximize the efficiency of the amplifier, the length and width of the second connection line being appropriately adjusted so as to adjust the impedance matching conditions with respect to the fundamental wave.
摘要:
In a multi-layer substrate module receiving from an external earth node (20) supply of a reference potential (Vss) for grounding, a plurality of ground lines (170-1, 170-2, 170-3) are provided respectively corresponding to a plurality of internal circuits (210, 220, 230). Moreover, a common node (Ncmn) for coupling the ground lines (170-1, 170-2, 170-3) is provided in an insulating layer (105C) of the multi-layer substrate module. The common node (Ncmn) is electrically coupled to the earth node 20 through a ground pin terminal 204 shared by the plurality of internal circuits (210, 220, 230). Preferably, the common node (Ncmn) is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits (210, 220, 230), can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits (210, 220, 230) is prevented, enabling stable operation.
摘要:
In a multi-layer substrate module receiving from an external earth node supply of a reference potential for grounding, a plurality of ground lines are provided respectively corresponding to a plurality of internal circuits. Moreover, a common node for coupling the ground lines is provided in an insulating layer of the multi-layer substrate module. The common node is electrically coupled to the earth node through a ground pin terminal shared by the plurality of internal circuits. Preferably, the common node is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits, can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits is prevented, enabling stable operation.
摘要:
A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.