公开(公告)号：US06864546B2

公开(公告)日：2005-03-08

申请号：US10699890

申请日：2003-11-04

申请人： Takashi Terauchi ,  Shigeru Shiratake

发明人： Takashi Terauchi ,  Shigeru Shiratake

IPC分类号： H01L21/8242 ,  H01L21/8239 ,  H01L21/8247 ,  H01L27/108 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11526 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11543

摘要： A semiconductor device having a memory cell portion and a peripheral circuit portion is provided which achieves suppression of reduction of punch-through margin of transistors in the peripheral circuit portion and offers ensured short margin and enhanced current driving capability. After a high-temperature (800° C. to 1000° C.) thermal treatment that is performed to improve burying characteristics after formation of an interlayer insulating film, and also after a high-temperature (800° C. to 1000° C.) thermal treatment that is performed to enhance refresh characteristics after formation of contact plugs in the memory cell portion, a silicon oxide film and insulating film formed on a semiconductor substrate in the peripheral circuit portion are removed by anisotropic dry-etching, leaving the insulating film as sidewall insulating films on sides of sidewall nitride films. Then an impurity ion implantation process is performed using gate interconnections as implant masks to form source/drain regions in the peripheral circuit portion.

摘要翻译： 提供了具有存储单元部分和外围电路部分的半导体器件，其实现了抑制外围电路部分中的晶体管的穿通余量的减小，并提供了确保的短边和增强的电流驱动能力。 在高温（800℃〜1000℃）的热处理之后，为了提高层间绝缘膜形成后的埋藏特性，以及高温（800℃〜1000℃） ）通过各向异性干蚀刻除去在存储单元部分中形成接触插塞之后形成接触插塞，形成在外围电路部分中的半导体衬底上的氧化硅膜和绝缘膜上的刷新特性的热处理，留下绝缘膜 作为侧壁氮化物膜侧壁上的侧壁绝缘膜。 然后使用栅极互连作为注入掩模来执行杂质离子注入工艺，以在外围电路部分中形成源/漏区。

公开(公告)号：US06812536B2

公开(公告)日：2004-11-02

申请号：US10383753

申请日：2003-03-10

申请人： Shuichi Ueno ,  Yukio Nishida ,  Hiroshi Umeda ,  Kenichi Ohto ,  Takashi Terauchi ,  Shigeru Shiratake ,  Akinori Kinugasa

发明人： Shuichi Ueno ,  Yukio Nishida ,  Hiroshi Umeda ,  Kenichi Ohto ,  Takashi Terauchi ,  Shigeru Shiratake ,  Akinori Kinugasa

IPC分类号： H01L2976

CPC分类号： H01L29/42368 ,  H01L21/28247

摘要： A smile oxide film, serving as a gate oxide film, is formed under a three-layer poly-metal gate consisting of a doped polysilicon layer, a tungsten layer, and a SiON layer. The smile oxide film has a first region located beneath an edge of the poly-metal gate and a second region located beneath a central portion of the poly-metal gate. A film thickness of the first region is larger than a film thickness of the second region. An anti-oxidizing film, having a small oxygen diffusion rate compared with the polysilicon layer, entirely covers the poly-metal gate without exposing.

摘要翻译： 作为栅极氧化膜的微笑氧化膜形成在由掺杂多晶硅层，钨层和SiON层构成的三层多金属栅极的下方。 微笑氧化膜具有位于多金属栅极的边缘下方的第一区域和位于多金属栅极的中心部分下方的第二区域。 第一区域的膜厚度大于第二区域的膜厚度。 与多晶硅层相比具有小的氧扩散速率的抗氧化膜完全覆盖多金属栅极而不暴露。

公开(公告)号：US07614575B2

公开(公告)日：2009-11-10

申请号：US12014167

申请日：2008-01-15

申请人： Takashi Terauchi

发明人： Takashi Terauchi

IPC分类号： A01K89/01

CPC分类号： A01K89/017

摘要： The electric reel for fishing includes a spool rotatably supported between the side plates of a reel body and a driving motor arranged on the reel body for driving and rotating the spool. A concave part is formed on the reel body, an armature is rotatably arranged inside the concave part and a magnet constituting a magnetic field is mounted on the inner surface of the concave part opposed to the armature to constitute a driving motor for driving and rotating the spool.

