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公开(公告)号：US06524406B2
公开(公告)日：2003-02-25
申请号：US09779488
申请日：2001-02-09
申请人： Takehiko Kikuchi , Setsuo Kajiwara , Daozhi Liu , Kazuyuki Ogawa , Norio Shinya
发明人： Takehiko Kikuchi , Setsuo Kajiwara , Daozhi Liu , Kazuyuki Ogawa , Norio Shinya
IPC分类号： C22C2906
CPC分类号： C22C38/58 , C21D6/005 , C21D2201/01 , C22C38/26 , C22C38/34 , C22C38/38 , C22C38/48 , C22F1/006
摘要： A novel shape memory alloy of Fe—Mn—Si system containing at least Fe, Mn, and Si wherein the alloy contains niobium carbide in the structure and is improved in that a sufficiently satisfactory shape memory effect is provided without carrying out a special treatment termed training.
摘要翻译： 至少含有Fe，Mn和Si的Fe-Mn-Si体系的新型形状记忆合金，其中该合金在该结构中含有碳化铌，并且具有改进，因为提供了足够令人满意的形状记忆效应，而不进行称为 训练。
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2.发明申请Method of thermo-mechanical-treatment for fe-mn-si shape-memory alloy doped with nbc 审中-公开掺有nbc的Fe-mn-si形状记忆合金的热机械处理方法公开(公告)号：US20050236077A1
公开(公告)日：2005-10-27
申请号：US10519255
申请日：2003-12-17
摘要： The present invention provides a thermomechanical treatment means for a Fe—Mn—Si-based shape memory alloy having specified components with Nb, C addition with simple deformation prior to aging. Such deformation treatment prior to aging is carried out in the inventions of the prior applications in a temperature range of from 500° C. to 800° C. According to the present invention, however, the deformation treatment prior to the aging treatment can be successfully carried out not at high temperature but at room temperature, if the deformation ratio is in a specified range. The technical meaning of the present invention must be clearly understood as compared to the prior art and the inventions of the prior applications because the present invention allows the treatment at room temperature while the others require troublesome treatment at high temperature so that there is significant difference therebetween. That is, according to the present invention, the remarkable improvement in shape memory property is achieved first time by a combination of specified alloy components, specified deformation ratio at room temperature, and setting of aging condition to a certain range. With the development of the present invention, it is expected that the use of shape memory alloys will be accelerated toward the practical use in a wide variety of fields.
摘要翻译： 本发明提供一种用于Fe-Mn-Si基形状记忆合金的热机械处理装置，其具有在老化之前具有简单变形的Nb，C添加的具有特定成分的组分。 老化前的这种变形处理在现有应用的发明中在500℃至800℃的温度范围内进行。然而，根据本发明，老化处理之前的变形处理可以成功 如果变形率在规定的范围内，则不在高温下进行，而是在室温下进行。 与现有技术和现有技术的发明相比，本发明的技术意义必须清楚地理解，因为本发明允许在室温下进行处理，而其它的则需要在高温下进行麻烦的处理，因此它们之间存在显着差异 。 也就是说，根据本发明，通过规定的合金成分，室温下的规定变形率和老化条件的设定到一定范围的组合，首先实现形状记忆性的显着改善。 随着本发明的发展，预期形状记忆合金的使用将被加速到各种领域中的实际应用。
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3.发明授权Method of processing and heat-treating NbC-added Fe-Mn-Si-based shape memory alloy 失效添加NbC的Fe-Mn-Si基形状记忆合金的加工和热处理方法公开(公告)号：US06855216B2
公开(公告)日：2005-02-15
申请号：US10391659
申请日：2003-03-20
IPC分类号： C21D8/00 , C22C38/00 , C22C38/02 , C22C38/04 , C22C38/12 , C22C38/34 , C22C38/48 , C22C38/58 , C22F1/00
摘要： A NbC-added Fe—Mn—Si-based shape memory alloy is provided, showing a shape memory property even if a special treatment such as training is not performed.A Fe—Mn—Si-based shape memory alloy containing Nb and C is rolled by 10 to 30% in a temperature range of 500 to 800° C. under austenite condition, then, subjected to an aging treatment by heating in a temperature range of 400 to 1000° C. for 1 minute to 2 hours.
摘要翻译： 提供了一种NbC添加的Fe-Mn-Si基形状记忆合金，即使不进行训练等特殊处理，也显示出形状记忆特性.1。一种含有Nb，C的Fe-Mn-Si系形状记忆合金 在奥氏体条件下在500〜800℃的温度范围内轧制10〜30％，然后在400〜1000℃的温度范围内加热1〜2小时进行时效处理。
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公开(公告)号：US06548412B2
公开(公告)日：2003-04-15
申请号：US10098316
申请日：2002-03-18
申请人： Hiroshi Fudoji , Mikihiko Kobayashi , Norio Shinya
发明人： Hiroshi Fudoji , Mikihiko Kobayashi , Norio Shinya
IPC分类号： H01L21311
摘要： A novel patterned thin film forming method is capable of realizing formation of nanometer-scale patterned thin films with high controllability by an easy and low-cost process. To form a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, an electric charge pattern is formed on the insulating substrate, and then the insulating substrate is dipped in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on the insulating substrate.