摘要翻译： 用于钓鱼的电动卷轴包括可旋转地支撑在卷轴体的侧板和布置在卷轴体上的用于驱动和旋转卷轴的驱动马达的卷轴。 在卷线器主体上形成凹部，电枢可旋转地配置在凹部内部，构成磁场的磁铁安装在与电枢相对的凹部的内表面上，构成驱动马达，驱动和旋转 线轴。

公开(公告)号：US07315061B2

公开(公告)日：2008-01-01

申请号：US11209847

申请日：2005-08-24

申请人： Takashi Terauchi

发明人： Takashi Terauchi

IPC分类号： H01L29/792

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/7881 ,  H01L29/792

摘要： An insulating film provided below a floating gate electrode includes a first insulating film located at both end portions below the floating gate electrode, and a second insulating film sandwiched between the first insulating films and located in a middle portion below the floating gate electrode. The first insulating film and the second insulating film are formed in separate steps, and the first insulating film is thicker than the second insulating film. With this structure, when an insulating film is provided between the floating gate electrode and a silicon substrate to have a thickness more increased at its end portion than at its middle portion, the thickness can be increased more freely and a degree of the increase can be controlled more readily.

公开(公告)号：US07398939B2

公开(公告)日：2008-07-15

申请号：US11854262

申请日：2007-09-12

申请人： Takashi Terauchi ,  Shinji Murakami

发明人： Takashi Terauchi ,  Shinji Murakami

IPC分类号： A01K89/01

CPC分类号： A01K89/017

摘要： An electric fishing reel has a power transmission mechanism for transmitting rotational driving force based on a drive motor and a manual handle to a spool; and a clutch mechanism for switching the power transmission mechanism between a power transmitting state and a power cutoff state. The power transmission mechanism includes a planetary gear mechanism disposed on the drive motor; a first rotor with which the planetary gear mesh; a second rotor which is driven and coupled to the first rotor through a belt; and a clutch actuating member fitted and rotationally locked in the second rotor to be movable in an axial direction and is moved in the axial direction. An engaging portion of the clutch actuating member is capable of switching the power transmission mechanism between a power transmitting state and a power cutoff state by engaging with or disengaging from a retaining portion of the spool.

摘要翻译： 电动钓鱼卷轴具有用于将驱动马达和手动手柄的旋转驱动力传递到卷轴的动力传递机构; 以及用于在动力传递状态和动力切断状态之间切换动力传递机构的离合器机构。 动力传递机构包括设置在驱动马达上的行星齿轮机构; 行星齿轮啮合的第一转子; 第二转子，其通过带驱动并联接到第一转子; 以及离合器致动构件，其配合并旋转地锁定在所述第二转子中，以能够沿轴向移动并沿轴向移动。 离合器致动构件的接合部分能够通过与卷轴的保持部分接合或脱离而在动力传递状态和动力切断状态之间切换动力传递机构。

公开(公告)号：US20070257304A1

公开(公告)日：2007-11-08

申请号：US11822071

申请日：2007-07-02

申请人： Takashi Terauchi

发明人： Takashi Terauchi

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/7881 ,  H01L29/792

摘要： An insulating film provided below a floating gate electrode includes a first insulating film located at both end portions below the floating gate electrode, and a second insulating film sandwiched between the first insulating films and located in a middle portion below the floating gate electrode. The first insulating film and the second insulating film are formed in separate steps, and the first insulating film is thicker than the second insulating film. With this structure, when an insulating film is provided between the floating gate electrode and a silicon substrate to have a thickness more increased at its end portion than at its middle portion, the thickness can be increased more freely and a degree of the increase can be controlled more readily.

公开(公告)号：US20060043465A1

公开(公告)日：2006-03-02

申请号：US11209847

申请日：2005-08-24

申请人： Takashi Terauchi

发明人： Takashi Terauchi

IPC分类号： H01L29/788 ,  H01L29/76

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/7881 ,  H01L29/792

摘要： An insulating film provided below a floating gate electrode includes a first insulating film located at both end portions below the floating gate electrode, and a second insulating film sandwiched between the first insulating films and located in a middle portion below the floating gate electrode. The first insulating film and the second insulating film are formed in separate steps, and the first insulating film is thicker than the second insulating film. With this structure, when an insulating film is provided between the floating gate electrode and a silicon substrate to have a thickness more increased at its end portion than at its middle portion, the thickness can be increased more freely and a degree of the increase can be controlled more readily.

公开(公告)号：US06653739B2

公开(公告)日：2003-11-25

申请号：US09901113

申请日：2001-07-10

申请人： Takashi Terauchi ,  Yoshinori Tanaka

发明人： Takashi Terauchi ,  Yoshinori Tanaka

IPC分类号： H01L2352

CPC分类号： H01L21/76831 ,  H01L21/76804 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S257/908 ,  H01L2924/00

摘要： A contact plug 26 formed between adjacent two wirings 14 according to a self-aligning manner is provided. An interlayer oxide film 12 is provided on a substrate layer 10 conductive to the bottom face of the contact plug. A lower insulating film 32 formed of a nitride based insulating film is provided so as to cover the entire surface of the interlayer oxide film 12 except for the contact hole portion. A wiring 12, an upper insulating film 16 formed of a nitride based insulating film, and sidewalls 18 formed of a nitride based insulating film are provided over the lower insulating film 32. The contact hole has a diameter larger than the interval defined between the wirings 14 in the same layer as the interlayer oxide film 12.

公开(公告)号：US06579776B2

公开(公告)日：2003-06-17

申请号：US10083116

申请日：2002-02-27

申请人： Takashi Terauchi

发明人： Takashi Terauchi

IPC分类号： H01L2100

CPC分类号： H01L21/76897 ,  H01L21/76819 ,  H01L21/76895 ,  H01L23/485 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing semiconductor device having a structure in which the potential of a gate interconnection is not affected by that of a bit line when a dummy pad contact is formed at an end portion of a memory cell, in which no steps are formed in the vicinity of a memory cell end are obtained. The semiconductor device includes dummy pad contacts arranged in a dotted line, which are smaller than a first pad contact in the memory cell body and are opened using a self-alignment method, and a conduction is cut-off in a path leading from the dummy pad contact to the bit line.

摘要翻译： 一种制造半导体器件的方法，其具有这样的结构，其中当在存储单元的端部形成虚拟焊盘接触时，栅极互连的电位不受位线的影响，在存储单元的端部没有形成步骤 获得存储单元端的附近。 半导体器件包括以虚线布置的虚拟焊盘触点，其小于存储单元主体中的第一焊盘触点，并且使用自对准方法打开，并且在从虚拟器引出的路径中导通被切断 焊盘接触到位线。

公开(公告)号：US4460705A

公开(公告)日：1984-07-17

申请号：US450649

申请日：1982-12-17

申请人： Takashi Terauchi ,  Koji Sato ,  Shoichi Hoshi

发明人： Takashi Terauchi ,  Koji Sato ,  Shoichi Hoshi

IPC分类号： B01J23/08 ,  B01J23/10 ,  B01J23/16 ,  B01J23/20 ,  C07B61/00 ,  C07C1/00 ,  C07C2/84 ,  C07C15/18 ,  C07C15/52 ,  C07C67/00 ,  B01J23/02 ,  B01J23/04

CPC分类号： C07C2/84 ,  B01J23/08 ,  B01J23/10 ,  B01J23/16 ,  C07C2523/08

摘要： Disclosed is a catalyst for the oxidative dimerization of toluene, comprising a composition represented by the general formula:Tl.sub.1 M.sub.a M'.sub.b O.sub.cwhereinM represents at least one element selected from the group consisting of beryllium, magnesium, calcium, strontium and barium; M' represents at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, titanium, zirconium, hafnium, niobium, tantalum, zinc, aluminum, gallium, indium and antimony;a is 0.05 to 15;b is 0.05 to 15;c is a number determined by the valences of thallium, M and M';with the proviso that the number of alkali metal atoms is at most 20% of the number of total atoms constituting the catalyst except for oxygen when alkali metal is included in M', and a process for producing 1,2-diphenylethane and 1,2-diphenylethylene by the oxidative dimerization of toluene in the presence of a catalyst comprising a composition represented by the above-mentioned general formula.

摘要翻译： 公开了一种用于甲苯的氧化二聚的催化剂，其包含由以下通式表示的组合物：T11MaM'bOc其中M表示选自铍，镁，钙，锶和钡中的至少一种元素; M'表示选自锂，钠，钾，铷，铯，钪，钇，镧，铈，镨，钕，钐，铕，钆，铽，镝，钬，铒，ium中的至少一种元素 镱，镥，钛，锆，铪，铌，钽，锌，铝，镓，铟和锑; a为0.05〜15; b为0.05〜15; c是由铊，M和M'的化合价决定的数字; 条件是当碱金属包括在M'中时，碱金属原子的数量除了构成除了氧之外的氧的总原子数的至多20％，并且1,2-二苯基乙烷和1,2- 在包含由上述通式表示的组合物的催化剂的存在下，通过甲苯的氧化二聚反应生成二苯基乙烯。