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公开(公告)号：US20060231755A1
公开(公告)日：2006-10-19
申请号：US11349985
申请日：2006-02-09
IPC分类号： G21K7/00
CPC分类号： H01L24/95 , H01L21/4853 , H01L25/50 , H01L2224/95145 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H05K3/3478 , H01L2924/00
摘要： A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate. Charged spots are formed by a converging ion beam or the like on a substrate having an insulating property or the like, and micro-bodies having a size of 200 microns or less are attracted and stuck to the charged spots.
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公开(公告)号：US20050056793A1
公开(公告)日：2005-03-17
申请号：US10793896
申请日：2004-03-08
IPC分类号： H05K3/34 , B01J19/08 , G01N37/00 , G02F1/1339 , H01L21/48 , H01L21/98 , H01L23/12 , A61N5/00 , G21G5/00
CPC分类号： H01L24/95 , H01L21/4853 , H01L25/50 , H01L2224/95145 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H05K3/3478 , H01L2924/00
摘要： A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate. Charged spots are formed by a converging ion beam or the like on a substrate having an insulating property or the like, and micro-bodies having a size of 200 microns or less are attracted and stuck to the charged spots.
摘要翻译： 一种用于在基板上一个一个地高效且精确地布置多个微体的方法。 带电点由具有绝缘性等的基板上的会聚离子束等形成，并且具有200微米或更小尺寸的微体被吸引并粘附到带电点。
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公开(公告)号：US07323227B2
公开(公告)日：2008-01-29
申请号：US11349985
申请日：2006-02-09
IPC分类号： B05D1/04
CPC分类号： H01L24/95 , H01L21/4853 , H01L25/50 , H01L2224/95145 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12042 , H05K3/3478 , H01L2924/00
摘要： A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate.Charged spots are formed by a converging ion beam or the like on a substrate having an insulating property or the like, and micro-bodies having a size of 200 microns or less are attracted and stuck to the charged spots.
摘要翻译： 一种用于在基板上一个一个地高效且精确地布置多个微体的方法。 带电点由具有绝缘性等的基板上的会聚离子束等形成，并且具有200微米或更小尺寸的微体被吸引并粘附到带电点。
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8.发明申请GRAPHENE SHEET FILM CONNECTED WITH CARBON NANOTUBES, METHOD FOR PRODUCING SAME, AND GRAPHENE SHEET CAPACITOR USING SAME 审中-公开与碳纳米管连接的石墨片薄膜，用于制造其的方法和使用其的石墨片电容器公开(公告)号：US20130295374A1
公开(公告)日：2013-11-07
申请号：US13990930
申请日：2011-11-30
申请人： Jie Tang , Qian Cheng , Norio Shinya , Han Zhang , Luchang Qin
发明人： Jie Tang , Qian Cheng , Norio Shinya , Han Zhang , Luchang Qin
CPC分类号： H01G9/058 , B81B2201/0221 , B81C1/00158 , B82B1/002 , B82B3/0047 , B82Y30/00 , B82Y40/00 , C01B32/05 , C01B32/184 , C01B2204/04 , H01G11/32 , H01G11/36 , Y02E60/13 , Y02T10/7022 , Y10S977/742 , Y10S977/842 , Y10S977/948 , Y10T428/25 , Y10T428/30
摘要： A graphene sheet film as a film-like assembly of two or more graphene sheets 11 to 25 is provided. The graphene sheet film uses a graphene sheet assembly 101 that includes: first carbon nanotubes 31 to 48 that join the graphene sheets 11 to 25 to each other and form graphene sheet laminates 61 to 65 in which the graphene sheets 11 to 25 are laminated with the sheet planes being paralleled to each other; and second carbon nanotubes 51 to 56 that connect the graphene sheet laminates 61 to 65 to each other. This makes it possible to provide a graphene sheet film having high capacitor performance with respect to energy density and output density, a method for producing the same, and a graphene sheet capacitor using such graphene sheet films.
摘要翻译： 提供了作为两个或更多个石墨烯片11至25的膜状组件的石墨烯片薄膜。 石墨烯片薄膜使用石墨烯片组件101，其包括：将石墨烯片11〜25彼此接合并形成石墨烯片11〜25的石墨烯片层压体61〜65的第一碳纳米管31〜48与石墨烯片11〜 平面彼此平行; 以及将石墨烯片层叠体61〜65彼此连接的第二碳纳米管51〜56。 这使得可以提供相对于能量密度和输出密度具有高电容器性能的石墨烯薄膜，其制造方法和使用这种石墨烯薄膜的石墨烯薄片电容器。
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